JPS5233484A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacturing process of semiconductor device
Assignee: Hitachi Ltd
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Filing: 1975-09-10
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Granted: —
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Expires: 1995-09-10
Abstract
Abstract PURPOSE:To reduce more the limit of dimishing the emitter domain by etching, and to prevent the decline of the current amplification factor of the emitter caused by the reduction of the size of emitter.
Inventors
- 👤 Hisayuki Higuchi
- 👤 Keijiro Uehara
- 👤 Takahide Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-29 21:20
CPC Classifications
—
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