Method of making a light emitting diode array

Claim 1

A method of fabricating a light emitting diode, comprising the steps of: (a) preparing a semiconductor wafer having a semiconductor layer of a first conductivity type therein: (b) forming a matrix array of semiconductor regions of a second conductivity type in a top surface of said semiconductor layer; (c) forming a first insulating layer on said top surface of said semiconductor layer; (d) selectively removing said first insulating layer to obtain windows on said semiconductor regions; (e) providing first conductive layers in said windows; (f) cutting said wafer into strips each having a linear array of said semiconductor regions; (g) forming a second insulating layer on a side surface of a strip obtained in the step (f), said second insulating layer being connected to said first insulating layer on said strip; and (h) providing a second conductive layer having a first portion located on a bottom surface of said strip, a second portion located on said second insulating layer and a third portion located on a part of said first insulating layer of said strip.

Claim 2

A method of fabricating a light emitting diode, comprising the steps of: (a) preparing a semiconductor wafer having a semiconductor layer of a first conductivity type therein: (b) forming a matrix array of semiconductor regions of a second conductivity type in a top surface of said semiconductor layer; (c) forming a first insulating layer on said top surface of said semiconductor layer; (d) selectively removing said first insulating layer to obtain windows on said semiconductor regions; (e) providing first conductive layers in said windows; (f) cutting said wafer into strips each having a linear array of said semiconductor regions; (g) forming a second insulating layer on a side surface of a strip obtained in the step (f), said second insulating layer being connected to said first insulating layer on said strip; and (h) providing a second conductive layer having a first portion located on a bottom surface of said strip, a second portion located on said second insulating layer and a third portion located on a part of said first insulating layer of said strip.

Claim 3

A method of fabricating a light emitting diode, comprising the steps of: (a) preparing a semiconductor wafer having a semiconductor layer of a first conductivity type therein: (b) forming a matrix array of semiconductor regions of a second conductivity type in a top surface of said semiconductor layer; (c) forming a first insulating layer on said top surface of said semiconductor layer; (d) selectively removing said first insulating layer to obtain windows on said semiconductor regions; (e) cutting said wafer into strips each having a linear array of said semiconductor regions; (f) forming a second insulating layer on a side surface of a strip obtained in the step (e), said second insulating layer being connected to said first insulating layer on said strip; (g) providing a conductive layer on top and bottom surfaces of said strip and on said first and second insulating layers; and (h) selectively removing said conductive layer on said first insulating layer to obtain: a first electrode layer which covers said bottom surface of said strip and said second insulating layer and which partially covers said first insulating layer on said strip; and second electrode layers filling said windows on said strip, respectively.

Claim 4

A method of fabricating a light emitting diode, comprising the steps of: (a) preparing a semiconductor wafer having a semiconductor layer of a first conductivity type therein: (b) forming a matrix array of semiconductor regions of a second conductivity type in a top surface of said semiconductor layer; (c) forming a first insulating layer on said top surface of said semiconductor layer; (d) selectively removing said first insulating layer to obtain windows on said semiconductor regions; (e) cutting said wafer into strips each having a linear array of said semiconductor regions; (f) forming a second insulating layer on a side surface of a strip obtained in the step (e), said second insulating layer being connected to said first insulating layer on said strip; (g) providing a conductive layer on top and bottom surfaces of said strip and on said first and second insulating layers; and (h) selectively removing said conductive layer on said first insulating layer to obtain: a first electrode layer which covers said bottom surface of said strip and said second insulating layer and which partially covers said first insulating layer on said strip; and second electrode layers filling said windows on said strip, respectively.