EP0323856A2
Expired / Lapsed
EP
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Substrate structure for composite semiconductor device
Assignee: Toshiba Corp
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Filing: 1989-01-05
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Granted: —
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Expires: 2009-01-05
Abstract
Abstract The main surface of a first semiconductor substrate (11) is bonded to the main surface of a second semiconductor substrate (12) with an insulation film (13) interposed therebetween to form a composite substrate (10). The first semiconductor substrate (11) and insulation film (13) are selectively etched to form an etched portion which reaches at least the second semiconductor substrate (12). An impurity layer with an impurity concentration different from that of the first semiconductor substrate (11) is formed on or in the surface area exposed to the etched portion of the first and second semiconductor substrates. An epitaxial layer having an impurity concentration different from that of the impurity layer is formed in the etched portion. The first semiconductor substrate (11), impurity layer (15) and epitaxial layer (14) are planarized. The first semiconductor substrate (11), impurity layer (15) and epitaxial layer (14) are etched to make a pattern of the impurity layer (15) on the surface of the composite substrate (20) and the composite semiconductor substrate (20) is aligned for formation of elements based on the pattern (21). The, elements are formed in the composite substrate thus aligned.
Inventors
- 👤 Koichi C/O Patent Division Kitahara
- 👤 Yoshinori C/O Patent Division Natsume
- 👤 Yoshinori C/O Patent Division Hosoki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 09:46
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W10/01; H10W10/011; H10W10/061; H10W10/181; H10P90/1914; H10W10/041; H10W10/40
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
142 words
A semiconductor substrate for a composite semiconductor device comprising: a composite substrate (10) formed by bonding the main surface of a first semiconductor substrate (11) and the main surface of a second semiconductor substrate (12) together with an insulation film (13) interposed therebetween; an etched portion (17) formed by selectively etching said insulation film (13) and said first semiconductor substrate (11) of said composite substrate (10) to reach at least said second semiconductor substrate (12); and an epitaxial layer (14) formed on said second semiconductor substrate (12) to fill said etched portion (17); characterized by further comprising an impurity layer (15) formed between said first semiconductor substrate (11) and epitaxial layer (14) to extend to the surface of said composite substrate, said impurity layer (15) having an etching rate different from that of said first semiconductor substrate (11) and epitaxial layer (14).
Claim 2
Dependent Claim
142 words
A semiconductor substrate for a composite semiconductor device comprising: a composite substrate (10) formed by bonding the main surface of a first semiconductor substrate (11) and the main surface of a second semiconductor substrate (12) together with an insulation film (13) interposed therebetween; an etched portion (17) formed by selectively etching said insulation film (13) and said first semiconductor substrate (11) of said composite substrate (10) to reach at least said second semiconductor substrate (12); and an epitaxial layer (14) formed on said second semiconductor substrate (12) to fill said etched portion (17); characterized by further comprising an impurity layer (15) formed between said first semiconductor substrate (11) and epitaxial layer (14) to extend to the surface of said composite substrate, said impurity layer (15) having an etching rate different from that of said first semiconductor substrate (11) and epitaxial layer (14).
Claim 3
Dependent Claim
49 words
A semiconductor substrate for a composite semiconductor device according to claim 1, characterized in that said impurity layer (15) is formed of the surface area of that part of said first semiconductor substrate (11) which is exposed to said etched portion (17) and impurity diffused into said surface area.
Claim 4
Dependent Claim
62 words
A semiconductor substrate for a composite semiconductor device according to claim 2, characterized in that said first semiconductor substrate (11) and said epitaxial layer (14) are of a first conductivity type, said impurity layer (15) is of a second conductivity type, and said first semiconductor substrate (11) is electrically isolated from said epitaxial layer (14) by means of said impurity layer (15).
Claim 5
Dependent Claim
63 words
A semiconductor substrate for a composite semiconductor device according to claim 1, characterized in that said impurity layer (15) is formed of that surface area of said first semiconductor substrate (11) which is exposed to said etched portion (17), that surface area of said second semiconductor substrate (12) which is exposed to said etched portion (17), and impurity diffused into said surface areas.
Claim 6
Dependent Claim
68 words
A semiconductor substrate for a composite semiconductor device according to claim 1, characterized in that said impurity layer (15) is formed of an epitaxial layer which is formed to contain impurity and is formed on that surface of said first semiconductor substrate (11) which is exposed to said etched portion (17) and that surface of said second semiconductor substrate (12) which is exposed to said etched portion (17).
Claim 7
Dependent Claim
38 words
A semiconductor substrate for a composite semiconductor device according to claim 1, characterized in that said impurity layer (15) is formed between said first semiconductor substrate (11) and said epitaxial layer (14) to surround said epitaxial layer (14).
Claim 8
Dependent Claim
50 words
A semiconductor substrate for a composite semiconductor device according to claim 1, characterized in that said impurity layer (15) is formed between said first semiconductor substrate (11) and said epitaxial layer (14) and between said second semiconductor substrate (12) and said epitaxial layer (14) to cover said epitaxial layer (14).
Claim 9
Dependent Claim
49 words
A semiconductor substrate for a composite semiconductor device according to claim 1, characterized in that said composite semiconductor substrate (11) has a pattern of said impurity layer which is formed on the surface of said substrate for the composite semiconductor device based on the different in the etching rates.
