Semiconductor laser device

Abstract

Abstract PURPOSE:To obtain a semiconductor laser device of excellent characteristics wherein the series resistance of element can be reduced without increasing the carrier density of InGaAlP clad layer, the operation voltage is low, and thermal characteristics are superior, by providing a low refractive index layer whose electrical resistivity and thermal resistivity are lower than those of the clad layer material. CONSTITUTION:As clad layers 12 and 14 of double hetero junction type semiconductor laser device, InGaAlP is used. On the opposite side to an active layer 13 of at least one of the clad layers, a low refractive index layer 15 composed of a compound semiconductor is formed, which is transparent to laser oscillation wavelength, whose refractive index is lower than that of the active layer 13 and whose electrical resistivity and thermal resistivity are smaller than those of the clad layer material. For example, on N-GaAs substrate 11 the following layers are grown and formed in order: N- In0.5(Ga1-xAlx)0.5P clad layer 12, In0.5(Ga1-x',Alx')0.5P active layer 13, P-In0.5(Ga1-xAlx)0.5 P clad layer 14, P-Ga1-yAlyAs low refractive index layer 15 and P-GaAs electrode contact layer 16. An insulating film 17 of SiO2 and the like is formed thereon, which is eliminated in stripe form. Next a P-side electrode 18 is formed on the upper surface of insulating film 17 and contact layer 16, and an N-side electrode 19 is formed on the lower surface of a substrate 11.

Inventors

• 👤 Masayuki Ishikawa
• 👤 正行 石川
• 👤 Yasuo Oba
• 👤 康夫 大場
• 👤 Motoyuki Yamamoto
• 👤 山本　基幸

Bibliographic Details