US4864370A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrical contact for an LED
Assignee: Motorola Solutions Inc
•
Filing: 1987-11-16
•
Granted: 1989-09-05
•
Expires: 2007-11-16
Abstract
Abstract A high efficiency light emitting diode is achieved through the use of a patterned metal contact. The metal contact is insulated from the structure of the light emitting diode to prevent current flow and subsequent light generation underneath the electrical bond pad. This shifts the drive current out to the patterned portion of the bond pad or metal contact.
Inventors
- 👤 Craig A. Gaw
- 👤 Daniel L. Rode
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:20
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/831
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
108 words
A light emitting diode having a high efficiency contact, comprising: a substrate of a first conductivity; a first epitaxial layer of the first conductivity over the substrate; a second epitaxial layer of a second conductivity over the first epitaxial layer; a bond pad positioned on a predetermined area of the second epitaxial layer, the bond pad having a plurality of metal lines extending therefrom for making contact to the light emitting diode; and a dielectric layer positioned underneath the bond pad to prevent current flow directly beneath the bond pad between the bond pad and the second epitaxial layer, thereby reducing light generation directly beneath the bond pad.
Claim 2
Dependent Claim
108 words
A light emitting diode having a high efficiency contact, comprising: a substrate of a first conductivity; a first epitaxial layer of the first conductivity over the substrate; a second epitaxial layer of a second conductivity over the first epitaxial layer; a bond pad positioned on a predetermined area of the second epitaxial layer, the bond pad having a plurality of metal lines extending therefrom for making contact to the light emitting diode; and a dielectric layer positioned underneath the bond pad to prevent current flow directly beneath the bond pad between the bond pad and the second epitaxial layer, thereby reducing light generation directly beneath the bond pad.
Claim 3
Dependent Claim
36 words
The light emitting diode of claim 1 wherein the substrate is GaAs, the first epitaxial layer is P-type AlGaAs, and the second epitaxial layer is N-type AlGaAs, and the light emitting diode is a red LED.
Claim 4
Dependent Claim
18 words
The light emitting diode of claim 1 wherein the dielectric layer is an oxide such as silicon dioxide.
Claim 5
Dependent Claim
58 words
A light emitting diode having an electrically conductive bond pad which has a plurality of conductive lines extending from the bond pad for passing current to the light emitting diode, and an electrically insulating layer placed beneath the bond pad to reduce light generation underneath the bond pad and to shift drive current out to the conductive lines.
Claim 6
Dependent Claim
58 words
A light emitting diode having an electrically conductive bond pad which has a plurality of conductive lines extending from the bond pad for passing current to the light emitting diode, and an electrically insulating layer placed beneath the bond pad to reduce light generation underneath the bond pad and to shift drive current out to the conductive lines.
Claim 7
Dependent Claim
18 words
The light emitting diode of claim 4 wherein the electrically insulating layer extends from beneath the bond pad.
Claim 8
Dependent Claim
12 words
The light emitting diode of claim 4 being an AlGaAs red LED.
Claim 9
Dependent Claim
27 words
The light emitting diode of claim 4 wherein an electrically insulating layer is also placed beneath a central portion of each of the plurality of conductive lines.
Claim 10
Dependent Claim
30 words
The light emitting diode of claim 4 wherein the optical thickness of the electrically insulating layer is one half the wavelength of the light emitted from the light emitting diode.
References Cited (Backward Citations)
DE2012936A1
Cited
US3875473A
Cited
US4001055A
Cited
US4145707A
Cited
JPS5384498A
Cited
US4779281A
Cited
US4731790A
Cited
US4603280A
Cited
US4707716A
Cited
US4761790A
Cited
US4750183A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-04 | 1993-03-06 | 1993-09-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-04 | 1997-03-06 | 1997-09-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-04 | 2001-03-06 | 2001-09-05 | $7700.00 | Window Closed / Lapsed |