US5097314A
Expired / Lapsed
US
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Dielectrically isolated substrate with isolated high and low breakdown voltage elements
Assignee: Toshiba Corp
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Filing: 1991-07-18
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Granted: 1992-03-17
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Expires: 2011-07-18
Abstract
Abstract A dielectrically isolated substrate comprises a first semiconductor wafer, a second semiconductor wafer bonded on the first semicondcutor wafer with a first insulating layer interposed therebetween, a semiconductor layer formed on the second semiconductor wafer, a first groove formed in the semiconductor layer and the second semiconductor wafer so as to reach the first insulating layer, thereby isolating the semiconductor layer and the second semiconductor wafer, and a second insulating layer formed on the side face of the first groove or embedded in the first groove. In this dielectrically isolated substrate, a high breakdown voltage element and a low breakdown voltage element are formed in a region isolated by the first groove.
Inventors
- 👤 Akio Nakagawa
- 👤 Kazuyoshi Furukawa
- 👤 Tsuneo Ogura
- 👤 Katsujiro Tanzawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 13:46
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/411; H10D12/421; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D86/00; H10D86/201; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/031; H10W10/041; H10W10/061; H10W10/10; H10W10/181; H10W10/30; H10W10/40; H10P90/1914; H10W10/014; H10W10/17
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
119 words
A semiconductor device, comprising: a composite substrate formed by directly bonding a first semiconductor substrate serving as an element region to a second semiconductor substrate serving as a supporting member with a first insulating film interposed therebetween; a plurality of low breakdown voltage elements formed in said first semiconductor substrate; and a high breakdown voltage element formed in said first semiconductor substrate; said first semiconductor substrate being divided into first and second island regions which are isolated from each other by a dielectric material, said second island region including a plurality of element regions, said high breakdown voltage element being formed in said first island region, and said low breakdown voltage elements being formed in said second island region.
Claim 2
Dependent Claim
119 words
A semiconductor device, comprising: a composite substrate formed by directly bonding a first semiconductor substrate serving as an element region to a second semiconductor substrate serving as a supporting member with a first insulating film interposed therebetween; a plurality of low breakdown voltage elements formed in said first semiconductor substrate; and a high breakdown voltage element formed in said first semiconductor substrate; said first semiconductor substrate being divided into first and second island regions which are isolated from each other by a dielectric material, said second island region including a plurality of element regions, said high breakdown voltage element being formed in said first island region, and said low breakdown voltage elements being formed in said second island region.
Claim 3
Dependent Claim
64 words
The semiconductor device according to claim 1, wherein said second island region includes a first element region of a first conductivity type having a first low breakdown voltage element formed therein, and a second element region of a second conductivity type having a second low breakdown voltage element formed therein, and said first and second element regions are surrounded by a second conductivity region.
Claim 4
Dependent Claim
20 words
The semiconductor device according to claim 2, wherein said first and second low breakdown elements comprise a complementary MOS circuit.
Claim 5
Dependent Claim
37 words
The semiconductor device according to claim 2, wherein said second island region further includes a third element region of a first conductivity type, and a third low breakdown voltage element is formed in said third element region.
Claim 6
Dependent Claim
52 words
The semiconductor device according to claim 2, wherein said second island region further includes third and fourth element regions of a first conductivity type, surrounded by second conductivity regions and isolated by a pn junction, and third and fourth low breakdown voltage elements are formed in said third and fourth element regions.
Claim 7
Dependent Claim
19 words
The semiconductor device according to claim 5, wherein said third and fourth low breakdown voltage elements are bipolar transistors.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-17 | 1995-09-16 | 1996-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-17 | 1999-09-16 | 2000-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-17 | 2003-09-16 | 2004-03-17 | $7700.00 | Window Closed / Lapsed |