Read-only-memory having sectional output lines with related memory elements responsive to early and late-occurring input signals

Claim 2

A read-only-memory having a plurality of address lines, a plurality of output lines, and a plurality of read-only memory elements located at the junctions of the address lines and the output lines selectively effective to establish different combinations of high and low output signals on the output lines in response to input signals on different input lines, wherein each output line is divided into first and second parts, the input signals including early-occurring input signals and late-occurring input signals, the early-occurring input signals being applied to respective address lines connected to memory elements connected to the first parts of the output lines and the late-occurring input signals being applied to respective address lines connected to memory elements connected to the second parts of the output lines, switch means being provided for enabling output signals to be derived from the second parts of the output lines in response to a late-occurring input signal with the first parts of the output lines disconnected from the second parts of the output lines.

Claim 3

A memory according to claim 1 wherein means are provided to precharge the output lines in each cycle of operation of the memory, and the memory elements are selectively effective to discharge the parts of the output lines to which they are connected in response to an input signal.

Claim 4

A memory according to claim 2 wherein separate means are provided to precharge the first and second parts of the output lines.

Claim 5

A memory according to claim 2 including precharge means for each output line and wherein the switch means are arranged respectively to connect together the first and second parts of the output lines during precharging and when an early-occurring input signal is applied to the memory.

Claim 6

A memory according to claim 2 including a plurality of further switch means respectively effective to connect the output lines to output terminals after selective discharging of the output lines by memory elements.

Claim 7

A memory according to claim 1 wherein the switch means are arranged respectively to connect together the first and second parts of the output lines when an early-occurring input signal is applied to the memory.

Claim 8

A memory according to claim 1 wherein the switch means are arranged to connect the first parts of the output lines to output terminals when an early-occurring input signal is applied to the memory, and to connect the second parts of the output lines to the output terminals when a late-occurring input signal is applied to the memory.

Claim 9

A memory according to claim 1 wherein each memory element includes a normally non-conducting transistor which is selectively programmed to become conducting in response to an input signal or to remain non-conducting.

Claim 10

A read-only-memory according to claim 1 wherein the first parts of the output lines are cascaded to the second parts of the output lines separated by the switch means.

Claim 11

The read-only memory according to claim 1 further including a decoder for decoding the early-occurring input signals and the late-occurring input signals.

Claim 12

A memory comprising: first memory elements having corresponding first memory control lines; a first data line connected to said first memory elements; said first memory elements being responsive to memory control signals on the first memory control lines to that a memory control signal on a particular one of said first memory control lines discharges said first data line via the first memory element corresponding to the particular first memory control line; second memory elements having corresponding second memory control lines; a second data line connected to said second memory elements; said second memory elements being responsive to memory control signals on the second memory control lines so that a memory control signal on a particular one of said second memory control lines discharges said second data line via the second memory element corresponding to the particular second memory control line; a switch element connected to said first and second data lines and having a switch control line to control said switch element operative to selectively provide a connection between said first and second data lines; an output element connected to said second data line operative to receive an output signal from said second data line; and a circuit operative to generate memory control signals and a switch control signal to control the output signal wherein: the switch element in response to the occurrence of the switch control signal on said switch control line provides a connection between said first and said second data lines; and memory control signals on the particular one of said first memory control lines discharging said first data line via the first memory element corresponding to the particular first memory control line and also discharging said second data line via the first memory element corresponding to the particular first memory control line when the switch control signal is present on the switch control line of said switch element to provide a connection between said first and said second data lines.

