Patent US5077227A successfully refreshed from Google Patents.
US5077227A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method for fabricating the same
Assignee: Panasonic Holdings Corp
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Filing: 1990-08-08
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Granted: 1991-12-31
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Expires: 2010-08-08
Abstract
Abstract Disclosed is a structure of a semiconductor integrated circuit such as bipolar transistor, along with the fabrication thereof, in which an active device region such an intrinsic base is formed from, at least, the bottom of the groove formed in a semiconductor substrate, and this active device region and a low resistance electrode take-out region such an extrinsic base formed around the groove are connected favorably with each other.
Inventors
- 👤 Shuichi Kameyama
- 👤 Tadao Komeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:20
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/051; H10D62/00; H10D62/10; H10D62/17; H10D62/177; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
185 words
A method of fabricating a semiconductor device comprising: a step of forming an insulation film with an opening on a principal plane of an epitaxial semiconductor layer of a first type of conductivity; a step of forming a first semiconductor region of a second type of conductivity beneath said insulation film at a depth from said principal plane; a step of forming a groove at a depth from said principal plane by using said insulation film as an etching mask after forming said first semiconductor region; a step of forming a second semiconductor region of said second type of conductivity at a depth from a bottom of said groove by using said insulation film as a mask after forming said groove; and, a step of forming a third semiconductor region of said first type of conductivity in said second semiconductor region of said second type of conductivity by using said insulation film as a mask; wherein an unnecessary extrinsic region of said first semiconductor region in the prospective portion to form the intrinsic region of said second semiconductor region is removed by forming said groove.
Claim 2
Independent Claim
185 words
A method of fabricating a semiconductor device comprising: a step of forming an insulation film with an opening on a principal plane of an epitaxial semiconductor layer of a first type of conductivity; a step of forming a first semiconductor region of a second type of conductivity beneath said insulation film at a depth from said principal plane; a step of forming a groove at a depth from said principal plane by using said insulation film as an etching mask after forming said first semiconductor region; a step of forming a second semiconductor region of said second type of conductivity at a depth from a bottom of said groove by using said insulation film as a mask after forming said groove; and, a step of forming a third semiconductor region of said first type of conductivity in said second semiconductor region of said second type of conductivity by using said insulation film as a mask; wherein an unnecessary extrinsic region of said first semiconductor region in the prospective portion to form the intrinsic region of said second semiconductor region is removed by forming said groove.
Claim 3
Independent Claim
215 words
A method of fabricating a semiconductor device comprising: a step of forming an insulation film with an opening on a principal plane of an epitaxial semiconductor layer of a first type of conductivity; a step of forming a first semiconductor region of a second type of conductivity beneath said insulation film at a depth from said principal plane; a step of forming a groove at a depth from said principal plane by using said insulation film as an etching mask after forming said first semiconductor region; a step of forming a second semiconductor region of said second type of conductivity at a depth from a bottom of said groove by using said insulation film as a mask after forming said groove; and, a step of forming a third semiconductor region of said first type of conductivity in said second semiconductor region of said second type of conductivity by using said insulation film as a mask; wherein said first semiconductor region and said second semiconductor region are physically connected to each other and a width of an intrinsic region of said second semiconductor region is defined by the second semiconductor region not canceled by a lateral diffusion of said first semiconductor region, and wherein the width of the intrinsic region is extended by forming said groove.
Claim 4
Independent Claim
215 words
A method of fabricating a semiconductor device comprising: a step of forming an insulation film with an opening on a principal plane of an epitaxial semiconductor layer of a first type of conductivity; a step of forming a first semiconductor region of a second type of conductivity beneath said insulation film at a depth from said principal plane; a step of forming a groove at a depth from said principal plane by using said insulation film as an etching mask after forming said first semiconductor region; a step of forming a second semiconductor region of said second type of conductivity at a depth from a bottom of said groove by using said insulation film as a mask after forming said groove; and, a step of forming a third semiconductor region of said first type of conductivity in said second semiconductor region of said second type of conductivity by using said insulation film as a mask; wherein said first semiconductor region and said second semiconductor region are physically connected to each other and a width of an intrinsic region of said second semiconductor region is defined by the second semiconductor region not canceled by a lateral diffusion of said first semiconductor region, and wherein the width of the intrinsic region is extended by forming said groove.
