US4481279A — Dry-developing resist composition

Claim 1

Independent Claim 95 words

A dry-developing positive resist composition consisting of (a) a polymeric material containing, in the molecular sructure, (i) unsaturated hydrocarbon bonds including at least one of vinyl, allyl, cinnamoyl, or acryl double bonds, (ii) epoxy groups or (iii) halogen atoms, and (b) 1% to 70% by weight, based on the weight of the composition, of a silicon compound, wherein the silicon compound is selected from the group consisting of bis(p-biphenyl)diphenylsilane, bis(phenylamino)dimethysilane, t-butyldimethylchlorosilane, t-butyldiphenylchlorosilane, dibenzyldimethylsilane, dicyanodimethylsilane, diphenylsilanediol, tetraacetoxysilane, tetraphenoxysilane, tetraphenoxysilane, tetraphenysilane, tribenzylchlorosilane, triphenylchorosilane, triphenylethylsilane, triphenylfluorosilane, triphenylsilane, triphenylsilanol, triphenylsilylazido, triphenylvinylsilane, 1,2-dimethyl-1,1,2,2-tetraphenyldisilane, 1,1,1-trimethyl-2,2,2-triphenyldisilane, 1,3-dimethyl-1,1,3,3-tetraphenyldisiloxane, 1,3,-divinyl-1,1,3,3-tetraphenyldisiloxane, 1,3-ethoxy-1,1,3,3-teraphenyldisiloxane, 1,1,5,5-tetraphenyl-1,3,3,5-tetramethyltrisiloxane and 1,4-bis(hydroxydimethylsilyl)benzene.

Claim 2

Dependent Claim 95 words

A dry-developing positive resist composition consisting of (a) a polymeric material containing, in the molecular sructure, (i) unsaturated hydrocarbon bonds including at least one of vinyl, allyl, cinnamoyl, or acryl double bonds, (ii) epoxy groups or (iii) halogen atoms, and (b) 1% to 70% by weight, based on the weight of the composition, of a silicon compound, wherein the silicon compound is selected from the group consisting of bis(p-biphenyl)diphenylsilane, bis(phenylamino)dimethysilane, t-butyldimethylchlorosilane, t-butyldiphenylchlorosilane, dibenzyldimethylsilane, dicyanodimethylsilane, diphenylsilanediol, tetraacetoxysilane, tetraphenoxysilane, tetraphenoxysilane, tetraphenysilane, tribenzylchlorosilane, triphenylchorosilane, triphenylethylsilane, triphenylfluorosilane, triphenylsilane, triphenylsilanol, triphenylsilylazido, triphenylvinylsilane, 1,2-dimethyl-1,1,2,2-tetraphenyldisilane, 1,1,1-trimethyl-2,2,2-triphenyldisilane, 1,3-dimethyl-1,1,3,3-tetraphenyldisiloxane, 1,3,-divinyl-1,1,3,3-tetraphenyldisiloxane, 1,3-ethoxy-1,1,3,3-teraphenyldisiloxane, 1,1,5,5-tetraphenyl-1,3,3,5-tetramethyltrisiloxane and 1,4-bis(hydroxydimethylsilyl)benzene.

Claim 3

Dependent Claim 103 words

A process for forming a positive resist pattern on a substrate, comprising coating the substrate to form a resist layer, said resist layer comprising (a) a polymeric material containing, in the molecular structure, (i) unsaturated hydrocarbon bonds including vinyl, allyl, cinnamoyl, or acryl double bonds, (ii) epoxy groups or (iii) halogen atoms, and (b) 1% to 70% by weight, based on the weight of the composition, of a silicon compound, selectively exposing the resist layer to radiation, and developing a positive resist pattern on the substrate by treatment with gas plasma to remove the part of said resist layer exposed to said radiation.

Claim 4

Dependent Claim 103 words

A process for forming a positive resist pattern on a substrate, comprising coating the substrate to form a resist layer, said resist layer comprising (a) a polymeric material containing, in the molecular structure, (i) unsaturated hydrocarbon bonds including vinyl, allyl, cinnamoyl, or acryl double bonds, (ii) epoxy groups or (iii) halogen atoms, and (b) 1% to 70% by weight, based on the weight of the composition, of a silicon compound, selectively exposing the resist layer to radiation, and developing a positive resist pattern on the substrate by treatment with gas plasma to remove the part of said resist layer exposed to said radiation.

Claim 5

Dependent Claim 23 words

A process as claimed in claim 2, wherein the radiation is selected from an electron beam, X-ray, ion beam and deep ultraviolet radiation.

Claim 6

Dependent Claim 28 words

A process as claimed in claim 2, wherein the gas plasma is selected form oxygen plasma, argon gas plasma, mixed oxygen-argon gas plasma, and mixed oxygen-fluorine gas plasma.

Claim 7

Dependent Claim 31 words

A process as claimed in claim 2, wherein an intermediate layer is provided between the resist layer and the substrate, and said treatment with gas plasma also etches said intermediate layer.

Claim 8

Dependent Claim 23 words

A process as claimed in claim 5 wherein the intermediate layer is composed of polyvinyl carbazole, polystyrene, phenol resin, cyclized polyisoprene, or polyimide.

