US3736478A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radio frequency transistor employing high and low-conductivity base grids
Assignee: RCA Corp
•
Filing: 1971-09-01
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Granted: 1973-05-29
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Expires: 1991-09-01
Abstract
Abstract An RF transistor has base and collector regions and a plurality of discrete emitter segments extending into the base region. A highly conductive intermetallic, such as PtSi grid extends into the base region and individually surrounds each emitter segment. The highly conductive intermetallic, such as PtSi grid is separated from the collector region by a highly resistive grid of the same conductivity type as the base region.
Inventors
- 👤 H Veloric
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:34
CPC Classifications
H; H10; H10D; H10D99/00; H10D10/00; Y; Y10; Y10S; Y10S148/00; Y10S148/085; Y10S148/145
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
20 words
A device according to claim 1, wherein said highly resistive region is in contact with said first and intermetallic regions.
Claim 2
Dependent Claim
92 words
A semiconductor device, comprising: a semiconductor body having a surface; a first region of a first conductivity type in said body; a second region of a second conductivity type in said body adjacent said first region and extending to said surface; a third region extending into said second region from said surface, said third region comprising an intermetallic alloy of said semiconductor body; a fourth region of said second conductivity type sandwiched between and totally separating said first and third regions, said fourth region being highly resistive relative to said second region.
Claim 3
Dependent Claim
36 words
A semiconductor device according to claim 3, further comprising: a fifth region of said first conductivity type extending into said second region from said surface; and said third region being spaced apart from said fifth region.
Claim 4
Dependent Claim
15 words
A semiconductor device according to claim 4, wherein said third region surrounds said fifth region.
Claim 5
Dependent Claim
119 words
In a transistor of the type formed in a semiconductor body having a surface, with a first conductivity type collector region in said body and a second conductivity type base region in said body and adjacent said collector region and extending to said surface, and with a plurality of discrete, first conductivity type emitter segments extEnding into said base region from said surface, said transistor also having a highly conductive, intermetallic grid extending into said base region and surrounding each said emitter segment, the improvement comprising: a highly resistive, second conductivity type grid sandwiched between and totally separating said intermetallic grid and said collector region; and a stepped, high-low junction between said highly conductive and said highly resistive grids.
References Cited (Backward Citations)
US3500143A
Cited
US3567506A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-05-28 | 1976-11-27 | 1977-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-05-28 | 1980-11-27 | 1981-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-05-28 | 1984-11-27 | 1985-05-29 | $7700.00 | Window Closed / Lapsed |