US4863833A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pattern-forming material and its production and use
Assignee: Fujitsu Ltd
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Filing: 1987-03-16
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Granted: 1989-09-05
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Expires: 2007-03-16
Abstract
Abstract A high-energy radiation-sensitive pattern-forming resist material consisting of polysilsesquioxane having no hydroxyl group in its molecule. The pattern-forming material of this invention has an improved sensitivity to high-energy radiation exposure, a high resistance to dry etching, a high resolution capability, and an improved thermal stability.
Inventors
- 👤 Shun-ichi Fukuyama
- 👤 Yasuhiro Yoneda
- 👤 Masashi Miyagawa
- 👤 Kota Nishii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:43
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
74 words
A high-energy radiation-sensitive, pattern-forming resist material which consists of polysilsesquioxane having no hydroxyl group in its molecule, said polysilsesquioxane being silylated polysilsesquioxane of the formula: ##STR12## in which R 1 and R 2 are the same or different and each represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted vinyl group, and m is a positive integer in the approximate range of 25 to 4,000.
Claim 2
Dependent Claim
74 words
A high-energy radiation-sensitive, pattern-forming resist material which consists of polysilsesquioxane having no hydroxyl group in its molecule, said polysilsesquioxane being silylated polysilsesquioxane of the formula: ##STR12## in which R 1 and R 2 are the same or different and each represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted vinyl group, and m is a positive integer in the approximate range of 25 to 4,000.
Claim 3
Dependent Claim
76 words
A high-energy radiation-sensitive, pattern-forming resist material which consists of polysilsesquioxane having no hydroxyl group in its molecule, said polysilsesquioxane being a silylated polysilsesquioxane of the formula: ##STR13## in which R 1 and R 2 are the same or different and each represents a substituted or unsubstituted alkyl, aryl or vinyl group, R 3 is a substituted or unsubstituted alkyl or aryl group, and m is a positive integer in the approximate range of 25 to 4,000.
Claim 4
Dependent Claim
76 words
A high-energy radiation-sensitive, pattern-forming resist material which consists of polysilsesquioxane having no hydroxyl group in its molecule, said polysilsesquioxane being a silylated polysilsesquioxane of the formula: ##STR13## in which R 1 and R 2 are the same or different and each represents a substituted or unsubstituted alkyl, aryl or vinyl group, R 3 is a substituted or unsubstituted alkyl or aryl group, and m is a positive integer in the approximate range of 25 to 4,000.
References Cited (Backward Citations)
EP0049127A1
Cited
US4600685A
Cited
JPS57141642A
Cited
DE3139316A1
Cited
EP0076656A2
Cited
EP0096596A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-04 | 1993-03-06 | 1993-09-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-04 | 1997-03-06 | 1997-09-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-04 | 2001-03-06 | 2001-09-05 | $7700.00 | Window Closed / Lapsed |