US4746623A
Expired / Lapsed
US
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Method of making bipolar semiconductor device with wall spacer
Assignee: Signetics Corp
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Filing: 1986-01-29
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Granted: 1988-05-24
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Expires: 2006-01-29
Abstract
Abstract A method for fabricating a semiconductor device in which the base resistance is minimized to increase the speed of operation of the device. This is accomplished because the device made by the method makes it possible to form the base and emitter contacts next to each other laterally but spaced vertically.
Inventors
- 👤 Richard H. Lane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:01
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/051; H10D62/00; H10D62/10; H10D62/17; H10D62/177; H10D64/00; H10D64/20; H10D64/27; H10D64/281; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
200 words
A method of fabricating a semiconductor device on a semiconductor substrate of a first conductivity type including providing a region of a second conductivity type on said substrate; growing an epitaxial layer of said second conductivity type on said region and separating said layer into isolated zones; forming a mesa on a selected zone; covering a portion of said selected zone adjacent said mesa with insulating material; first doping said mesa by ion implantation to change its conductivity to said first type, said doping extending below said mesa and into said portion of said selected zone adjacent said mesa and under said insulating material a predetermined distance; further doping said mesa by ion implantation to change its conductivity back to said second type, said further doping extending under said insulating material a distance less than said predetermined distance; covering said mesa and a portion of said insulating material with a conducting layer; and etching said conducting layer and said insulating material to expose part of said selected zone of said first conductivity type while leaving insulating material adjacent said mesa and between said conducting layer and said portion of said selected zone of said first conductivity type adjacent said mesa.
Claim 2
Independent Claim
200 words
A method of fabricating a semiconductor device on a semiconductor substrate of a first conductivity type including providing a region of a second conductivity type on said substrate; growing an epitaxial layer of said second conductivity type on said region and separating said layer into isolated zones; forming a mesa on a selected zone; covering a portion of said selected zone adjacent said mesa with insulating material; first doping said mesa by ion implantation to change its conductivity to said first type, said doping extending below said mesa and into said portion of said selected zone adjacent said mesa and under said insulating material a predetermined distance; further doping said mesa by ion implantation to change its conductivity back to said second type, said further doping extending under said insulating material a distance less than said predetermined distance; covering said mesa and a portion of said insulating material with a conducting layer; and etching said conducting layer and said insulating material to expose part of said selected zone of said first conductivity type while leaving insulating material adjacent said mesa and between said conducting layer and said portion of said selected zone of said first conductivity type adjacent said mesa.
Claim 3
Dependent Claim
34 words
A method according to claim 1, wherein said mesa is masked during said first doping step which enables said first doping step to proceed more rapidly in said adjacent zones than in said mesa.
Claim 4
Dependent Claim
25 words
A method according to claim 2, wherein the masking over said mesa is removed and an annealing step is performed before said further doping step.
Claim 5
Dependent Claim
18 words
A method according to claim 2, wherein the masking over said mesa is a layer of silicon nitride.
Claim 6
Dependent Claim
13 words
A method according to claim 2, wherein said insulating material is silicon dioxide.
Claim 7
Dependent Claim
17 words
A method according to claim 5, wherein said isolated zones are separated by regions of silicon dioxide.
Claim 8
Dependent Claim
16 words
A method according to claim 6, wherein said first doping includes an ion implantation of boron.
Claim 9
Dependent Claim
16 words
A method according to claim 7, wherein said further doping includes an ion implantation of arsenic.
Claim 10
Dependent Claim
17 words
A method according to claim 8, wherein a polysilicon layer is formed on top of said mesa.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-24 | 1991-11-23 | 1992-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-24 | 1995-11-23 | 1996-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-24 | 1999-11-23 | 2000-05-24 | $7700.00 | Window Closed / Lapsed |