Claim 9

Dependent Claim 81 words

The process of claim 2 or 5, wherein said silicon compound is selected from the group consisting of the compounds of the following formulae I to V, ##STR2## in which each X represents methyl, phenyl, biphenyl, phenylamino, phenoxy, benzyl, cyano, vinyl, or acetoxy; each Y represents hydrogen, hydroxy, azido, vinyl, methoxy, ethoxy, butoxy, phenoxy, halogen, benzyl, phenyl, methyl, t-butyl, biphenyl, or acetoxy; and each Z represents phenyl, hydroxy, vinyl, methoxy, ethoxy, butoxy, benzyl, methyl, t-butyl, phenoxy, halogen, biphenyl, or acetoxy; and

Claim 10

Dependent Claim 1 words

4-bis(hydroxydimethyl-silyl)benzene.

Claim 11

Dependent Claim 1 words

4-bis(hydroxydimethyl-silyl)benzene.

Claim 12

Dependent Claim 28 words

The process of claim 7, wherein the polymeric material is selected fromt the group consisting of polyglycidyl methacrylate, epoxydated polybutadiene, glycidyl methacrylateethyl methacrylate copolymer, and vinyl halide polymers.

Claim 13

Dependent Claim 59 words

The process of claim 7, wherein the polymeric material is selected from the group consisting of polymers of alkadienes, cyclized polymers thereof or copolymers thereof with monomers copolymerizable with the alkadiene monomers, polymers of dicarboxylic diallyl esters, polymers of triallyl cyanurate or isocyanurate or copolymers thereof, polymers having cynnamoyl groups, polymers having acryl or methacryl groups, and unsaturated polyesters.

Claim 14

Dependent Claim 40 words

The process of claim 7, wherein the silicon compound is selected from the group consisting of bis(p-biphenyl)diphenylsilane, bis(phenyl-amino)dimethylsilane, t-butyldimethylchlorosilane, t-butyl-diphenylchlorosilane, dibenzyldimethylsilane, dicyanodimethylsilane, diphenylsilanediol, tetraacetoxysilane, tetraphenoxysilane, tetraphenylsilane, tribenzylchlorosilane, triphenylchlorosilane, triphenylethylsilane, triphenylflorosilane, triphenylsilane, triphenylsilanol, triphenylsilylazido, triphenylvinylsilane, 1,2-dimethyl-1,1,2,2-tetraphenyldisilane, 1,1,1-trimethyl-2,2,2-triphenyldisilane, 1,3-dimethyl-1,1,3,3-tetraphenyldisiloxane, 1,3-divinyl-1,1,3,3-tetraphenyldisiloxane, 1,3-ethoxy-1,1,3,3-tetraphenyldisiloxane, 1,1,5,5-tetraphenyl-1,3,3,5-tetramethyltrisiloxane.

Claim 15

Dependent Claim 36 words

The process of claim 2, 3, 4, 5 or 6, wherein no further step is required for providing said positive resist pattern between said exposing to said radiation and said developing treatment with said gas plasma.

Claim 16

Dependent Claim 31 words

The process of claim 7, wherein no further step is required for providing said positive resist pattern between said exposing to said radiation and said developing treatment with said gas plasma.

Claim 17

Dependent Claim 124 words

A dry-developing positive resist composition consisting of (a) a polymeric material containing, in the molecular structure, (i) unsaturated hydrocarbon bonds including vinyl, allyl, cinnamoyl, or acryl double bonds, (ii) epoxy groups or (iii) halogen atoms, and (b) 1% to 70% by weight, based on the weight of the composition, of a silicon compound, wherein the silicon compound is selected from the group consisting of: the compounds of the following formulas, ##STR3## in which each X represents methyl, phenyl, biphenyl, phenylamino, phenoxy, benzyl, cyano, vinyl, or acetoxy; each Y represents hydrogen, hydroxy, azido, vinyl, methoxy, ethoxy, butoxy, phenoxy, halogen, benzyl, phenyl, methyl, t-butyl, biphenyl, or acetoxy; and each Z represents phenyl, hydroxy, vinyl, methoxy, ethoxy, butoxy, benzyl, methyl, t-butyl, phenoxy, halogen, biphenyl, or acetoxy; and

Claim 18

Dependent Claim 124 words

A dry-developing positive resist composition consisting of (a) a polymeric material containing, in the molecular structure, (i) unsaturated hydrocarbon bonds including vinyl, allyl, cinnamoyl, or acryl double bonds, (ii) epoxy groups or (iii) halogen atoms, and (b) 1% to 70% by weight, based on the weight of the composition, of a silicon compound, wherein the silicon compound is selected from the group consisting of: the compounds of the following formulas, ##STR3## in which each X represents methyl, phenyl, biphenyl, phenylamino, phenoxy, benzyl, cyano, vinyl, or acetoxy; each Y represents hydrogen, hydroxy, azido, vinyl, methoxy, ethoxy, butoxy, phenoxy, halogen, benzyl, phenyl, methyl, t-butyl, biphenyl, or acetoxy; and each Z represents phenyl, hydroxy, vinyl, methoxy, ethoxy, butoxy, benzyl, methyl, t-butyl, phenoxy, halogen, biphenyl, or acetoxy; and

Claim 19

Dependent Claim 1 words

4-bis(hydroxydimethyl-silyl)benzene.

Claim 20

Dependent Claim 1 words

4-bis(hydroxydimethyl-silyl)benzene.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1987-11-06	1988-05-07	1988-11-06	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1991-11-06	1992-05-07	1992-11-06	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1995-11-06	1996-05-07	1996-11-06	$7700.00	Window Closed / Lapsed

Dry-developing resist composition

Abstract

Inventors

Bibliographic Details

Claims Analysis

References Cited (Backward Citations)

USPTO Annuity & Maintenance Windows

Assigned Categories & Tags

Assign Category Tag