Patent US2919999A successfully refreshed from Google Patents.
US3567506A
Expired / Lapsed
US
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Method for providing a planar transistor with heat-dissipating top base and emitter contacts
Assignee: Raytheon Co
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Filing: 1968-03-22
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Granted: 1971-03-02
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Expires: 1988-03-22
Abstract
Abstract A METHOD FOR PROVIDING HEAT-DISSIPATING TOP CONTACTS FOR THE BASE AND EMITTER REGIONS OF A PLANAR TRANSISTOR HAVING A GLASS COATING ON THE SURFACE THEREOF IN WHICH THE HEAT-DISSIPATING MEMBERS ARE FORMED BY PLATING METAL THROUGH OPENINGS IN THE GLASS COATING.
Inventors
- 👤 Richard J Belardi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/482; H10W20/484; H10P; H10P95/00; H10W40/00; H10W40/10; H10W72/00; H10W72/90; H10W74/00; H10W74/40; H10W74/43; H10W74/47
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-03-01 | 1974-08-31 | 1975-03-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-03-01 | 1978-08-31 | 1979-03-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-03-01 | 1982-08-31 | 1983-03-02 | $7700.00 | Window Closed / Lapsed |