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US5093224A
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Process for producing fine patterns using cyclocarbosilane
Assignee: Panasonic Holdings Corp
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Filing: 1990-03-20
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Granted: 1992-03-03
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Expires: 2010-03-20
Abstract
Abstract A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist film consisting of a cyclocarbosilane represented by the general formula (I): ##STR1## where R 1 , R 2 , R 3 and R 4 are each hydrogen or an alkyl group, a polymer resin, and a photo acid generator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask. According to the present invention, a dry etching resistant precise fine resist pattern can be formed with high sensitivity.
Inventors
- 👤 Kazuhiko Hashimoto
- 👤 Kenji Kawakita
- 👤 Noboru Nomura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 10:00
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0754; Y; Y10; Y10S; Y10S430/00; Y10S430/167; Y10S430/168
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
107 words
A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist comprising a cyclocarbosilane represented by the formula (I): ##STR14## where R 1 , R 2 , R 3 , and R 4 are each hydrogen or an alkyl group, a polymer resin and a photo initiator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask, wherein the photo initiator is a photo acid generator.
Claim 2
Dependent Claim
107 words
A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist comprising a cyclocarbosilane represented by the formula (I): ##STR14## where R 1 , R 2 , R 3 , and R 4 are each hydrogen or an alkyl group, a polymer resin and a photo initiator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask, wherein the photo initiator is a photo acid generator.
Claim 3
Dependent Claim
20 words
A process for forming a fine pattern according to claim 1, wherein the photo acid generator is an organic halide.
Claim 4
Dependent Claim
152 words
A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist comprising a cyclocarbosilane represented by the formula (I): ##STR15## where R 1 , R 2 , R 3 , and R 4 are each hydrogen or an alkyl group, a polymer resin and a photo initiator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask, wherein a polysilane represented by the formula (II): ##STR16## where R 1 , R 2 , R 3 and R 4 are each hydrogen or an alkyl group, and n is a positive integer, is used as a substance having both the function of said polymer resin and the function of said photo initiator.
Claim 5
Dependent Claim
152 words
A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist comprising a cyclocarbosilane represented by the formula (I): ##STR15## where R 1 , R 2 , R 3 , and R 4 are each hydrogen or an alkyl group, a polymer resin and a photo initiator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask, wherein a polysilane represented by the formula (II): ##STR16## where R 1 , R 2 , R 3 and R 4 are each hydrogen or an alkyl group, and n is a positive integer, is used as a substance having both the function of said polymer resin and the function of said photo initiator.
Claim 6
Dependent Claim
153 words
A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist comprising a cyclocarbosilane represented by the formula (I): ##STR17## where R 1 , R 2 , R 3 , and R 4 are each hydrogen or an alkyl group, a polymer resin and a photo initiator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask, wherein a polydisilanylene phenylene represented by the formula (III): ##STR18## where R 1 , R 2 , R 3 and R 4 are each hydrogen or an alkyl group, and n is a positive integer, is used as a substance having both the function of said polymer resin and the function of said photo initiator.
Claim 7
Dependent Claim
153 words
A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist comprising a cyclocarbosilane represented by the formula (I): ##STR17## where R 1 , R 2 , R 3 , and R 4 are each hydrogen or an alkyl group, a polymer resin and a photo initiator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask, wherein a polydisilanylene phenylene represented by the formula (III): ##STR18## where R 1 , R 2 , R 3 and R 4 are each hydrogen or an alkyl group, and n is a positive integer, is used as a substance having both the function of said polymer resin and the function of said photo initiator.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 7.5 Years (Year 8) | 1999-03-03 | 1999-09-02 | 2000-03-03 | $3760.00 | Window Closed / Lapsed |
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