EP0217288A2
Expired / Lapsed
EP
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Substrate structure for a composite semiconductor device
Assignee: Toshiba Corp
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Filing: 1986-09-25
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Granted: —
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Expires: 2006-09-25
Abstract
Abstract A substrate structure for a composite semiconductor device comprises first and second semiconductor substrates (11, 12) whose major surfaces are bonded to each other with an insulating layer (13) interposed therebetween. In this substrate structure, an epitaxial layer (16) is grown from part of the second semiconductor substrate (12), forming one element area, and another element area (19) is formed in the first semiconductor substrate (11) area and isolated from the epitaxial layer (16).
Inventors
- 👤 Koichi C/O Patent Division Kitahara
- 👤 Yu C/O Patent Division Ohata
- 👤 Tsuyoshi C/O Patent Division Kuramoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 18:46
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/018; H10W10/061; H10W10/10; H10W10/181; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10P90/1912; H10P90/1914; H10W10/041; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/135
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
82 words
A substrate structure for a composite semiconductor device which comprises a composite substrate unit comprised of first and second semiconductor substrates (11, 12) whose major surfaces are bonded to each other with an insulating film (13) therebetween; characterized by further comprising: an etched area formed by selectively etching the first semiconductor substrate (11) and insulating film (13) to reach at least the second semiconductor substrate (12); and an epitaxial layer (16) formed on the second semiconductor substrate (12) in that etched area.
Claim 2
Dependent Claim
82 words
A substrate structure for a composite semiconductor device which comprises a composite substrate unit comprised of first and second semiconductor substrates (11, 12) whose major surfaces are bonded to each other with an insulating film (13) therebetween; characterized by further comprising: an etched area formed by selectively etching the first semiconductor substrate (11) and insulating film (13) to reach at least the second semiconductor substrate (12); and an epitaxial layer (16) formed on the second semiconductor substrate (12) in that etched area.
Claim 3
Dependent Claim
79 words
A substrate structure (17) according to claim 1, characterized in that an element isolation area is formed in the first semiconductor substrate (11) in an area not including said epitaxial layer (16) of said composite substrate unit, such that it reaches said insulating film (13) from the surface of said first semiconductor substrate (11), and an element area (19) is formed in said first semiconductor substrate area in a manner to be electrically isolated from said epitaxial area (16).
Claim 4
Dependent Claim
24 words
A substrate structure according to claim 2, characterized in that a plurality of element areas (19) are formed in the first semiconductor substrate (11).
Claim 5
Dependent Claim
27 words
A substrate structure according to claim 1, characterized in that said epitaxial layer (16) has a thickness substantially equal to that of said first semiconductor substrate (11).
Claim 6
Dependent Claim
28 words
A substrate structure according to claim 1, characterized in that the thickness of said epitaxial layer (16) is substantially greater than that of said first semiconductor substrate (11).
Claim 7
Dependent Claim
33 words
A substrate structure according to claim 2, characterized in that said epitaxial layer (16) has an impurity concentration level different from that of said element area (19) of said first semiconductor substrate (11).
Claim 8
Dependent Claim
40 words
A substrate structure according to claim 2, characterized in that a power element is formed in said epitaxial layer (16) and semiconductor elements are formed in said element areas (19) of said first semiconductor substrate to control said power element.
References Cited (Backward Citations)
No citation records indexed.
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