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US5048035A
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Semiconductor light emitting device
Assignee: Toshiba Corp
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Filing: 1990-05-29
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Granted: 1991-09-10
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Expires: 2010-05-29
Abstract
Abstract A semiconductor light emitting device, especially, a light emitting diode includes a compound semiconductor substrate of a first conductivity type, an InGaAlP layer formed on the substrate and having a light emitting region, a GaAlAs layer of a second conductivity type formed on the InGaAlP layer and having a larger band gap than that of the InGaAlP layer, and an electrode formed on a part of the GaAlAs layer. The light emitting diode emits light from a surface at the electrode side except for the electrode. A current from the electrode is widely spread by the GaAlAs layer to widely spread a light emitting region.
Inventors
- 👤 Hideto Sugawara
- 👤 Masayuki Ishikawa
- 👤 Yoshihiro Kokubun
- 👤 Yukie Nishikawa
- 👤 Shigeya Naritsuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:30
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/831; B; B82; B82Y; B82Y20/00; H10H20/81; H10H20/811; H10H20/816; H10H20/8162; H10H20/822; H10H20/824; H10H20/8316
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
80 words
In a semiconductor light emitting device comprising: a compound semiconductor substrate of a first conductivity type; an InGaAlP layer formed on said substrate and having a light emitting region; a GaAlAs layer of a second conductivity type formed on said InGaAlP layer and having a larger band gap than that of said InGaAlP layer; and an electrode formed on a part of said GaAlAs layer, wherein light is emitted from a surface at the electrode side except for said electrode.
Claim 2
Dependent Claim
80 words
In a semiconductor light emitting device comprising: a compound semiconductor substrate of a first conductivity type; an InGaAlP layer formed on said substrate and having a light emitting region; a GaAlAs layer of a second conductivity type formed on said InGaAlP layer and having a larger band gap than that of said InGaAlP layer; and an electrode formed on a part of said GaAlAs layer, wherein light is emitted from a surface at the electrode side except for said electrode.
Claim 3
Dependent Claim
18 words
A device according to claim 1, wherein said GaAlAs layer has a composition of Ga l-p AlpAs (0.45≦p≦1).
Claim 4
Dependent Claim
29 words
A device according to claim 1, wherein said InGaAlP layer is an active layer having a composition of In 0 .5 (Ga l-y Al y ) 0 .5 P(0≦y≦1).
Claim 5
Dependent Claim
82 words
A device according to claim 3, wherein a lower clad layer of the first conductivity type having a composition of In 0 .5 (Ga l-x Al.sub.×) 0 .5 P(0≦x×≦1) is formed between said substrate and said active layer, and an upper clad layer of the second conductivity type having a composition of In 0 .5 (Ga l-x Al z ) 0 .5 P (0≦z≦1) is formed between said active layer and said InGaAlP layer, x, y, and z satisfying y≦x and y≦z.
Claim 6
Dependent Claim
22 words
A device according to claim 4, wherein said GaAlAs layer has a larger layer thickness than that of said upper clad layer.
Claim 7
Dependent Claim
13 words
A device according to claim 1, wherein said electrode consists essentially of AuZn.
Claim 8
Dependent Claim
28 words
A device according to claim 1, wherein a contact layer consisting essentially of GaAs of the second conductivity type is formed between said GaAlAs layer and said electrode.
Claim 9
Dependent Claim
124 words
In a semiconductor light emitting device comprising: a compound semiconductor substrate of a first conductivity type; a lower clad type layer formed on said substrate and consisting essentially of InGaAlP of the first conductivity type: an active layer formed on said lower clad layer and consisting essentially of InGaAlP; an upper clad layer formed on said active layer and consisting essentially of InGaAlP of a second conductivity type: a GaAlAs layer of a second conductivity type formed on said upper clad layer and having a larger band gap than that of said InGaAlP layer constituting said active layer and; an electrode formed on a part of said GaAlAs layer wherein light is emitted from a surface at said electrode side except for said electrode.
Claim 10
Dependent Claim
124 words
In a semiconductor light emitting device comprising: a compound semiconductor substrate of a first conductivity type; a lower clad type layer formed on said substrate and consisting essentially of InGaAlP of the first conductivity type: an active layer formed on said lower clad layer and consisting essentially of InGaAlP; an upper clad layer formed on said active layer and consisting essentially of InGaAlP of a second conductivity type: a GaAlAs layer of a second conductivity type formed on said upper clad layer and having a larger band gap than that of said InGaAlP layer constituting said active layer and; an electrode formed on a part of said GaAlAs layer wherein light is emitted from a surface at said electrode side except for said electrode.
Claim 11
Dependent Claim
22 words
A device according to claim 8, wherein said GaAlAs layer has a larger layer thickness than that of said upper clad layer.
Claim 12
Dependent Claim
20 words
A device according to claim 8, wherein said GaAlAs layer has a composition of Ga l-p Al p As (0.45≦1).
Claim 13
Dependent Claim
26 words
A device according to claim 8, wherein said active layer has a composition of In 0 .5 (Ga l-y Al y ) 0 .5 P (0≦y1).
Claim 14
Dependent Claim
13 words
A device according to claim 8, wherein said electrode consists essentially of AuZn.
Claim 15
Dependent Claim
28 words
A device according to claim 8, wherein a contact layer consisting essentially of GaAs of the second conductivity type is formed between said GaAlAs layer and said electrode.
Claim 16
Dependent Claim
14 words
A device according to claim 8, wherein said device is a light emitting diode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-09-09 | 1995-03-11 | 1995-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-09 | 1999-03-11 | 1999-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-09 | 2003-03-11 | 2003-09-10 | $7700.00 | Window Closed / Lapsed |