Method of forming bipolar transistor having closely spaced device regions

Claim 1

A method of forming a bipolar junction transistor in a region of a semiconductor structure comprising the steps of: a) implanting an active base in the region of the semiconductor structure; b) simultaneously forming an emitter region on a surface of the region over the active base and forming a collector region on the surface of semiconductor structure; c) implanting dopant into the surface portions of the region of the semiconductor, forming an inactive base region extending from the emitter region to the collector region; d) simultaneously forming sidewall spacers adjacent the emitter region and collector region; and e) forming electrically isolated silicide contacts over the emitter region, the collector region, and the inactive base region, the silicide contact over the inactive base region extending from the sidewall spacer adjacent the emitter region to the sidewall spacer adjacent the collector region.

Claim 2

A method of forming a bipolar junction transistor in a region of a semiconductor structure comprising the steps of: a) implanting an active base in the region of the semiconductor structure; b) simultaneously forming an emitter region on a surface of the region over the active base and forming a collector region on the surface of semiconductor structure; c) implanting dopant into the surface portions of the region of the semiconductor, forming an inactive base region extending from the emitter region to the collector region; d) simultaneously forming sidewall spacers adjacent the emitter region and collector region; and e) forming electrically isolated silicide contacts over the emitter region, the collector region, and the inactive base region, the silicide contact over the inactive base region extending from the sidewall spacer adjacent the emitter region to the sidewall spacer adjacent the collector region.

Claim 11

A method of forming bipolar junction transistor in a region of a semiconductor structure comprising the steps of: a) implanting an active base region in the region of the semiconductor structure; b) simultaneously forming an emitter on a surface of the region over the active base and forming a collector region on the surface of the semiconductor structure; c) implanting dopant into a continuous region comprising the surface portions of the region of the semiconductor and a portion of the collector region; d) forming sidewall spacers adjacent the emitter and collector regions; and e) forming electrically isolated, ohmic, silicide contacts on the emitter region, the collector region and the doped surface portions, the silicide contact over the doped surface portion extending from the sidewall spacer adjacent the emitter to the sidewall spacer adjacent the collector.

Claim 12

A method of forming bipolar junction transistor in a region of a semiconductor structure comprising the steps of: a) implanting an active base region in the region of the semiconductor structure; b) simultaneously forming an emitter on a surface of the region over the active base and forming a collector region on the surface of the semiconductor structure; c) implanting dopant into a continuous region comprising the surface portions of the region of the semiconductor and a portion of the collector region; d) forming sidewall spacers adjacent the emitter and collector regions; and e) forming electrically isolated, ohmic, silicide contacts on the emitter region, the collector region and the doped surface portions, the silicide contact over the doped surface portion extending from the sidewall spacer adjacent the emitter to the sidewall spacer adjacent the collector.