US5041739A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Substrate potential generating circuit
Assignee: NEC Electronics Corp
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Filing: 1990-08-14
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Granted: 1991-08-20
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Expires: 2010-08-14
Abstract
Abstract A substrate potential generating circuit of the present invention includes a first charge-pump circuit which produces a higher-potential voltage whose polarity is the same as that of and whose potential is higher than that of the power supply voltage and a second charge-pump circuit to which is supplied as a power source voltage the higher-potential voltage produced by the first charge-pump circuit and which generates a predetermined substrate potential to be supplied to a substrate of a semiconductor integrated circuit. The polarity of the substrate potential is opposite to that of the higher-potential voltage. The circuit of the present invention has enough capability of stably supplying the necessary substrate potential to the substrate without increasing the size of any transistors or capacitor constituting the second charge-pump circuit. In order to enhance the reliability of the circuit, the generating circuit may further comprise a high-potential control circuit which controls a maximum potential of the higher-potential voltage produced by the first charge-pump circuit and then supplied to the second charge-pump circuit as a power source voltage therefor.
Inventors
- 👤 Hiroyuki Goto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:55
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/205; H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/687; H03K17/6871; H03K17/6872
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
139 words
A substrate potential generating circuit for generating a predetermined substrate potential which is supplied to a substrate of a semiconductor integrated circuit, said generating circuit comprising: an oscillation circuit for oscillating a signal of a predetermined frequency; a first charge-pump circuit for producing a higher-potential voltage whose polarity is the same as that of and whose level is higher than that of the power supply voltage, the circuit having a first transistor which is turned ON/OFF by the signal from said oscillation circuit; and a second charge-pump circuit for generating said predetermined substrate potential whose polarity is opposite to that of said higher-potential voltage, the circuit having a second transistor which is turned ON/OFF by the signal from said oscillation circuit and which is supplied with said higher-potential voltage from said first charge-pump circuit as a power source voltage.
Claim 2
Dependent Claim
139 words
A substrate potential generating circuit for generating a predetermined substrate potential which is supplied to a substrate of a semiconductor integrated circuit, said generating circuit comprising: an oscillation circuit for oscillating a signal of a predetermined frequency; a first charge-pump circuit for producing a higher-potential voltage whose polarity is the same as that of and whose level is higher than that of the power supply voltage, the circuit having a first transistor which is turned ON/OFF by the signal from said oscillation circuit; and a second charge-pump circuit for generating said predetermined substrate potential whose polarity is opposite to that of said higher-potential voltage, the circuit having a second transistor which is turned ON/OFF by the signal from said oscillation circuit and which is supplied with said higher-potential voltage from said first charge-pump circuit as a power source voltage.
Claim 3
Dependent Claim
39 words
A substrate potential generating circuit according to claim 1, further comprising a waveform shaping circuit for wave-shaping the signal from said oscillation circuit into a square-wave signal and supplying the square-wave signal to said first and second charge-pump circuits.
Claim 4
Dependent Claim
121 words
A substrate potential generating circuit according to claim 1, in which said first charge-pump circuit includes: a first inverter having a complementary pair of first transistors which are turned ON/OFF by the signal from said oscillation circuit; a first capacitor having its one end connected to the output node of said first inverter; a first diode having its anode connected to the power supply source and its cathode connected to the other end of said first capacitor; and a second diode having its anode connected to the cathode of said first diode as well as the other end of said first capacitor and its cathode coupled to said second transistor of said second charge-pump circuit for supplying said higher-potential voltage thereto.
Claim 5
Dependent Claim
109 words
A substrate potential generating circuit according to claim 1, in which said second charge-pump circuit includes: a second inverter having a complementary pair of second transistors which are turned ON/OFF by the signal from said oscillation circuit; a second capacitor having its one end connected to the output node of said second inverter; a third diode having its cathode grounded and its anode connected to the other end of said second capacitor; and a fourth diode having its cathode connected to the anode of said third diode as well as the other end of said second capacitor and its anode connected to the substrate of said semiconductor integrated circuit.
Claim 6
Dependent Claim
171 words
A substrate potential generating circuit for generating a predetermined substrate potential which is supplied to a substrate of a semiconductor integrated circuit, said generating circuit comprising: an oscillation circuit for oscillating a signal of a predetermined frequency; a first charge-pump circuit for producing a higher-potential voltage whose polarity is the same as that of and whose level is higher than that of the power supply voltage, the circuit having a first transistor which is turned ON/OFF by the signal from said oscillation circuit; a second charge-pump circuit for generating said predetermined substrate potential whose polarity is opposite to that of said higher-potential voltage, the circuit having a second transistor which is turned ON/OFF by the signal from said oscillation circuit and which is supplied with said higher-potential voltage from said first charge-pump circuit as a power source voltage; and a high-potential control circuit for controlling a maximum potential of said higher-potential voltage produced by said first charge-pump circuit and then supplied to said second charge-pump circuit as a power source voltage.
Claim 7
Dependent Claim
171 words
A substrate potential generating circuit for generating a predetermined substrate potential which is supplied to a substrate of a semiconductor integrated circuit, said generating circuit comprising: an oscillation circuit for oscillating a signal of a predetermined frequency; a first charge-pump circuit for producing a higher-potential voltage whose polarity is the same as that of and whose level is higher than that of the power supply voltage, the circuit having a first transistor which is turned ON/OFF by the signal from said oscillation circuit; a second charge-pump circuit for generating said predetermined substrate potential whose polarity is opposite to that of said higher-potential voltage, the circuit having a second transistor which is turned ON/OFF by the signal from said oscillation circuit and which is supplied with said higher-potential voltage from said first charge-pump circuit as a power source voltage; and a high-potential control circuit for controlling a maximum potential of said higher-potential voltage produced by said first charge-pump circuit and then supplied to said second charge-pump circuit as a power source voltage.
Claim 8
Dependent Claim
48 words
A substrate potential generating circuit according to claim 5, further comprising a waveform shaping circuit for wave-shaping the signal from said oscillation circuit into a square-wave signal and supplying the square-wave signal to said first charge-pump circuit through said high-potential control circuit and directly to second charge-pump circuit.
Claim 9
Dependent Claim
84 words
A substrate potential generating circuit according to claim 5, in which said high-potential control circuit includes: a high-potential detection circuit which detects whether the higher-potential voltage produced by said first-charge-pump circuit exceeds a predetermined voltage or not; an inverter having its input connected to the output of said high-potential detection circuit; and a NAND gate which prevents the signal from said oscillation circuit from entering to said first charge-pump circuit when said high-potential detection circuit detects that the higher-potential voltage exceeds the predetermined voltage.
Claim 10
Dependent Claim
28 words
A substrate potential generating circuit according to claim 7, in which said high-potential detection circuit includes a plurality of serially-connected P-type transistors, an N-type transistor and two inverters.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-19 | 1995-02-18 | 1995-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-19 | 1999-02-18 | 1999-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-19 | 2003-02-18 | 2003-08-20 | $7700.00 | Window Closed / Lapsed |