Semiconductor integrated circuit having substrate potential detecting circuit commonly used

Claim 2

A semiconductor integrated circuit comprising: means for generating a substrate potential, connected to a substrate and set operative on at least a certain operation voltage level; detection means including a first detection means for outputting a first detection signal upon detecting that the substrate potential generated by said substrate potential generating means has become lower than the operation voltage level by more than a preset amount, and including a second detection means for outputting a second detection signal upon detecting that the substrate potential has reached a preset level which is set slightly lower than the operation voltage level, said first and second detection means each including a common reference circuit; and means connected to said detection means, for charging the substrate upon receiving the first detection signal, and interrupting the charging operation upon receiving the second detection signal.

Claim 3

A semiconductor integrated circuit according to claim 1, wherein said detection means includes a first p-channel transistor having a gate connected to a ground potential node, a first n-channel transistor having a gate and a drain connected together, a second p-channel transistor having a gate and a drain connected together, and a second n-channel transistor having a gate connected to a power source node, said first p-channel transistor, said first n-channel transistor, said second p-channel transistor and said second n-channel transistor being series-connected between said power source node and said substrate, and further includes a third p-channel transistor having a gate connected to the drain of said first p-channel transistor and a source connected to said power source node, a fourth p-channel transistor having a gate connected to a ground potential node, and a third n-channel transistor having a gate connected to the drain of said first p-channel transistor and a source connected to said ground potential node, said third n-channel transistor, said third p-channel transistor and said fourth p-channel transistor being series-connected between said power source node and said ground potential node.

Claim 4

A semiconductor integrated circuit according to claim 2, wherein the size of said first n-channel transistor and said second p-channel transistor is set to be larger than that of said first p-channel transistor and said second n-channel transistor.

Claim 5

A semiconductor integrated circuit according to claim 2, wherein said charging means includes means for limiting the degree of charging the substrate.

Claim 6

A semiconductor integrated circuit according to claim 4, wherein said charging means includes a fifth p-channel transistor connected in series with said limiting means between said ground potential node and said substrate, to leak the substrate potential.

Claim 7

A semiconductor integrated circuit according to claim 1, wherein said charging means includes a first p-channel transistor, a second p-channel transistor having a gate connected to a ground potential node, and a first n-channel transistor, said first p-channel transistor, said second p-channel transistor, and said first n-channel transistor being series-connected between a power source node and said ground potential node, and further includes a third p-channel transistor acting as a gate transistor, and a second n-channel transistor having a gate connected to said power source node, said third p-channel transistor and said second n-channel transistor being series-connected between said power source node and said substrate, and the drain of said first n-channel transistor being connected to an input terminal of an inverter, and the gate of said third p-channel transistor being connected to an output terminal of said inverter.

Claim 8

A semiconductor integrated circuit according to claim 1, wherein said detection means includes a first p-channel transistor having a gate connected to a ground potential node, a second p-channel transistor having a gate and a drain connected together, and a first n-channel transistor having a gate connected to a power source node, said transistor first p-channel transistor, said second p-channel transistor, and said first n-channel transistor being series-connected between said power source node and said substrate, and further includes a third p-channel transistor having a gate connected to the drain of said first p-channel transistor and a source connected to said power source node, a fourth p-channel transistor having a gate connected to said ground potential node, and a second n-channel transistor having a gate connected to the drain of said first p-channel transistor and a source connected to said ground potential node, said third p-channel transistor, said second n-channel transistor and said fourth p-channel transistor transistors being series-connected between said power source node and said ground potential node.

Claim 9

A semiconductor integrated circuit according to claim 2, further comprising a diode connected to the source of said first n-channel transistor.

Claim 10

A semiconductor integrated circuit according to claim 1, further comprising means connected to said substrate potential generating means and said charging means, for interrupting the charging operation by said charging means while said substrate potential generating means is operating.

Claim 11

A semiconductor integrated circuit according to claim 9, wherein said interrupting means includes an inverter circuit.

Claim 12

A semiconductor integrated circuit according to claim 6, further comprising a fourth p-channel transistor having a drain connected to the source of said second n-channel transistor.

Claim 13

A semiconductor integrated circuit according to claim 7, further comprising a diode connected to the drain of said first p-channel transistor.

Claim 14

A semiconductor integrated circuit comprising: means for generating a substrate potential, connected to a substrate and set operative on at least a certain operation voltage level; detection means including a first detection means for outputting a first detection signal upon detecting that the substrate potential generated by said substrate potential generating means has reached a first detection level that is lower than the operation voltage by more than a preset amount, and including a second detection means for outputting a second detection signal upon detecting that the substrate potential has reached a second detection level which is set slightly lower than the operation voltage level, said first and second detection means each including a common reference circuit; and means, connected to said detection means, for charging the substrate upon receiving the first detection signal, and interrupting the charging operation upon receiving the second detection signal, wherein the difference between the first detection level and second detection level is generated using the difference among the threshold voltages of a plurality of transistor elements.

