EP0165413B1
Expired / Lapsed
EP
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Process for the deposition of silicon compound optical layers by cathodic sputtering, and use of a formed silicon body as a target for this process
Assignee: Cessione peter Wirz
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Filing: 1985-04-26
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Granted: 1988-11-17
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Expires: 2005-04-26
Abstract
Abstract 1. Process for the deposit of optical layers of compounds of silicon to substrates by reactive cathodic sputtering of silicon-containing target materials, characterized in that a cast polycrystaline silicon moulding which has solidified from the molten state and contains at least 99 % silicon with doping substances from the group comprising boron, antimony, phosphorus and arsenic is subjected to sputtering as the target material by means of a direct voltage in an atmosphere containing the reaction gas.
Inventors
- 👤 Peter Dr. Wirz
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 23:26
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3407; C23C14/3414
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
75 words
Process for the deposit of optical layers of compounds of silicon to substrates by reactive cathodic sputtering of silicon-containing target materials, characterized in that a cast polycrystalline silicon moulding which has solidified from the molten state and contains at least 99% silicon with doping substances from the group comprising boron, antimony, phosphorus and arsenic is subjected to sputtering as the target material by means of a direct voltage in an atmosphere containing the reaction gas.
Claim 2
Dependent Claim
75 words
Process for the deposit of optical layers of compounds of silicon to substrates by reactive cathodic sputtering of silicon-containing target materials, characterized in that a cast polycrystalline silicon moulding which has solidified from the molten state and contains at least 99% silicon with doping substances from the group comprising boron, antimony, phosphorus and arsenic is subjected to sputtering as the target material by means of a direct voltage in an atmosphere containing the reaction gas.
Claim 3
Dependent Claim
58 words
Sputter cathode for carrying out the process according to claim 1 with a moulding of silicon-containing material as the target, characterized in that the target (5) consists of a cast polycrystalline silicon moulding which has solidified from the molten state and contains at least 99% silicon with doping substances from the group comprising boron, antimony, phosphorus and arsenic.
Claim 4
Dependent Claim
22 words
Sputter cathode according to claim 2, characterized in that the target has a specific resistance of 0.1 m cm to 100 cm.
Claim 5
Dependent Claim
21 words
Sputter cathode according to claim 3, characterized in that the target (5) has a specific resistance of 0,5 to 10 cm.
References Cited (Backward Citations)
No citation records indexed.
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