Solid state semiconductor device

Claim 2

A solid state semiconductor device comprising: (a) a semiconductor substrate; (b) a plurality of photoelectric converting elements formed in said substrate; (c) an insulating layer disposed on said plurality of photoelectric converting elements (d) a control electrode having a plurality of portions disposed on said insulating layer and arranged in a first predetermined pattern, said control electrode controlling the transfer of carriers accumulated in said photo-electric converting elements and said control electrode being transparent so as to transmit a light incident thereon to said plurality of photo-electric converting elements; and (e) wiring means arranged in a second predetermined pattern for short-circuiting a plurality of parts of said control electrode, said wiring means being disposed directly on said control electrode arranged over said photo-electric converting elements and said insulating layer, wherein the width of said wiring means is narrower than that of said control electrode so that a sufficient amount of the light incident upon said control electrode can be transmitted to said photoelectric converting elements through said control electrode to cause said control electrode to function as a light receiving area.

Claim 3

A device according to claim 1, wherein a conductivity of said wiring means is higher than that of said control electrode.

Claim 4

A device according to claim 1, wherein each of said elements includes a potential well.

Claim 5

A device according to claim 3, wherein the photo-electric conversion is performed in the semiconductor substrate under said control electrodes.

Claim 6

A device according to claim 4, wherein said control electrodes are translucent.

Claim 7

A device according to claim 5, wherein said control electrodes include poly-silicon.

Claim 8

A device according to claim 3, wherein said wiring means are arranged at the locations apart from said potential wells.

Claim 9

A device according to claim 1, wherein said wiring means short-circuit at least near the edge portions and near the central portions of said control electrodes.

Claim 10

A solid state semiconductor device comprising: (a) a semiconductor substrate; (b) a plurality of photo-electric converting elements formed in said substrate; (c) a control electrode having a plurality of portions formed over said photo-electric converting elements so that said control electrode is arranged in a photo-electric converting portion and functions as a light receiving element which transmits light to said photo-electric converting elements, said control electrode controlling the transfer of carriers accumulated in said photo-electric converting elements in a first direction, wherein said control electrode is arranged in a second direction in said photo-electric converting portion, and wherein the first direction is arranged substantially perpendicular to the second direction; and (d) wiring means for short-circuiting a plurality of parts of said control electrode, and being arranged in the second direction along said control electrode and disposed directly on a portion of said control electrode arranged over said photo-electric converting elements, wherein the width of said wiring means is narrower than that of said control electrode.

Claim 11

A solid state semiconductor device comprising: (a) a semiconductor substrate; (b) a plurality of photo-electric converting elements formed in said substrate; (c) a control electrode having a plurality of portions formed over said photo-electric converting elements so that said control electrode is arranged in a photo-electric converting portion and functions as a light receiving element which transmits light to said photo-electric converting elements, said control electrode controlling the transfer of carriers accumulated in said photo-electric converting elements in a first direction, wherein said control electrode is arranged in a second direction in said photo-electric converting portion, and wherein the first direction is arranged substantially perpendicular to the second direction; and (d) wiring means for short-circuiting a plurality of parts of said control electrode, and being arranged in the second direction along said control electrode and disposed directly on a portion of said control electrode arranged over said photo-electric converting elements, wherein the width of said wiring means is narrower than that of said control electrode.

Claim 12

A device according to claim 9, wherein a conductivity of said wiring means is higher than that of said control electrode.

Claim 13

A device according to claim 9, wherein said control electrodes are translucent.

Claim 14

A device according to claim 11, wherein said control electrodes include poly-silicon.

Claim 15

A solid state semiconductor device to claim 9, wherein said conductive member is provided over said control electrode.

Claim 16

A device according to claim 9, wherein said plurality of elements constitute a CCD.

Claim 17

A device according to claim 9, wherein said plurality of elements respectively include potential wells.

Claim 18

A device according to claim 15, wherein each of said potential wells stores the charges obtained by the photo-electric conversion.

Claim 19

A device according to claim 16, wherein the photo-electric conversion is performed in the semiconductor substrate under said control electrodes.

Claim 20

A solid state semiconductor device comprising: (a) a semiconductor substrate including an image sensing device formed therein, said image sensing device comprising at least an image portion and an accumulating portion; (b) an insulating layer disposed on said semiconductor substrate; (c) a control electrode having a plurality of portions disposed on said insulating layer and arranged in a first predetermined pattern, said control electrode controlling image sensing operation of said image sensing device, and said control electrode being transparent so as to transmit the incident light to said image sensing device; and (d) wiring means arranged in a second predetermined pattern for short-circuiting said plurality of parts of said control electrode, said wiring means being disposed directly on said control electrode and said insulating layer, wherein the width of said wiring means formed over said image pickup portion, is narrower than that of said control electrode so that a sufficient amount of the light incident upon said control electrode formed over said image pickup portion can be transmitted to said image pickup portion through said control electrode to cause said control electrode to function as a light receiving area, and wherein said wiring means directly disposed on said control electrode formed over said accumulating portion is disposed so as to screen said accumulating portion from the light.

