US5101247A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Germanium silicon dioxide gate MOSFET
Assignee: INTELLECTUAL PROPERTY VENTURES LLC
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Filing: 1990-04-27
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Granted: 1992-03-31
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Expires: 2010-04-27
Abstract
Abstract The invention is a method of depositing a layer of polycrystalline silicon on a silicon dioxide substrate until the layer of polycrystalline silicon is thick enough to support the deposition of germanium thereon, but while thin enough to substantially avoid the deleterious effects on the characteristics of semiconductor device structure that the deposition of polycrystalline silicon would otherwise potentially cause. The polycrystalline layer is then exposed to a germanium containing gas at a temperature below the temperature at which germanium will deposit on silicon dioxide alone while preventing native growth of silicon dioxide on the polycrystalline silicon layer, and for a time sufficient for a desired thickness of polycrystalline germanium to be deposited on the layer of polycrystalline silicon.
Inventors
- 👤 Mehmet Ozturk
- 👤 Jimmie Wortman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:07
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01314
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
137 words
A metal-oxide-semiconductor field effect transistor (MOSFET) that can be produced at relatively high throughput and with a minimal thermal budget and using self-alignment techniques; said transistor comprising: a silicon substrate having a first conductivity type; a silicon dioxide gate oxide portion on the surface of said silicon substrate, said gate oxide portion defining a gate in said silicon substrate; a doped source and a doped drain in said substrate and respectively adjacent said gate oxide portion and having the opposite conductivity type from said silicon substrate and forming respective p-n junctions with said gate; a thin film layer of polycrystalline silicon on said gate oxide portion and that is thick enough to support deposition of germanium thereon; and a germanium gate contact formed of a germanium thin film deposited upon said thin film layer of polycrystalline silicon.
Claim 2
Dependent Claim
137 words
A metal-oxide-semiconductor field effect transistor (MOSFET) that can be produced at relatively high throughput and with a minimal thermal budget and using self-alignment techniques; said transistor comprising: a silicon substrate having a first conductivity type; a silicon dioxide gate oxide portion on the surface of said silicon substrate, said gate oxide portion defining a gate in said silicon substrate; a doped source and a doped drain in said substrate and respectively adjacent said gate oxide portion and having the opposite conductivity type from said silicon substrate and forming respective p-n junctions with said gate; a thin film layer of polycrystalline silicon on said gate oxide portion and that is thick enough to support deposition of germanium thereon; and a germanium gate contact formed of a germanium thin film deposited upon said thin film layer of polycrystalline silicon.
Claim 3
Dependent Claim
22 words
A transistor according to claim 1 wherein said thin film layer of polycrystalline silicon is no more than about 10 nanometers thick.
Claim 4
Dependent Claim
22 words
A transistor according to claim 1 wherein said thin film layer of polycrystalline silicon is no more than about 5 nanometers thick.
Claim 5
Dependent Claim
36 words
A transistor according to claim 1 wherein said silicon substrate comprises a wafer and further comprising portions of locally-oxidized silicon on said wafer adjacent said transistor for isolating said transistor from other devices on said wafer.
Claim 6
Dependent Claim
58 words
A transistor according to claim 4 and further comprising an insulating passivating layer upon said source, said drain and said gate, and with said insulating layer having openings therein adjacent said source, said drain, and said gate, with metal contacts to said source, said drain, and in said germanium gate contact in said openings in said insulating layer.
Claim 7
Dependent Claim
40 words
A transistor according to claim 1 wherein said source and said drain are immediately adjacent said gate oxide and said gate oxide substantially defines said p-n junctions between said source and said gate and between said gate and said drain.
Claim 8
Dependent Claim
70 words
A gate structure for a metal-oxide-semiconductor field effect transistor comprising: a gate oxide portion on a semiconductor substrate for defining a gate in said semiconductor substrate; a thin film layer of polycrystalline silicon on said gate oxide portion and that is thick enough to support the deposition of germanium thereon; and a germanium gate contact formed of a germanium thin film deposited upon said thin film layer of polycrystalline silicon.
Claim 9
Dependent Claim
70 words
A gate structure for a metal-oxide-semiconductor field effect transistor comprising: a gate oxide portion on a semiconductor substrate for defining a gate in said semiconductor substrate; a thin film layer of polycrystalline silicon on said gate oxide portion and that is thick enough to support the deposition of germanium thereon; and a germanium gate contact formed of a germanium thin film deposited upon said thin film layer of polycrystalline silicon.
Claim 10
Dependent Claim
15 words
A gate structure according to claim 7 wherein said germanium thin film comprises polycrystalline germanium.
Claim 11
Dependent Claim
23 words
A gate structure according to claim 7 wherein said thin film layer of polycrystalline silicon is no more than about 10 nanometers thick.
Claim 12
Dependent Claim
23 words
A gate structure according to claim 7 wherein said thin film layer of polycrystalline silicon is no more than about 5 nanometers thick.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-31 | 1995-09-30 | 1996-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-31 | 1999-09-30 | 2000-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-31 | 2003-09-30 | 2004-03-31 | $7700.00 | Window Closed / Lapsed |