US4494237A
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Shortwave semiconductor laser
Assignee: Thales SA
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Filing: 1982-06-16
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Granted: 1985-01-15
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Expires: 2002-06-16
Abstract
Abstract A laser diode having an active layer which has a composition: Ga.sub.x In.sub.1-x P with: 0.51≦x≦0.53 corresponding to a point of the straight line of the quaternary diagram GaInAsP which satisfies the condition of compatability of the crystal lattice parameter with that of a GaAs substrate. The confinement layers of the laser diode have a composition corresponding to a point of the straight line of the adjacent quaternary diagram GaAlInP which satisfies the condition of compatability of the crystal lattice parameter with that of the GaAs substrate, namely in respect of that point of said straight line which is located at the most favorable end of the line: In.sub.z Al.sub.1-z P with: 0.45≦z≦0.49.
Inventors
- 👤 Marie-Antoinette Di Forte Poisson
- 👤 Jean-Pierre Hirtz
- 👤 Jean-Pascal Duchemin
- 👤 Baudouin DE Cremoux
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 03:44
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; H10H20/822; H10H20/824
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
137 words
A semiconductor device comprising: a GaAs substrate of a predetermined conductivity type and at least the following epitaxial layers: a first confinement layer of the same conductivity type as the substrate, an active layer and a second confinement layer of opposite conductivity type, the confinement layers being constituted by materials having a wider forbidden band than that of the active layer, the material constituting the active layer being formed of an alloy corresponding to the formula: Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y where x has a value between zero and one, y has a zero value or a value between zero and one, x and y being determined with respect to each other by the relation varified to within 1%: y=(0.42x-0.22)/(0.01x+0.19) and the confinement layers being formed of an alloy corresponding to the formula: In.sub.z Al.sub.1-z P with: 0.45≦z≦0.49.
Claim 2
Dependent Claim
137 words
A semiconductor device comprising: a GaAs substrate of a predetermined conductivity type and at least the following epitaxial layers: a first confinement layer of the same conductivity type as the substrate, an active layer and a second confinement layer of opposite conductivity type, the confinement layers being constituted by materials having a wider forbidden band than that of the active layer, the material constituting the active layer being formed of an alloy corresponding to the formula: Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y where x has a value between zero and one, y has a zero value or a value between zero and one, x and y being determined with respect to each other by the relation varified to within 1%: y=(0.42x-0.22)/(0.01x+0.19) and the confinement layers being formed of an alloy corresponding to the formula: In.sub.z Al.sub.1-z P with: 0.45≦z≦0.49.
Claim 3
Dependent Claim
138 words
A semiconductor device comprising: a GaAs substrate of a predetermined conductivity type and at least the following epitaxial layers: a first confinement layer of the same conductivity type as the substrate, an active layer and a second confinement layer of opposite conductivity type, the confinement layers being constituted by materials having a wider forbidden band than that of the active layer, wherein the material constituting the active layer is formed of an alloy corresponding to the formula: Ga.sub.x Al.sub.z In.sub.1-x-z P where x has a value between zero and one, z has a zero value or a value between zero and one, x and z being determined with respect to each other by the relation verified to within 1%: z=(0.22-0.42x)/0.41+5.04x) and the confinement layers are formed of an alloy corresponding to the formula: In.sub.z Al.sub.1-z P with: 0.45≦z≦0.49.
Claim 4
Dependent Claim
138 words
A semiconductor device comprising: a GaAs substrate of a predetermined conductivity type and at least the following epitaxial layers: a first confinement layer of the same conductivity type as the substrate, an active layer and a second confinement layer of opposite conductivity type, the confinement layers being constituted by materials having a wider forbidden band than that of the active layer, wherein the material constituting the active layer is formed of an alloy corresponding to the formula: Ga.sub.x Al.sub.z In.sub.1-x-z P where x has a value between zero and one, z has a zero value or a value between zero and one, x and z being determined with respect to each other by the relation verified to within 1%: z=(0.22-0.42x)/0.41+5.04x) and the confinement layers are formed of an alloy corresponding to the formula: In.sub.z Al.sub.1-z P with: 0.45≦z≦0.49.
