Integrated circuit of the complementary technique having a substrate bias generator

Abstract

Abstract This substrate bias generator (16) applies a negative (positive) substrate bias voltage to the p(n) substrate (1) into which n(p) troughs (2) are inserted. The source regions (3) of the n(p) channel FETs arranged in the substrate are connected to earth potential. To avoid "latch-up" effects, the output (17) of the substrate bias generator (16) is connected via an electronic switch (S1) to a circuit point (8) connected to earth potential, the switch being driven via the said output (17). <IMAGE>

Inventors

• 👤 Dezsö Dipl.-Phys. Takàcs
• 👤 Josef Dr.-Ing. Winnerl

Bibliographic Details