US4954871A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with composite electrode
Assignee: Toshiba Corp
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Filing: 1988-01-21
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Granted: 1990-09-04
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Expires: 2008-01-21
Abstract
Abstract Provided is a semiconductor device having a single continuous wiring layer in which a predetermined portion thereof is made of a semiconductor material, and the remaining portion thereof is made of a metal compound of the semiconductor material. The predetermined portion of the wiring layer preferably constitutes the gate electrode of a field effect transistor.
Inventors
- 👤 Yoshihisa Mizutani
- 👤 Minoru Kimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:59
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D30/00; H10D30/60; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/858; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10W20/40; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
97 words
A semiconductor device comprising: a field effect transistor having a source, a drain, and a channel region of a first semiconductor material; and a single continuous wiring layer extending in a wiring layer plane, said wiring layer comprising an electrode portion made of a second semiconductor material coupled to said channel region to form a gate electrode, and an interconnection portion made of a metal compound of said second semiconductor material adapted for connection to associated circuitry, said wiring layer having, at all positions, a substantially homogeneous composition in a direction perpendicular to said wiring layer plane.
Claim 2
Dependent Claim
97 words
A semiconductor device comprising: a field effect transistor having a source, a drain, and a channel region of a first semiconductor material; and a single continuous wiring layer extending in a wiring layer plane, said wiring layer comprising an electrode portion made of a second semiconductor material coupled to said channel region to form a gate electrode, and an interconnection portion made of a metal compound of said second semiconductor material adapted for connection to associated circuitry, said wiring layer having, at all positions, a substantially homogeneous composition in a direction perpendicular to said wiring layer plane.
Claim 3
Dependent Claim
102 words
A semiconductor device comprising a plurality of field effect transistors, each having a source, a drain, and a channel region of semiconductor material; and a single continuous wiring layer extending in a wiring layer plane, said wiring layer comprising an electrode portion made of a semiconductor material coupled to at least one of said channel regions to form at least one gate electrode, and an interconnection portion made of a metal compound of the semiconductor material adapted for connection to associated circuitry, said wiring layer having, at all positions, a substantially homogeneous composition in a direction perpendicular to said wiring layer plane.
Claim 4
Dependent Claim
102 words
A semiconductor device comprising a plurality of field effect transistors, each having a source, a drain, and a channel region of semiconductor material; and a single continuous wiring layer extending in a wiring layer plane, said wiring layer comprising an electrode portion made of a semiconductor material coupled to at least one of said channel regions to form at least one gate electrode, and an interconnection portion made of a metal compound of the semiconductor material adapted for connection to associated circuitry, said wiring layer having, at all positions, a substantially homogeneous composition in a direction perpendicular to said wiring layer plane.
Claim 5
Dependent Claim
93 words
A semiconductor device comprising a source, a drain, and a channel region of a first semiconductor material; and a single continuous wiring layer extending in a wiring layer plane, said wiring layer comprising an electrode portion made of a second semiconductor material directly coupled to at least one of said source and drain, and an interconnection portion made of a metal compound of said second semiconductor material adapted for connection to associated circuitry, said wiring layer having, at all positions, a substantially homogeneous composition in a direction perpendicular to said wiring layer plane.
Claim 6
Dependent Claim
93 words
A semiconductor device comprising a source, a drain, and a channel region of a first semiconductor material; and a single continuous wiring layer extending in a wiring layer plane, said wiring layer comprising an electrode portion made of a second semiconductor material directly coupled to at least one of said source and drain, and an interconnection portion made of a metal compound of said second semiconductor material adapted for connection to associated circuitry, said wiring layer having, at all positions, a substantially homogeneous composition in a direction perpendicular to said wiring layer plane.
Claim 7
Dependent Claim
24 words
A semiconductor device according to claim 3, wherein said electrode portion forms an ohmic contact with at least one of said source and drain.
Claim 8
Dependent Claim
19 words
A semiconductor device as recited in claim 1, wherein said plurality of field effect transistors comprises complementary MOS transistors.
Claim 9
Dependent Claim
21 words
A semiconductor device according to claims 1, 2, or 3, wherein said semiconductor material of said electrode portion is polycrystalline silicon.
Claim 10
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein a metal of said metal compound is one member selected from the group consisting of molybdenum, tungsten, platinum and tantalum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-09-03 | 1994-03-05 | 1994-09-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-09-03 | 1998-03-05 | 1998-09-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-09-03 | 2002-03-05 | 2002-09-04 | $7700.00 | Window Closed / Lapsed |