US4464460A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for making an imaged oxygen-reactive ion etch barrier
Assignee: International Business Machines Corp
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Filing: 1983-06-28
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Granted: 1984-08-07
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Expires: 2003-06-28
Abstract
Abstract A process for making an image oxygen-reactive ion etch barrier using a polysilane that is resistant to resistive ion etching and is also a positive acting resist.
Inventors
- 👤 Hiroyuki Hiraoka
- 👤 Donald C. Hofer
- 👤 Robert D. Miller
- 👤 Lester A. Pederson
- 👤 Carlton G. Willson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 02:36
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; G03F7/075; G03F7/0754
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
136 words
A process for making an imaged oxygen-reactive ion etch barrier, said process being characterized by the steps of (1) coating a substrate with a polymer layer; (2) dissolving a polysilane having a molecular weight (Mw) above 4,000 and a glass transition temperature above 100° C. in an organic solvent in which said polymer layer is insoluble; (3) coating said dissolved polysilane as a film on the polymer coated substrate; (4) exposing said polysilane film in an imagewise manner to radiation; (5) developing the polysilane film by contacting it with a solvent to dissolve the areas which have been exposed to radiation and thereby uncover portions of the polymer layer; and (6) exposing the system to anisotropic oxygen-reactive ion etching to uncover portions of the substrate and thereby generate a high resolution, high aspect ratio relief structure.
Claim 2
Dependent Claim
136 words
A process for making an imaged oxygen-reactive ion etch barrier, said process being characterized by the steps of (1) coating a substrate with a polymer layer; (2) dissolving a polysilane having a molecular weight (Mw) above 4,000 and a glass transition temperature above 100° C. in an organic solvent in which said polymer layer is insoluble; (3) coating said dissolved polysilane as a film on the polymer coated substrate; (4) exposing said polysilane film in an imagewise manner to radiation; (5) developing the polysilane film by contacting it with a solvent to dissolve the areas which have been exposed to radiation and thereby uncover portions of the polymer layer; and (6) exposing the system to anisotropic oxygen-reactive ion etching to uncover portions of the substrate and thereby generate a high resolution, high aspect ratio relief structure.
Claim 3
Dependent Claim
138 words
A process for making an images oxygen-reactive ion etch barrier, said process being characterized by the steps of: (1) coating a substrate successively with first a polymer layer, secondly a layer of polysilane having a molecular weight (Mw) above 4,000 and a glass transition temperature above 100° C. and cast from a solvent in which said polymer layer is insoluble, and thirdly with a lithographic resist layer; (2) imagewise exposing and then developing the resist layer to form relief images that uncover portions of the polysilane layer; (3) exposing the uncovered portions of the polysilane layer to CF 4 -O 2 etching and thereby uncovering portions of the polymer layer; and (4) exposing the system to anisotropic oxygen reactive ion etching to uncover portions of the substrate, and thereby generate a high resolution, high aspect ratio relief structure.
Claim 4
Dependent Claim
138 words
A process for making an images oxygen-reactive ion etch barrier, said process being characterized by the steps of: (1) coating a substrate successively with first a polymer layer, secondly a layer of polysilane having a molecular weight (Mw) above 4,000 and a glass transition temperature above 100° C. and cast from a solvent in which said polymer layer is insoluble, and thirdly with a lithographic resist layer; (2) imagewise exposing and then developing the resist layer to form relief images that uncover portions of the polysilane layer; (3) exposing the uncovered portions of the polysilane layer to CF 4 -O 2 etching and thereby uncovering portions of the polymer layer; and (4) exposing the system to anisotropic oxygen reactive ion etching to uncover portions of the substrate, and thereby generate a high resolution, high aspect ratio relief structure.
Claim 5
Dependent Claim
14 words
A process as claimed in claim 1 wherein the polysilane is poly(phenyl methyl silane).
Claim 6
Dependent Claim
18 words
A process as claimed in claim 1 wherein the polysilane is a 1:1 copolymer of dichlorodimethylsilane and dichlorophenylmethylsilane.
Claim 7
Dependent Claim
14 words
A process as claimed in claim 1 wherein the polysilane is poly(cyclohexyl methyl silane).
Claim 8
Dependent Claim
14 words
A process as claimed in claim 2 wherein the polysilane is poly(phenyl methyl silane).
Claim 9
Dependent Claim
18 words
A process as claimed in claim 2 wherein the polysilane is a 1:1 copolymer of dichlorodimethylsilane and dichlorophenylmethylsilane.
Claim 10
Dependent Claim
14 words
A process as claimed in claim 2 wherein the polysilane is poly(cyclohexyl methyl silane).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-07 | 1988-02-06 | 1988-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-07 | 1992-02-06 | 1992-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-07 | 1996-02-06 | 1996-08-07 | $7700.00 | Window Closed / Lapsed |