Method for coating substrates with silicon based compounds

Claim 1

A method of depositing a thin film of silicon based compound on a substrate within an evacuated chamber, said method comprising the steps of: (a) providing an elongated, cylindrical tubular member carrying a silicon sputtering material on an outer surface thereof; (b) establishing within said tubular member a magnetic field to provide an erosion zone on the sputtering material extending substantially the entire length of the tubular member and circumferentially along a relatively narrow region thereof; (c) causing a reactive gas to flow into said vacuum chamber; (d) causing an inert gas to flow into said vacuum chamber; (e) rotating said tubular member about its longitudinal axis to bring different portions of the sputtering material into sputtering position opposite the magnetic field; (f) applying d.c. potential to the cylindrical member to cause sputtering; and (g) positioning said substrate opposite said erosion zone, whereby a thin film of a silicon based compound is deposited on the substrate.

Claim 2

A method of depositing a thin film of silicon based compound on a substrate within an evacuated chamber, said method comprising the steps of: (a) providing an elongated, cylindrical tubular member carrying a silicon sputtering material on an outer surface thereof; (b) establishing within said tubular member a magnetic field to provide an erosion zone on the sputtering material extending substantially the entire length of the tubular member and circumferentially along a relatively narrow region thereof; (c) causing a reactive gas to flow into said vacuum chamber; (d) causing an inert gas to flow into said vacuum chamber; (e) rotating said tubular member about its longitudinal axis to bring different portions of the sputtering material into sputtering position opposite the magnetic field; (f) applying d.c. potential to the cylindrical member to cause sputtering; and (g) positioning said substrate opposite said erosion zone, whereby a thin film of a silicon based compound is deposited on the substrate.

Claim 4

The method of either of claims 1 or 2 wherein the step of causing a reactive gas to flow into the chamber includes causing an oxygen containing gas to flow thereinto, whereby the deposited film is a silicon oxide.

Claim 5

The method of either of claims 1 or 2 wherein the step of causing a reactive gas to flow into the chamber includes causing a nitrogen containing gas to flow thereinto, whereby the deposited film is a silicon nitride.

Claim 6

The method of either of claims 1 or 2 wherein the step of causing a reactive gas to flow into the chamber includes causing a carbon containing gas to flow thereinto, whereby the deposited film is a silicon carbide.

Claim 7

The method of either of claims 1 or 2, wherein the step of causing an inert gas to flow into the chamber includes causing argon to flow thereinto.

Claim 8

The method of either of claims 1 or 2 wherein said substrate is characterized by being vacuum compatible.

Claim 9

The method of either of claims 1 or 2 wherein said substrate includes any of a glass, plastic or metal.

Claim 10

The method of either of claims 1 or 2, wherein the step of providing a cylindrical member includes providing said outer surface with sputtering material consisting of at least 90% silicon.

Claim 11

The method of either of claims 1 or 2, wherein the step of providing a cylindrical member includes providing a member where the sputtering material is doped with one or more substances selected from the group consisting of aluminum, boron, antimony, phosphorus, and arsenic.

Claim 12

A method of depositing a silicon dioxide film on a substrate that is positioned within an evacuated chamber, said method comprising the steps of: (a) providing an elongated, cylindrical tubular member carrying a silicon sputtering material on an outer surface thereof; (b) establishing within said tubular member a magnetic field to provide an erosion zone on the sputtering material extending substantially the entire length of the tubular member and circumferentially along a relatively narrow region thereof; (c) causing an oxygen containing gas to flow into said vacuum chamber; (d) causing an inert gas to flow into said vacuum chamber; (e) rotating said tubular member about its longitudinal axis to bring different portions of the sputtering material into sputtering position opposite the magnetic field; (f) applying d.c. potential to the cylindrical member to cause sputtering; and (g) positioning said substrate opposite said erosion zone, whereby a thin silicon dioxide film is deposited on the substrate.

Claim 13

A method of depositing a silicon dioxide film on a substrate that is positioned within an evacuated chamber, said method comprising the steps of: (a) providing an elongated, cylindrical tubular member carrying a silicon sputtering material on an outer surface thereof; (b) establishing within said tubular member a magnetic field to provide an erosion zone on the sputtering material extending substantially the entire length of the tubular member and circumferentially along a relatively narrow region thereof; (c) causing an oxygen containing gas to flow into said vacuum chamber; (d) causing an inert gas to flow into said vacuum chamber; (e) rotating said tubular member about its longitudinal axis to bring different portions of the sputtering material into sputtering position opposite the magnetic field; (f) applying d.c. potential to the cylindrical member to cause sputtering; and (g) positioning said substrate opposite said erosion zone, whereby a thin silicon dioxide film is deposited on the substrate.