Claim 5
Independent Claim
167 words
A method of fabricating a semiconductor device comprising: a step of forming a first semiconductor region of a second type of conductivity at a depth from a principal plane of an epitaxial semiconductor layer of a first type of conductivity; a step of forming an insulation film with an opening on said first semiconductor region; a step of forming a groove at a depth from said principal plane by using said insulation film as an etching mask after forming said first semiconductor region, removing a part of said first semiconductor region in said opening by forming said groove; a step of forming a second semiconductor region of said second type of conductivity at a depth from a bottom of said groove by using said insulation film as a mask after forming said groove; and, a step of forming a third semiconductor region of said first type of conductivity in said second semiconductor region of said second type of conductivity by using said insulation film as a mask.
Claim 6
Independent Claim
167 words
A method of fabricating a semiconductor device comprising: a step of forming a first semiconductor region of a second type of conductivity at a depth from a principal plane of an epitaxial semiconductor layer of a first type of conductivity; a step of forming an insulation film with an opening on said first semiconductor region; a step of forming a groove at a depth from said principal plane by using said insulation film as an etching mask after forming said first semiconductor region, removing a part of said first semiconductor region in said opening by forming said groove; a step of forming a second semiconductor region of said second type of conductivity at a depth from a bottom of said groove by using said insulation film as a mask after forming said groove; and, a step of forming a third semiconductor region of said first type of conductivity in said second semiconductor region of said second type of conductivity by using said insulation film as a mask.
Claim 7
Independent Claim
177 words
A method of fabricating a bipolar semiconductor device comprising: a step of forming an insulation film with an opening on a principal plane of an epitaxial semiconductor collector layer of a first type of conductivity; a step of forming an extrinsic base region of a second type of conductivity beneath said insulation film at a depth from a principal plane; a step of forming a groove at a depth from said principal plane by using said insulation film as an etching mask after forming said extrinsic base region, a step of forming an intrinsic base region of said second type of conductivity at a depth from a bottom of said groove by using said insulation film as a mask after forming said groove; and, a step of forming an emitter region of said first type of conductivity in said intrinsic base region of said second type of conductivity by using said insulation film as a mask; wherein an unnecessary extrinsic region in the prospective portion to form the intrinsic bases region is removed by forming said groove.
Claim 8
Independent Claim
177 words
A method of fabricating a bipolar semiconductor device comprising: a step of forming an insulation film with an opening on a principal plane of an epitaxial semiconductor collector layer of a first type of conductivity; a step of forming an extrinsic base region of a second type of conductivity beneath said insulation film at a depth from a principal plane; a step of forming a groove at a depth from said principal plane by using said insulation film as an etching mask after forming said extrinsic base region, a step of forming an intrinsic base region of said second type of conductivity at a depth from a bottom of said groove by using said insulation film as a mask after forming said groove; and, a step of forming an emitter region of said first type of conductivity in said intrinsic base region of said second type of conductivity by using said insulation film as a mask; wherein an unnecessary extrinsic region in the prospective portion to form the intrinsic bases region is removed by forming said groove.
Claim 9
Independent Claim
213 words
A method of fabricating a bipolar semiconductor device comprising: a step of forming an insulation film with an opening on a principal plane of an epitaxial semiconductor collector layer of a first type of conductivity; a step of forming an extrinsic base region of a second type of conductivity beneath said insulation film at a depth from said principal plane; a step of forming a groove at a depth from said principal plane by using said insulation film as an etching mask after forming said extrinsic base region; a step of forming an intrinsic base region of said second type of conductivity at a depth from a bottom of said groove by using said insulation film as a mask after forming said groove; and, a step of forming an emitter region of said first type of conductivity in said intrinsic base region of said second type of conductivity by using said insulation film as a mask; wherein said extrinsic base region and said intrinsic base region are physically connected to each other and a width of said intrinsic base region is defined by an intrinsic base region not canceled by a lateral diffusion of said extrinsic base region, and wherein the width of the intrinsic base region is extended by forming said groove.