Claim 15

A semiconductor integrated circuit comprising: means for generating a substrate potential, connected to a substrate and set operative on at least a certain operation voltage level; detection means including a first detection means for outputting a first detection signal upon detecting that the substrate potential generated by said substrate potential generating means has reached a first detection level that is lower than the operation voltage by more than a preset amount, and including a second detection means for outputting a second detection signal upon detecting that the substrate potential has reached a second detection level which is set slightly lower than the operation voltage level, said first and second detection means each including a common reference circuit; and means, connected to said detection means, for charging the substrate upon receiving the first detection signal, and interrupting the charging operation upon receiving the second detection signal, wherein the difference between the first detection level and second detection level is generated using the difference among the threshold voltages of a plurality of transistor elements.

Claim 16

A semiconductor integrated circuit according to claim 13, wherein said detection means includes a first p-channel transistor having a gate connected to a ground potential node, a first n-channel transistor having a gate and a drain connected together, a second p-channel transistor having a gate and a drain connected together, and a second n-channel transistor having a gate connected to a power source node, said first p-channel transistor, said first n-channel transistor, said second p-channel transistor and said second n-channel transistor being series-connected between said power source node and said substrate, and further includes a third p-channel transistor having a gate connected to the drain of said first p-channel transistor and a source connected to said power source node, a fourth p-channel transistor having a gate connected to a ground potential node, and a third n-channel transistor having a gate connected to the drain of said first p-channel transistor and a source connected to said ground potential node, said third n-channel transistor, said third p-channel transistor and said fourth p-channel transistor being series-connected between said power source node and said ground potential node.

Claim 17

A semiconductor integrated circuit according to claim 14, wherein the size of said first n-channel transistor and said second p-channel transistor is set to be larger than that of said first p-channel transistor and said second n-channel transistor.

Claim 18

A semiconductor integrated circuit according to claim 14, wherein said charging means includes means for limiting the degree of charging the substrate.

Claim 19

A semiconductor integrated circuit according to claim 16, wherein said charging means includes a fifth p-channel transistor connected in series with said limiting means between said ground potential node and said substrate, to leak the substrate potential.

Claim 20

A semiconductor integrated circuit according to claim 13, wherein said charging means includes a first p-channel transistor, a second p-channel transistor having a gate connected to a ground potential node, and a first n-channel transistor, said first p-channel transistor, said second p-channel transistor, and said first n-channel transistor being series-connected between a power source node and said ground potential node, and further includes a third p-channel transistor acting as a gate transistor, and a second n-channel transistor having a gate connected to said power source node, said third p-channel transistor and said second n-channel transistor being series-connected between said power source node and said substrate, and the drain of said first n-channel transistor being connected to an input terminal of an inverter, and the gate of said third p-channel transistor being connected to an output terminal of said inverter.

Claim 21

A semiconductor integrated circuit according to claim 13, wherein said detection means includes a first p-channel transistor having a gate connected to a ground potential node, a second p-channel transistor having a gate and a drain connected together, and a first n-channel transistor having a gate connected to a power source node, said first p-channel transistor, said second p-channel transistor, and said first n-channel transistor being series-connected between said power source node and said substrate, and further includes a third p-channel transistor having a gate connected to the drain of said first p-channel transistor and a source connected to said power source node, a fourth p-channel transistor having a gate connected to said ground potential node, and a second n-channel transistor having a gate connected to the drain of said first p-channel transistor and a source connected to said ground potential node, said third p-channel transistor, said second n-channel transistor and said fourth p-channel transistor being series-connected between said power source node and said ground potential node.

Claim 22

A semiconductor integrated circuit according to claim 14, further comprising a diode connected to the source of said first n-channel transistor.

Claim 23

A semiconductor integrated circuit according to claim 13, further comprising means connected to said substrate potential generating means and said charging means, for interrupting the charging operation by said charging means while said substrate potential generating means is operating.

Claim 24

A semiconductor integrated circuit according to claim 21, wherein said interrupting means includes an inverter circuit.

Claim 25

A semiconductor integrated circuit according to claim 18, further comprising a fourth p-channel transistor having a drain connected to the source of said second n-channel transistor.

Claim 26

A semiconductor integrated circuit according to claim 19, further comprising a diode connected to the drain of said first p-channel transistor.