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US5064781A
Expired / Lapsed
US
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Method of fabricating integrated silicon and non-silicon semiconductor devices
Assignee: NXP USA Inc
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Filing: 1990-08-31
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Granted: 1991-11-12
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Expires: 2010-08-31
Abstract
Abstract Silicon and non-silicon semiconductor devices are fabricated on a single chip by bonding a silicon wafer to a non-silicon semiconductor substate. Portions of the non-silicon semiconductor substrate are selectively etched to expose the silicon wafer. Semiconductor devices may then be formed in the silicon wafer and on the non-silicon semiconductor substrate. Alternatively, selective epitaxial silicon may be grown where the non-silicon semiconductor substrate was removed. In another embodiment, a non-silicon semiconductor substrate having wells formed therein is bonded to a silicon wafer. The non-silicon semiconductor substrate is then polished until openings are provided to the silicon wafer. Further processing is carried out as described above.
Inventors
- 👤 Bertrand F. Cambou
- 👤 H. Ming Liaw
- 👤 Mamoru Tomozane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:42
CPC Classifications
H; H10; H10P; H10P95/00; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/08; H10P10/00; H10P10/12; H10P10/128; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
52 words
A method of fabricating integrated silicon and non-silicon semiconductor devices, comprising the steps of: providing a silicon wafer; bonding a non-silicon semiconductor substrate to the silicon wafer; thinning down the non-silicon semiconductor substrate to a desired thickness; and removing portions of the non-silicon semiconductor substrate to expose portions of the silicon wafer.
Claim 2
Independent Claim
52 words
A method of fabricating integrated silicon and non-silicon semiconductor devices, comprising the steps of: providing a silicon wafer; bonding a non-silicon semiconductor substrate to the silicon wafer; thinning down the non-silicon semiconductor substrate to a desired thickness; and removing portions of the non-silicon semiconductor substrate to expose portions of the silicon wafer.
Claim 3
Dependent Claim
23 words
The method of claim 1 further comprising forming semiconductor devices in the non-silicon semiconductor substrate after removing portions of the non-silicon semiconductor substrate.
Claim 4
Dependent Claim
14 words
The method of claim 2 wherein the silicon wafer has semiconductor devices formed therein.
Claim 5
Dependent Claim
14 words
The method of claim 2 further comprising forming semiconductor devices in the silicon wafer.
Claim 6
Dependent Claim
23 words
The method of claim 1 further comprising forming semiconductor devices in the non-silicon semiconductor substrate before removing portions of the non-silicon semiconductor substrate.
Claim 7
Dependent Claim
26 words
The method of claim 1 further comprising the step of selectively growing silicon on the silicon wafer where portions of the non-silicon semiconductor substrate were removed.
Claim 8
Dependent Claim
21 words
The method of claim 6 further comprising forming semiconductor devices in the selectively grown silicon and in the non-silicon semiconductor substrate.
Claim 9
Dependent Claim
36 words
The method of claim 1 wherein an intermediate layer is positioned between the silicon wafer and the non-silicon semiconductor substrate and further comprising removing portions of the intermediate layer to expose portions of the silicon wafer.
Claim 10
Dependent Claim
15 words
The method of claim 1 wherein the non-silicon semiconductor substrate is a gallium arsenide substrate.
Claim 11
Dependent Claim
39 words
The method of claim 1 wherein the non-silicon semiconductor substrate has wells formed on the surface bonded to the silicon wafer and wherein the non-silicon semiconductor substrate is thinned at least to the wells, to expose the silicon wafer.
Claim 12
Independent Claim
58 words
A method of making an integrated silicon and non-silicon device, comprising the steps of providing a silicon wafer; bonding a non-silicon semiconductor substrate to the silicon wafer, wherein the non-silicon semiconductor substrate has wells formed therein on the surface which is bonded to the silicon wafer; and thinning down the non-silicon semiconductor substrate to at least the wells.
Claim 13
Independent Claim
58 words
A method of making an integrated silicon and non-silicon device, comprising the steps of providing a silicon wafer; bonding a non-silicon semiconductor substrate to the silicon wafer, wherein the non-silicon semiconductor substrate has wells formed therein on the surface which is bonded to the silicon wafer; and thinning down the non-silicon semiconductor substrate to at least the wells.
Claim 14
Dependent Claim
18 words
The method of claim 11 further comprising the step of selectively growing silicon on the exposed silicon wafer.
Claim 15
Dependent Claim
21 words
The method of claim 12 further comprising forming semiconductor devices in the selectively grown silicon and in the non-silicon semiconductor substrate.
Claim 16
Dependent Claim
36 words
The method of claim 11 wherein an intermediate layer is positioned between the silicon wafer and the non-silicon semiconductor substrate and further comprising removing portions of the intermediate layer to expos portions of the silicon wafer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-11 | 1995-05-13 | 1995-11-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-11 | 1999-05-13 | 1999-11-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-11 | 2003-05-13 | 2003-11-12 | $7700.00 | Window Closed / Lapsed |