Claim 10
Independent Claim
213 words
A method of fabricating a bipolar semiconductor device comprising: a step of forming an insulation film with an opening on a principal plane of an epitaxial semiconductor collector layer of a first type of conductivity; a step of forming an extrinsic base region of a second type of conductivity beneath said insulation film at a depth from said principal plane; a step of forming a groove at a depth from said principal plane by using said insulation film as an etching mask after forming said extrinsic base region; a step of forming an intrinsic base region of said second type of conductivity at a depth from a bottom of said groove by using said insulation film as a mask after forming said groove; and, a step of forming an emitter region of said first type of conductivity in said intrinsic base region of said second type of conductivity by using said insulation film as a mask; wherein said extrinsic base region and said intrinsic base region are physically connected to each other and a width of said intrinsic base region is defined by an intrinsic base region not canceled by a lateral diffusion of said extrinsic base region, and wherein the width of the intrinsic base region is extended by forming said groove.
Claim 11
Independent Claim
162 words
A method of fabricating a bipolar semiconductor device comprising: a step of forming an extrinsic base region of a second type of conductivity at a depth from a principle plane of an epitaxial semiconductor collector layer of a first type of conductivity; a step of forming an insulation film with an opening on said extrinsic base region; a step of forming a groove at a depth from said principal plane by using said insulation film as an etching mask after forming said extrinsic base region, removing a part of said extrinsic base region in said opening by forming said groove; a step of forming an intrinsic base region of said second type of conductivity at a depth from a bottom of said groove by using said insulation film as a mask after forming said groove; and, a step of forming an emitter region of said first type of conductivity in said intrinsic base region by using said insulation film as a mask.
Claim 12
Independent Claim
162 words
A method of fabricating a bipolar semiconductor device comprising: a step of forming an extrinsic base region of a second type of conductivity at a depth from a principle plane of an epitaxial semiconductor collector layer of a first type of conductivity; a step of forming an insulation film with an opening on said extrinsic base region; a step of forming a groove at a depth from said principal plane by using said insulation film as an etching mask after forming said extrinsic base region, removing a part of said extrinsic base region in said opening by forming said groove; a step of forming an intrinsic base region of said second type of conductivity at a depth from a bottom of said groove by using said insulation film as a mask after forming said groove; and, a step of forming an emitter region of said first type of conductivity in said intrinsic base region by using said insulation film as a mask.
Claim 13
Independent Claim
154 words
A method of fabricating a bipolar semiconductor device comprising: a step of forming an extrinsic base region of a second type of conductivity at a depth from a principle plane of an epitaxial semiconductor collector layer of a first type of conductivity; a step of forming an insulation film with an opening on said extrinsic base region; a step of forming a groove at a depth from said principal plane by using said insulation film as an etching mask after forming said extrinsic base region, removing a part of said extrinsic base region in said opening by forming said groove; a step of forming an intrinsic base region of said second type of conductivity at a depth from a bottom of said groove by using said insulation film as a mask after forming said groove; and, a step of forming an emitter region of said first type of conductivity in said intrinsic base region.
Claim 14
Independent Claim
154 words
A method of fabricating a bipolar semiconductor device comprising: a step of forming an extrinsic base region of a second type of conductivity at a depth from a principle plane of an epitaxial semiconductor collector layer of a first type of conductivity; a step of forming an insulation film with an opening on said extrinsic base region; a step of forming a groove at a depth from said principal plane by using said insulation film as an etching mask after forming said extrinsic base region, removing a part of said extrinsic base region in said opening by forming said groove; a step of forming an intrinsic base region of said second type of conductivity at a depth from a bottom of said groove by using said insulation film as a mask after forming said groove; and, a step of forming an emitter region of said first type of conductivity in said intrinsic base region.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-12-30 | 1995-07-01 | 1995-12-31 | $2000.00 | Window Closed / Lapsed |
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