Patent US5080753A successfully refreshed from Google Patents.
US5080753A
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Laser deposition of crystalline boron nitride films
Assignee: Motors Liquidation Co
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Filing: 1991-03-04
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Granted: 1992-01-14
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Expires: 2011-03-04
Abstract
Abstract Thin films of boron nitride are grown on single crystal silicon substrates using laser deposition techniques. The films are characterized by essentially a single crystal throughout and having a cubic structure which is in epitaxial registry with the underlying silicon substrate.
Inventors
- 👤 Gary L. Doll
- 👤 Jeffrey A. Sell
- 👤 Charles A. Peck
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 02:19
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/40; C30B29/403; H10P14/6349; H10P14/68; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
121 words
A method for forming thin films of boron nitride comprising the following steps: providing a silicon substrate oriented essentially throughout along its [100] crystallographic axis and heating said substrate to approximately 400° C.; providing a boron nitride target comprised essentially of hexagonally oriented pyrolitic boron nitride, said boron nitride target being disposed in proximity with said silicon substrate; inducing vaporization of said boron nitride target using a laser operating at appropriate parameters, such that said vaporized boron nitride deposits onto a surface of said silicon substrate to form a thin film layer of boron nitride on said silicon surface, said thin film layer of boron nitride being characterized by a single crystal, cubic structure and crystallographically aligned with said silicon substrate.
Claim 2
Independent Claim
121 words
A method for forming thin films of boron nitride comprising the following steps: providing a silicon substrate oriented essentially throughout along its [100] crystallographic axis and heating said substrate to approximately 400° C.; providing a boron nitride target comprised essentially of hexagonally oriented pyrolitic boron nitride, said boron nitride target being disposed in proximity with said silicon substrate; inducing vaporization of said boron nitride target using a laser operating at appropriate parameters, such that said vaporized boron nitride deposits onto a surface of said silicon substrate to form a thin film layer of boron nitride on said silicon surface, said thin film layer of boron nitride being characterized by a single crystal, cubic structure and crystallographically aligned with said silicon substrate.
Claim 3
Dependent Claim
32 words
A method for forming thin films of boron nitride as recited in claim 1 wherein said laser is a KrF excimer laser source which operates at a wavelength of approximately 248 nanometers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-13 | 1995-07-15 | 1996-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-13 | 1999-07-15 | 2000-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-13 | 2003-07-15 | 2004-01-14 | $7700.00 | Window Closed / Lapsed |