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US3567506A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for providing a planar transistor with heat-dissipating top base and emitter contacts

Assignee: Raytheon Co
•
Filing: 1968-03-22
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Granted: 1971-03-02
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Expires: 1988-03-22
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Abstract

Abstract A METHOD FOR PROVIDING HEAT-DISSIPATING TOP CONTACTS FOR THE BASE AND EMITTER REGIONS OF A PLANAR TRANSISTOR HAVING A GLASS COATING ON THE SURFACE THEREOF IN WHICH THE HEAT-DISSIPATING MEMBERS ARE FORMED BY PLATING METAL THROUGH OPENINGS IN THE GLASS COATING.

Inventors

  • 👤 Richard J Belardi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 22:40
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/482; H10W20/484; H10P; H10P95/00; H10W40/00; H10W40/10; H10W72/00; H10W72/90; H10W74/00; H10W74/40; H10W74/43; H10W74/47

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-03-01 1974-08-31 1975-03-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-03-01 1978-08-31 1979-03-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-03-01 1982-08-31 1983-03-02 $7700.00 Window Closed / Lapsed

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