Claim 21

A solid state semiconductor device comprising: (a) a semiconductor substrate including an image sensing device formed therein, said image sensing device comprising at least an image portion and an accumulating portion; (b) an insulating layer disposed on said semiconductor substrate; (c) a control electrode having a plurality of portions disposed on said insulating layer and arranged in a first predetermined pattern, said control electrode controlling image sensing operation of said image sensing device, and said control electrode being transparent so as to transmit the incident light to said image sensing device; and (d) wiring means arranged in a second predetermined pattern for short-circuiting said plurality of parts of said control electrode, said wiring means being disposed directly on said control electrode and said insulating layer, wherein the width of said wiring means formed over said image pickup portion, is narrower than that of said control electrode so that a sufficient amount of the light incident upon said control electrode formed over said image pickup portion can be transmitted to said image pickup portion through said control electrode to cause said control electrode to function as a light receiving area, and wherein said wiring means directly disposed on said control electrode formed over said accumulating portion is disposed so as to screen said accumulating portion from the light.

Claim 22

A solid state semiconductor device according to claim 18, wherein the conductivity of said wiring means is higher than that of said control electrode.

Claim 23

A solid state semiconductor device according to claim 18, wherein each of said elements includes a potential well.

Claim 24

A solid state semiconductor device according to claim 20, wherein the photoelectric conversion is performed in the semiconductor substrate under said electrode.

Claim 25

A solid state semiconductor device according to claim 21, wherein said control electrodes are translucent.

Claim 26

A solid state semiconductor device according to claim 22, wherein said control electrode include poly-silicon.

Claim 27

A solid state semiconductor device according to claim 20, wherein said wiring means are arranged at the locations apart from said potential wells.

Claim 28

A solid semiconductor device according to claim 18, wherein said control electrode has a central portion interposed between two edge portions and said wiring means short-circuits at least parts of said control electrode near the edge portions and near the central portion of said control electrode.

Claim 29

A solid state semiconductor device comprising: (a) a semiconductor substrate; (b) a plurality of photo-electric converting elements formed in said substrate; (c) an insulating layer disposed on said plurality of photo-electric converting elements; (d) a stripe-like, control electrode having a plurality of portions arranged in a first direction and disposed on said insulating layer for controlling said plurality of elements, said control electrode being transparent so as to transmit a light incident thereon to said plurality of photo-electric converting elements; and (e) a stripe-like wiring means arranged in a second direction and disposed directly on a plurality of portions of said control electrode in said photo-electric conversion portion and on said insulating layer to short-circuit said control electrode, wherein the width of said wiring means is narrower than that of said control electrode so that a sufficient amount of the light incident upon said control electrode can be transmitted to said photo-electric converting elements through said control electrode to cause said control electrode to function as a light receiving area.

Claim 30

A solid state semiconductor device comprising: (a) a semiconductor substrate; (b) a plurality of photo-electric converting elements formed in said substrate; (c) an insulating layer disposed on said plurality of photo-electric converting elements; (d) a stripe-like, control electrode having a plurality of portions arranged in a first direction and disposed on said insulating layer for controlling said plurality of elements, said control electrode being transparent so as to transmit a light incident thereon to said plurality of photo-electric converting elements; and (e) a stripe-like wiring means arranged in a second direction and disposed directly on a plurality of portions of said control electrode in said photo-electric conversion portion and on said insulating layer to short-circuit said control electrode, wherein the width of said wiring means is narrower than that of said control electrode so that a sufficient amount of the light incident upon said control electrode can be transmitted to said photo-electric converting elements through said control electrode to cause said control electrode to function as a light receiving area.

Claim 31

A solid state semiconductor device according to claim 26, wherein a conductivity of said wiring means is higher than that of said control electrode.

Claim 32

A solid state semiconductor device according to claim 26, wherein each of said elements include a potential well.

Claim 33

A solid state semiconductor device according to claim 28, wherein the photoelectric conversion is performed in the semiconductor substrate under said control electrodes.

Claim 34

A solid state semiconductor device according to claim 29, wherein said control electrodes are translucent.

Claim 35

A solid state semiconductor device according to claim 30, wherein said control electrodes include poly-silicon.

Claim 36

A solid state semiconductor device according to claim 28, wherein wiring means are arranged at the locations apart from said potential wells.

Claim 37

A solid state semiconductor device according to claim 26, wherein said wiring means short-circuits at least parts near the edge portions and near the central portions of said control electrodes.