Claim 13

A memory comprising: first memory elements having corresponding first memory control lines; a first data line connected to said first memory elements; said first memory elements being responsive to memory control signals on the first memory control lines to that a memory control signal on a particular one of said first memory control lines discharges said first data line via the first memory element corresponding to the particular first memory control line; second memory elements having corresponding second memory control lines; a second data line connected to said second memory elements; said second memory elements being responsive to memory control signals on the second memory control lines so that a memory control signal on a particular one of said second memory control lines discharges said second data line via the second memory element corresponding to the particular second memory control line; a switch element connected to said first and second data lines and having a switch control line to control said switch element operative to selectively provide a connection between said first and second data lines; an output element connected to said second data line operative to receive an output signal from said second data line; and a circuit operative to generate memory control signals and a switch control signal to control the output signal wherein: the switch element in response to the occurrence of the switch control signal on said switch control line provides a connection between said first and said second data lines; and memory control signals on the particular one of said first memory control lines discharging said first data line via the first memory element corresponding to the particular first memory control line and also discharging said second data line via the first memory element corresponding to the particular first memory control line when the switch control signal is present on the switch control line of said switch element to provide a connection between said first and said second data lines.

Claim 14

A memory as set forth in claim 11, wherein said circuit generates memory control signals on the particular one of said second memory control lines to discharge said second data line via the second memory element corresponding to the particular second memory control line; and the switch control signal on the switch control line of the switch element being turned off for disconnecting said first and second data lines.

Claim 15

A memory as set forth in claim 11, further comprising a charging circuit responsive to a charge control signal for charging said first and said second data lines.

Claim 16

A memory as set forth in claim 11, further comprising first and second charging circuits respectively responsive to first and second charge control signals for charging said first and second data lines.

Claim 17

A memory as set forth in claim 14, wherein the first and second charge control signals occur simultaneously for actuating said first and second charging circuits to charge the first and second data lines simultaneously.

Claim 18

A memory as set forth in claim 11, wherein said output element connected to said second data line includes an output buffer responsive to an output control signal.

Claim 19

A memory as set forth in claim 11, wherein said first and second memory elements are selectively programmable so as to provide functional memory elements representative of one of the binary digits "1" and "0" and non-functional memory elements representative of the other of the binary digits "1" and "0"; respective functional memory elements becoming conductive in response to an input signal provided as a memory control signal on a particular one of said memory control lines for discharging the corresponding one of said first and second data lines to which the functional memory element related to the particular one of the memory control lines is connected; whereby the memory is a read-only-memory.

Claim 22

A method of operating a memory as set forth in claim 18, further including simultaneously precharging said first and second data lines prior to the generation of said first and second memory element control signals.

Claim 23

A method of operating a memory as set forth in claim 18, further including precharging said first data line via a first charging circuit; and precharging said second data line via a second charging circuit.

Claim 24

A method of operating a memory as st forth in claim 20, wherein the precharging of said first and second data lines occurs simultaneously.

Claim 25

A method of operating a memory as set forth in claim 18, further including discontinuing the switch control signal for the switch between said first and second data lines to disconnect said second data line form said first data line; and deriving an output signal form said second data line in response to a second memory element control signal provided to a second memory cell when said second data line is disconnected from said first data line.

Claim 26

A read-only-memory comprising: a plurality of address lines; a plurality of output lines, each of said output lines respectively crossing said plurality of address lines to provide intersections between each of said address lines and each of said output lines; a plurality of read-only-memory elements respectively located at the intersections of the address lines and the output lines; said plurality of read-only-memory elements being selectively programmable so as to provide functional memory elements representative of one of the binary digits "1" and "0" and non-function memory elements representative of the other of the binary digits "1" and "0"; said plurality of read-only-memory elements being selectively actuated in response to input signals on the address lines to provide different combinations of high and low output signals representative of binary digits "1" and "0", respectively; each of said plurality of output lines being defined by a first output line part, a second output line part, and an output line extension; first switch means operably connected to said first and second output line parts for each of said plurality of output lines and alternatively disposable in closed and open positions, said first switch means being responsive to a switch control signal to assume a closed position for connecting said first and second output line parts to each other and disconnecting said first and second output line parts from each other when in an open position in the absence of the switch control signal; second switch means operably connected to said second output line part and said output line extension for each of said plurality of output lines and alternatively disposable in closed and open positions, said second switch means being responsive to an output control signal to assume a closed position for connecting said second output line part to said output line extension and disconnecting said second output line part from said output line extension when in an open position in the absence of the output control signal; said plurality of read-only-memory elements including a first group of read-only-memory elements connected to said first output line part of each of said plurality of output lines, and a second group of read-only-memory elements connected to said second output line part of each of said plurality of output lines; said plurality of address lines including a first group of address lines corresponding to each of said first output line parts and connected to corresponding read-only-memory elements of said first group of read-only-memory elements for each of said first output line parts, and a second group of address lines corresponding to each of said second output line parts and connected to corresponding read-only-memory elements of said second group of read-only-memory elements for each of said second output line parts; means for precharging said first and second output line parts of each of said plurality of output lines in a beginning stage of each cycle of memory operation; and the functional memory elements of said read-only-memory elements being respectively effective to discharge the corresponding one of said first and second output line parts of the output line to which they are connected in response to an input signal selectively applied to the address line connected to a particular read-only-memory element.

