Patent US5077587A successfully refreshed from Google Patents.
US5077587A
Expired / Lapsed
US
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Light-emitting diode with anti-reflection layer optimization
Assignee: Eastman Kodak Co
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Filing: 1990-10-09
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Granted: 1991-12-31
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Expires: 2010-10-09
Abstract
Abstract Improved light output from LED's or the like are obtained by modifying the combined thickness dimensions of a transmissive diffusion mask layer and anti-reflection coating layer at the periphery of the window forming the light-emitting region.
Inventors
- 👤 Christopher J. Albergo
- 👤 Robert J. Maryjanowski
- 👤 Mary L. Ott
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:10
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/84; H10H20/81; H10H20/822; H10H20/824; H10H29/00; H10H29/10; H10H29/14
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
135 words
In a semiconductor light-emitting device including means defining a semiconductor layer for forming a light-emitting region when energized; a light transmissive mask layer means having an opening therein defining a window for use in diffusing a dopant into said semiconductor layer to form the light-emitting region; an anti-reflection layer covering said window and being of a thickness to reduce to a minimum the internal reflection of light generated beneath said anti-reflection layer to enhance the amount of light emitted by said device through said window; and the improvement which comprises: the anti-reflection layer overlying the mask layer at the periphery of the window and the mask layer and anti-reflection layer being of a combined thickness to reduce to a minimum the internal reflection of light generated beneath said mask adjacent the periphery of the window.
Claim 2
Dependent Claim
135 words
In a semiconductor light-emitting device including means defining a semiconductor layer for forming a light-emitting region when energized; a light transmissive mask layer means having an opening therein defining a window for use in diffusing a dopant into said semiconductor layer to form the light-emitting region; an anti-reflection layer covering said window and being of a thickness to reduce to a minimum the internal reflection of light generated beneath said anti-reflection layer to enhance the amount of light emitted by said device through said window; and the improvement which comprises: the anti-reflection layer overlying the mask layer at the periphery of the window and the mask layer and anti-reflection layer being of a combined thickness to reduce to a minimum the internal reflection of light generated beneath said mask adjacent the periphery of the window.
Claim 3
Dependent Claim
13 words
The device of claim 1 and wherein the anti-reflection layer is a dielectric.
Claim 4
Dependent Claim
46 words
The device of claim 2 and wherein the mask layer and anti-reflection layers are each formed of silicon nitride and wherein the thickness of the anti-reflection layer overlying the mask area is about 2700 Å and the thickness of the mask layer is about 1800 Å.
Claim 5
Independent Claim
31 words
The device of claims 1, 2 or 3 and wherein the semiconductor layer comprises an n-type graded layer of gallium arsenide phosphide and a p-type region diffused in the n-type layer.
Claim 6
Dependent Claim
125 words
In a light-emitting diode including a substrate; a layer of n-type semiconductor material supported on said substrate; a light transmissive mask layer means of silicon nitride and having an opening thereon for defining a window through which a dopant was diffused to form a p-type semiconductor region; an anti-reflection layer overlying said mask layer and said window to enhance light output from said window, the anti-reflection layer being a silicon nitride of about 2700 Å units in thickness, and the improvement which comprises: the mask layer having a thickness of 1800 Å so that the combined thickness of mask layer and anti-reflection layer at the periphery of the window minimizes internal reflection of light generated beneath said mask layer adjacent the periphery of the window.
Claim 7
Dependent Claim
125 words
In a light-emitting diode including a substrate; a layer of n-type semiconductor material supported on said substrate; a light transmissive mask layer means of silicon nitride and having an opening thereon for defining a window through which a dopant was diffused to form a p-type semiconductor region; an anti-reflection layer overlying said mask layer and said window to enhance light output from said window, the anti-reflection layer being a silicon nitride of about 2700 Å units in thickness, and the improvement which comprises: the mask layer having a thickness of 1800 Å so that the combined thickness of mask layer and anti-reflection layer at the periphery of the window minimizes internal reflection of light generated beneath said mask layer adjacent the periphery of the window.
Claim 8
Dependent Claim
14 words
The diode of claim 5 and wherein the n-type material is gallium arsenide phosphide.
Claim 9
Dependent Claim
15 words
The diode of claim 5 and wherein the p-type semiconductor region has zinc diffused therein.
Claim 10
Dependent Claim
24 words
The light-emitting device of claims 1, 2, 3, and including means supporting a plurality of such devices in an assembly to form a printhead.
Claim 11
Dependent Claim
126 words
In a light-emitting device including a semiconductor material; a mask layer overlying said material and having formed therein an opening defining a light-emitting window; an anti-reflection layer overlying said window and the portion of the mask layer adjacent the window; and the improvement which comprises: providing a combined thickness of mask layer and anti-reflection layer that provides a maximum of light emittance from regions beneath said mask layer at the periphery of the window, and the thickness of the anti-reflection layer overlying the window being different than the combined thickness of the mask layer and anti-reflection layer at the periphery but the thickness of the anti-reflection layer overlying the window being such as to provide a maximum of light emittance from the regions within the window.
Claim 12
Dependent Claim
126 words
In a light-emitting device including a semiconductor material; a mask layer overlying said material and having formed therein an opening defining a light-emitting window; an anti-reflection layer overlying said window and the portion of the mask layer adjacent the window; and the improvement which comprises: providing a combined thickness of mask layer and anti-reflection layer that provides a maximum of light emittance from regions beneath said mask layer at the periphery of the window, and the thickness of the anti-reflection layer overlying the window being different than the combined thickness of the mask layer and anti-reflection layer at the periphery but the thickness of the anti-reflection layer overlying the window being such as to provide a maximum of light emittance from the regions within the window.
Claim 13
Dependent Claim
13 words
The device of claim 9 and wherein the anti-reflection layer is a dielectric.
Claim 14
Dependent Claim
45 words
The device of claim 10 and wherein the mask layer and anti-reflection layers are each formed of silicon nitride and wherein the thickness of the anti-reflection layer overlying the mask layer is about 2700 Å and the thickness of the mask layer is 1800 Å.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-12-30 | 1995-07-01 | 1995-12-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-30 | 1999-07-01 | 1999-12-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-30 | 2003-07-01 | 2003-12-31 | $7700.00 | Window Closed / Lapsed |