Claim 10
Dependent Claim
52 words
A semiconductor substrate for a composite semiconductor device according to claim 8, characterized by further comprising a power element formed in said epitaxial layer (14) by effecting an alignment process based on said pattern (21) and a small-sized semiconductor element formed in said first semiconductor substrate (11) for controlling said power element.
Claim 11
Dependent Claim
79 words
An IGBT according to claim 1, characterized in that said first semiconductor substrate (11) is of N-type, said second semiconductor substrate (12) is of P-type, said epitaxial layer (14) is of N-type, said impurity layer (15) is of N-type and has an impurity concentration higher than that of said first semiconductor substrate (11) and epitaxial layer (14), and said epitaxial layer (14) has an insulated gate and an emitter and said second semiconductor substrate (12) acts as a collector.
Claim 12
Dependent Claim
68 words
A semiconductor substrate structure comprising: semiconductor substrate means (10) which has a semiconductor substrate and in which semiconductor elements are formed; and patterning means (15) for aligning said semiconductor substrate means (10), said patterning means being formed at least in the surface area of said semiconductor substrate means (10), and forming a pattern on the surface of said semiconductor substrate means (10) by etching the semiconductor substrate structure.
Claim 13
Dependent Claim
68 words
A semiconductor substrate structure comprising: semiconductor substrate means (10) which has a semiconductor substrate and in which semiconductor elements are formed; and patterning means (15) for aligning said semiconductor substrate means (10), said patterning means being formed at least in the surface area of said semiconductor substrate means (10), and forming a pattern on the surface of said semiconductor substrate means (10) by etching the semiconductor substrate structure.
Claim 14
Dependent Claim
100 words
A semiconductor substrate structure according to claim 11, characterized in that said semiconductor substrate means includes composite substrate (10) formed by bonding a surface of a first semiconductor substrate (11) and a surface of a second semiconductor substrate (12) to each other with an insulation film (13) disposed therebetween; and said patterning means is formed of impurity layer (15) which is formed in said first semiconductor substrate (11) to extend to a surface of said first semiconductor substrate, said impurity layer (15) having an impurity concentration and consequently an etching rate different from those of said first semiconductor substrate (11).
Claim 15
Independent Claim
185 words
A method for manufacturing a semiconductor substrate comprising the steps of: bonding the main surface of a first semiconductor substrate (11) and the main surface of a second semiconductor substrate (12) together with an insulation film (13) interposed therebetween to form a composite substrate (10); selectively etching said first semiconductor substrate (11) of said composite substrate (10) to form an opening (OP11) which reaches said insulation film (13); etching said insulation film (13) in alignment with said opening (OP11) to form an opening (OP13); forming an impurity layer with an impurity concentration different from that of said first semiconductor substrate on or in the surface area of said composite substrate exposed to said opening; forming an epitaxial layer in said openings by an epitaxial growth method; planarizing said first semiconductor substrate (11), impurity layer (15) and epitaxial layer (14); etching said first semiconductor substrate (11), impurity layer (15) and epitaxial layer (14) to make a pattern of said impurity layer (15) on the surface of said composite substrate (20); and positioning said composite semiconductor substrate (20) for formation of elements based on said pattern (21).
Claim 16
Independent Claim
185 words
A method for manufacturing a semiconductor substrate comprising the steps of: bonding the main surface of a first semiconductor substrate (11) and the main surface of a second semiconductor substrate (12) together with an insulation film (13) interposed therebetween to form a composite substrate (10); selectively etching said first semiconductor substrate (11) of said composite substrate (10) to form an opening (OP11) which reaches said insulation film (13); etching said insulation film (13) in alignment with said opening (OP11) to form an opening (OP13); forming an impurity layer with an impurity concentration different from that of said first semiconductor substrate on or in the surface area of said composite substrate exposed to said opening; forming an epitaxial layer in said openings by an epitaxial growth method; planarizing said first semiconductor substrate (11), impurity layer (15) and epitaxial layer (14); etching said first semiconductor substrate (11), impurity layer (15) and epitaxial layer (14) to make a pattern of said impurity layer (15) on the surface of said composite substrate (20); and positioning said composite semiconductor substrate (20) for formation of elements based on said pattern (21).
Claim 17
Dependent Claim
48 words
A manufacturing method according to claim 13, characterized in that said impurity layer (15) is formed by diffusing impurity into an area exposed to at least said opening (OP11) of said first semiconductor substrate (11) before or after said opening (OP13) is formed in said insulation film (13).
Claim 18
Dependent Claim
35 words
A manufacturing method according to claim 13, characterized in that said impurity layer is formed by an epitaxial growth method on at least surface of said first semiconductor substrate (11) exposed to said opening (OP11).
Claim 19
Dependent Claim
83 words
A manufacturing method for an IGBT according to claim 13, characterized in that said first semiconductor substrate (11) is on N-type, said second semiconductor substrate (12) is of P-type, said epitaxial layer (14) is of N-type, and said impurity layer (15) is of N-type and has an impurity concentration higher than that of said first semiconductor substrate (11) and impurity epitaxial layer (14), and characterized by further comprising a step of forming an insulated gate and an emitter on said epitaxial layer (14).
References Cited (Backward Citations)
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