Claim 5
Dependent Claim
25 words
A device according to claim 1 or claim 2, wherein the material constituting the active layer has the following composition: Ga.sub.x In.sub.1-x P with: 0.51≦x≦0.53.
Claim 6
Dependent Claim
141 words
In a shortwave semiconductor laser, the improvement comprising: a GaAs substrate of a predetermined conductivity type and at least the following epitaxial layers: a first confinement layer of the same conductivity type as the substrate, an active layer and a second confinement layer of opposite conductivity type, the confinement layers being constituted by materials having a wider forbidden band than that of the active layer, the material constituting the active layer being formed of an alloy corresponding to the formula: Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y where x has a value between zero and one, y has a zero value or a value between zero and one, x and y being determined with respect to each other by the relation verified to within 1%: y=(0.42x-0.22)/(0.01x+0.19) and the confinement layers being formed of an alloy corresponding to the formula: In.sub.z Al.sub.1-z P with: 0.45≦z≦0.49.
Claim 7
Dependent Claim
141 words
In a shortwave semiconductor laser, the improvement comprising: a GaAs substrate of a predetermined conductivity type and at least the following epitaxial layers: a first confinement layer of the same conductivity type as the substrate, an active layer and a second confinement layer of opposite conductivity type, the confinement layers being constituted by materials having a wider forbidden band than that of the active layer, the material constituting the active layer being formed of an alloy corresponding to the formula: Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y where x has a value between zero and one, y has a zero value or a value between zero and one, x and y being determined with respect to each other by the relation verified to within 1%: y=(0.42x-0.22)/(0.01x+0.19) and the confinement layers being formed of an alloy corresponding to the formula: In.sub.z Al.sub.1-z P with: 0.45≦z≦0.49.
Claim 8
Dependent Claim
142 words
In a shortwave semiconductor laser, the improvement comprising: a GaAs substrate of a predetermined conductivity type and at least the following epitaxial layers: a first confinement layer of the same conductivity type as the substrate, an active layer and a second confinement layer of opposite conductivity type, the confinement layers being constituted by materials having a wider forbidden band than that of the active layer, wherein the material constituting the active layer is formed of an alloy corresponding to the formula: Ga.sub.x Al.sub.z In.sub.1-x-z P where x has a value between zero and one, z has a zero value or a value between zero and one, x and z being determined with respect to each other by the relation verified to within 1%: z=(0.22-0.42x)/(0.41+5.04x) and the confinement layers are formed of an alloy corresponding to the formula: In.sub.z Al.sub.1-z P with: 0.45≦z≦0.49.
Claim 9
Dependent Claim
142 words
In a shortwave semiconductor laser, the improvement comprising: a GaAs substrate of a predetermined conductivity type and at least the following epitaxial layers: a first confinement layer of the same conductivity type as the substrate, an active layer and a second confinement layer of opposite conductivity type, the confinement layers being constituted by materials having a wider forbidden band than that of the active layer, wherein the material constituting the active layer is formed of an alloy corresponding to the formula: Ga.sub.x Al.sub.z In.sub.1-x-z P where x has a value between zero and one, z has a zero value or a value between zero and one, x and z being determined with respect to each other by the relation verified to within 1%: z=(0.22-0.42x)/(0.41+5.04x) and the confinement layers are formed of an alloy corresponding to the formula: In.sub.z Al.sub.1-z P with: 0.45≦z≦0.49.
Claim 10
Dependent Claim
25 words
A laser according to claim 4 or claim 5, wherein the material constituting the active layer has the following composition: Ga.sub.x IN.sub.1-x P with: 0.51≦x≦0.53.
References Cited (Backward Citations)
DE2001870A1
Cited
EP0038981A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-15 | 1988-07-16 | 1989-01-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-15 | 1992-07-16 | 1993-01-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-15 | 1996-07-16 | 1997-01-15 | $7700.00 | Window Closed / Lapsed |