Solid state image sensing device

Claim 1

A solid state imaging sensing device comprising: an n-type semiconductor substrate; a photoelectric transducing diode having a p-type anode formed on said n-type semiconductor substrate and an n-type cathode formed on said p-type anode; a metal oxide semiconductor type of switching transistor formed on said substrate and separated from said diode, said transistor having source and drain regions separated from each other to form a channel therebetween and a gate region overlying and insulated from said channel, for selectively providing a signal current generated in said photoelectric transducing diode upon incidence thereto of a light; a pnp-type transistor formed on said n-type semiconductor substrate and between said photoelectric transducing diode and said metal oxide semiconductor switching transistor for amplifying said signal current; said source region of said metal oxide semiconductor switching transistor being connected to the emitter of said pnp type transistor through a path that includes a material having an insulating surface, and a conductor connected to the drain of said metal oxide semiconductor switching transistor, said conductor being disposed on said material.