Semiconductor device having reverse conductivity-type diffusion layer and semiconductor wiring layer connected by metallic connection wiring layer

Claim 2

A semiconductor device comprising a first conductivity type semiconductor substrate, a reverse conductivity type diffusion layer, an insulating film, a semiconductor wiring layer and a metal connection wiring layer, said diffusion layer being selectively formed in said semiconductor substrate and having a contact portion on a part of the surface thereof, said semiconductor wiring layer being formed on a surface of said semiconductor substrate above said insulating film and having a connection portion adjacent to said contact portion of the diffusion layer on an upper surface of the semiconductor wiring layer, said metal connection wiring layer comprising a high melting point metal formed on the surface of said contact portion above the contact portion and above the upper surface of said connection portion of said semiconductor wiring layer and in electrical contact with said contact portion and said connection portion.

Claim 3

A semiconductor device as claimed in claim 1, wherein said high melting point metal is a metal having a melting point much higher than that of aluminum.

Claim 4

A semiconductor device as claimed in claim 1, wherein said high melting point metal comprises tungsten.

Claim 5

A semiconductor device as claimed in claim 1, wherein the conductivity type of said diffusion layer is P-type and that of said semiconductor wiring layer is N-type.

Claim 6

A semiconductor device comprising an N-type silicon substrate, a P-type diffusion layer, a silicon oxide film, an N-type polycrystalline silicon wiring layer and a metal connection wiring layer, said diffusion layer being selectively formed in an upper layer of said silicon substrate and having a contact portion on a part of a surface thereof, said polycrystalline silicon wiring layer being formed on a surface of said silicon substrate above said silicon oxide film and having a connection portion adjacent to said contact portion of said diffusion layer on an upper surface of the polycrystalline silicon wiring layer, said metal connection wiring layer comprising tungsten formed on the surface on said contact portion above the contact portion and above the upper surface of said connection portion and in electrical contact with said contact portion and said connection portion.

Claim 7

A semiconductor device comprising an N-type silicon substrate, a P-type diffusion layer, a silicon oxide film, an N-type polycrystalline silicon wiring layer and a metal connection wiring layer, said diffusion layer being selectively formed in an upper layer of said silicon substrate and having a contact portion on a part of a surface thereof, said polycrystalline silicon wiring layer being formed on a surface of said silicon substrate above said silicon oxide film and having a connection portion adjacent to said contact portion of said diffusion layer on an upper surface of the polycrystalline silicon wiring layer, said metal connection wiring layer comprising tungsten formed on the surface on said contact portion above the contact portion and above the upper surface of said connection portion and in electrical contact with said contact portion and said connection portion.

Claim 8

A semiconductor device as claimed in claim 1, wherein the conductivity type of said diffusion layer is N-type and that of said semiconductor wiring layer is P-type.

Claim 9

A semiconductor device as claimed in claim 1, wherein the conductivity type of said diffusion layer and said semiconductor wiring layer is the same.

Claim 10

A semiconductor device comprising a first conductivity type semiconductor substrate, a reverse conductivity type diffusion layer selectively formed in an upper layer of said semiconductor substrate and having a contact portion on a part of a surface thereof, an insulating film above the substrate and the diffusion layer, said contact portion not being covered by said insulating film, said insulating film having a contact hole corresponding to said contact portion of said diffusion layer, a semiconductor wiring layer being of an electric conductivity type identical with said semiconductor substrate, and formed on said semiconductor substrate through said insulating film with an end portion of the semiconductor wiring layer substantially coinciding with an edge of the contact hole of said insulating film and having a connection portion adjacent to said contact portion, a further insulating film above said wiring layer, said connection portion of said semiconductor wiring layer not being covered by the further insulating film, and a metal connection wiring layer comprising a high melting point metal formed on said contact portion and said connection portion, and connection said contact portion to said connection portion.

Claim 11

A semiconductor device comprising a first conductivity type semiconductor substrate, a reverse conductivity type diffusion layer selectively formed in an upper layer of said semiconductor substrate and having a contact portion on a part of a surface thereof, an insulating film above the substrate and the diffusion layer, said contact portion not being covered by said insulating film, said insulating film having a contact hole corresponding to said contact portion of said diffusion layer, a semiconductor wiring layer being of an electric conductivity type identical with said semiconductor substrate, and formed on said semiconductor substrate through said insulating film with an end portion of the semiconductor wiring layer substantially coinciding with an edge of the contact hole of said insulating film and having a connection portion adjacent to said contact portion, a further insulating film above said wiring layer, said connection portion of said semiconductor wiring layer not being covered by the further insulating film, and a metal connection wiring layer comprising a high melting point metal formed on said contact portion and said connection portion, and connection said contact portion to said connection portion.

Claim 12

A semiconductor device as claimed in claim 8, wherein said high melting point metal comprises a metal having a melting point much higher than that of aluminum.

Claim 13

A semiconductor device as claimed in claim 8, wherein said high melting point metal comprises tungsten.

Claim 14

A semiconductor device as claimed in claim 8, wherein the conductivity type of said diffusion layer is P-type and that of said semiconductor wiring layer is N-type.

Claim 15

A semiconductor device as claimed in claim 8, wherein the conductivity type of said diffusion layer is N-type and that of said semiconductor wiring layer is P-type.

Claim 16

A semiconductor device comprising an N-type semiconductor substrate, a P-type diffusion layer selectively formed in an upper layer of said N-type semiconductor substrate and having a contact portion on a part of a surface thereof, a silicon oxide insulating film above the substrate and the diffusion layer, said contact portion not being covered by the silicon oxide insulating film, said silicon oxide insulating film having a contact hole corresponding to said contact portion of said P-type diffusion layer, an N-type semiconductor wiring layer formed on said N-type semiconductor substrate through said silicon oxide insulating film with an end portion of said N-type semiconductor wiring layer substantially coinciding with an edge of said contact hole of said silicon oxide insulating film and having a connection portion adjacent to said contact portion, a further silicon oxide insulating film above said semiconductor wiring layer, said connection portion of said semiconductor wiring layer not being covered by the further silicon oxide insulating film, and a connection wiring layer comprising tungsten formed on said contact portion and said connection portion, and connecting said contact portion to said connection portion.

Claim 17

A semiconductor device comprising an N-type semiconductor substrate, a P-type diffusion layer selectively formed in an upper layer of said N-type semiconductor substrate and having a contact portion on a part of a surface thereof, a silicon oxide insulating film above the substrate and the diffusion layer, said contact portion not being covered by the silicon oxide insulating film, said silicon oxide insulating film having a contact hole corresponding to said contact portion of said P-type diffusion layer, an N-type semiconductor wiring layer formed on said N-type semiconductor substrate through said silicon oxide insulating film with an end portion of said N-type semiconductor wiring layer substantially coinciding with an edge of said contact hole of said silicon oxide insulating film and having a connection portion adjacent to said contact portion, a further silicon oxide insulating film above said semiconductor wiring layer, said connection portion of said semiconductor wiring layer not being covered by the further silicon oxide insulating film, and a connection wiring layer comprising tungsten formed on said contact portion and said connection portion, and connecting said contact portion to said connection portion.