Claim 38

A solid state semiconductor device comprising: (a) a semiconductor substrate; (b) a plurality of photo-electric converting elements formed in said substrate; (c) an insulating layer disposed on said plurality of photo-electric converting elements; (d) a control electrode disposed on said insulating layer and arranged in a first predetermined pattern having connection portions which are connected directly to plurality of portions of said photo-electric converting elements, controlling transfer of change generated in said plurality of photo-electric converting elements, and being transparent so as to transmit a light incident thereon to said plurality of photo-electric converting elements; and (e) wiring means arranged in a second predetermined pattern for compensating the signal transfer characteristics of said control electrode, said wiring means being provided directly on said control electrode over said elements and said insulating layer, and the wherein width of said wiring means is narrower than that of said control electrode so that a sufficient amount of the light incident upon said control electrode can be transmitted to said photoelectric converting elements through said control electrode to cause said control electrode to function as a light receiving area.

Claim 39

A solid state semiconductor device comprising: (a) a semiconductor substrate; (b) a plurality of photo-electric converting elements formed in said substrate; (c) an insulating layer disposed on said plurality of photo-electric converting elements; (d) a control electrode disposed on said insulating layer and arranged in a first predetermined pattern having connection portions which are connected directly to plurality of portions of said photo-electric converting elements, controlling transfer of change generated in said plurality of photo-electric converting elements, and being transparent so as to transmit a light incident thereon to said plurality of photo-electric converting elements; and (e) wiring means arranged in a second predetermined pattern for compensating the signal transfer characteristics of said control electrode, said wiring means being provided directly on said control electrode over said elements and said insulating layer, and the wherein width of said wiring means is narrower than that of said control electrode so that a sufficient amount of the light incident upon said control electrode can be transmitted to said photoelectric converting elements through said control electrode to cause said control electrode to function as a light receiving area.

Claim 40

A device according to claim 34, wherein said wiring means is provided on said control electrodes by way of evaporation deposition or the like.

Claim 41

A device according to claim 34, wherein the conductivity of said wiring means is higher than that of said control electrode.

Claim 42

A device according to claim 34, wherein said each of said elements includes a potential well.

Claim 43

A device according to claim 37, wherein the photo-electric conversion is performed in the semiconductor substrate under said control electrodes.

Claim 44

A device according to claim 38, wherein said control electrodes are transparent.

Claim 45

A device according to claim 39, wherein said control electrode are made of a material including polysilicon.

Claim 46

A device according to claim 37, wherein said wiring means are arranged at a location apart from said potential wells.

Claim 47

A device according to claim 34, wherein said wiring means short-circuits parts of said electrodes near their edges with parts of said control electrode near the central portion thereof.

Claim 48

A solid state semiconductor device wherein a change transfer portion is arranged in a photo-electric converting portion, said solid state semiconductor device comprising: (a) a semiconductor substrate; (b) a plurality of photo-electric converting elements formed in said substrate; (c) an insulating layer disposed on said plurality of photo-electric converting elements; (d) a control electrode arranged in a first predetermined pattern and disposed on said insulating layer and disposed in the photo-electric converting portion, said control electrode having a plurality of portions formed over said semiconductor substrate, controlling said plurality of photo-electric elements and being transparent so as to transmit a light incident thereon to said plurality of photo-electric converting elements; and (e) wiring means arranged in a second predetermined pattern for compensating the signal transfer characteristics of said control electrode, said wiring means being directly connected to a portion on said control electrode in the photo-electric converting portion and being disposed on said insulating layer, wherein said wiring means has a width narrower than that of the said control electrode, so that a sufficient amount of the light incident upon said control electrode can be transmitted to said photo-electric converting elements through said control electrode to cause said control electrode to function as a light receiving area.

Claim 49

A solid state semiconductor device wherein a change transfer portion is arranged in a photo-electric converting portion, said solid state semiconductor device comprising: (a) a semiconductor substrate; (b) a plurality of photo-electric converting elements formed in said substrate; (c) an insulating layer disposed on said plurality of photo-electric converting elements; (d) a control electrode arranged in a first predetermined pattern and disposed on said insulating layer and disposed in the photo-electric converting portion, said control electrode having a plurality of portions formed over said semiconductor substrate, controlling said plurality of photo-electric elements and being transparent so as to transmit a light incident thereon to said plurality of photo-electric converting elements; and (e) wiring means arranged in a second predetermined pattern for compensating the signal transfer characteristics of said control electrode, said wiring means being directly connected to a portion on said control electrode in the photo-electric converting portion and being disposed on said insulating layer, wherein said wiring means has a width narrower than that of the said control electrode, so that a sufficient amount of the light incident upon said control electrode can be transmitted to said photo-electric converting elements through said control electrode to cause said control electrode to function as a light receiving area.

Claim 50

A device according to claim 1 wherein said first predetermined pattern is arranged orthogonally to said second predetermined pattern.

Claim 51

A device according to claim 18, wherein said first predetermined pattern is arranged orthogonally to said predetermined pattern.

Claim 52

A device according to claim 34 wherein said first predetermined pattern is arranged orthogonally to said second predetermined pattern.

Claim 53

A device according to claim 43 wherein said first predetermined pattern is arranged orthogonally to said second predetermined pattern.

Claim 54

A device according to claim 26, wherein said stripe-like control electrode is arranged orthogonally to said stripe-like wiring means.