Claim 27

A read-only-memory comprising: a plurality of address lines; a plurality of output lines, each of said output lines respectively crossing said plurality of address lines to provide intersections between each of said address lines and each of said output lines; a plurality of read-only-memory elements respectively located at the intersections of the address lines and the output lines; said plurality of read-only-memory elements being selectively programmable so as to provide functional memory elements representative of one of the binary digits "1" and "0" and non-function memory elements representative of the other of the binary digits "1" and "0"; said plurality of read-only-memory elements being selectively actuated in response to input signals on the address lines to provide different combinations of high and low output signals representative of binary digits "1" and "0", respectively; each of said plurality of output lines being defined by a first output line part, a second output line part, and an output line extension; first switch means operably connected to said first and second output line parts for each of said plurality of output lines and alternatively disposable in closed and open positions, said first switch means being responsive to a switch control signal to assume a closed position for connecting said first and second output line parts to each other and disconnecting said first and second output line parts from each other when in an open position in the absence of the switch control signal; second switch means operably connected to said second output line part and said output line extension for each of said plurality of output lines and alternatively disposable in closed and open positions, said second switch means being responsive to an output control signal to assume a closed position for connecting said second output line part to said output line extension and disconnecting said second output line part from said output line extension when in an open position in the absence of the output control signal; said plurality of read-only-memory elements including a first group of read-only-memory elements connected to said first output line part of each of said plurality of output lines, and a second group of read-only-memory elements connected to said second output line part of each of said plurality of output lines; said plurality of address lines including a first group of address lines corresponding to each of said first output line parts and connected to corresponding read-only-memory elements of said first group of read-only-memory elements for each of said first output line parts, and a second group of address lines corresponding to each of said second output line parts and connected to corresponding read-only-memory elements of said second group of read-only-memory elements for each of said second output line parts; means for precharging said first and second output line parts of each of said plurality of output lines in a beginning stage of each cycle of memory operation; and the functional memory elements of said read-only-memory elements being respectively effective to discharge the corresponding one of said first and second output line parts of the output line to which they are connected in response to an input signal selectively applied to the address line connected to a particular read-only-memory element.

Claim 28

A read-only-memory as set forth in claim 23, wherein input signals as applied to said plurality of address lines include early-occurring input signals and late-occurring input signals; the early-occurring input signals being applied to respective address lines included in said first group of address lines connected to corresponding read-only-memory elements of said first group of read-only-memory elements and corresponding to each of said first output line parts; the late-occurring input signals being applied to respective address lines included in said second group of address lines connected to corresponding read-only-memory elements of said second group of read-only-memory elements and corresponding to each of said second output line parts; and said second switch mean being responsive to the output control signal for a selected output line of said plurality of output lines for connecting said second output line part to said output line extension to produce an output signal on said output line extension from said second output line part in response to a late-occurring input signal applied to one of said second group of address lines connected to a particular read-only-memory element of said second group of read-only-memory elements when said first switch means is in an open position disconnecting said first output line part from said second output line part.

Claim 29

A read-only-memory as set forth in claim 23, wherein said precharging means includes a first precharging means for precharging said first output line pats of each of said plurality of output lines, and a second precharging means separate from said first precharging means for precharging said second output line parts of each of said plurality of output lines.