US4754168A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Charge pump circuit for substrate-bias generator
Assignee: National Semiconductor Corp
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Filing: 1987-01-28
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Granted: 1988-06-28
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Expires: 2007-01-28
Abstract
Abstract A substrate bias generator of the type that includes a driver for providing an AC signal to a charge pump node, a first switch coupled between the charge pump node and ground such that charge is pumped from the charge pump node to ground when the voltage at the charge pump node is near its peak, and a second switch coupled between the charge pump node and the substrate such that charge is pumped to the charge pump node from the substrate when the voltage at the charge pump node is near its most negative value. A unidirectional switch is provided between the first switch and ground to prevent charge from flowing from ground to the charge pump node when the second switch is open.
Inventors
- 👤 Tuvia Liran
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:21
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/205
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
153 words
In a substrate bias generator circuit of the type used for generating a negative substrate voltage in N-channel semiconductor integrated circuits and which includes a driver for providing an AC signal to a charge pump node, first switching means coupled between the charge pump node and a ground node and second switching means coupled between the charged pump node and the substrate and wherein, when the voltage at the charge pump node is greater than a first value, charge is pumped into the ground node through the first switching means and, when the voltage at the charge pump node is less than a second value, charge is drained from the substrate through the second switching means, the improvement comprising means for preventing charge from flowing through the first switching means from the ground node to the charge pump node when the voltage at the charge pump node is less than the second value.
Claim 2
Dependent Claim
153 words
In a substrate bias generator circuit of the type used for generating a negative substrate voltage in N-channel semiconductor integrated circuits and which includes a driver for providing an AC signal to a charge pump node, first switching means coupled between the charge pump node and a ground node and second switching means coupled between the charged pump node and the substrate and wherein, when the voltage at the charge pump node is greater than a first value, charge is pumped into the ground node through the first switching means and, when the voltage at the charge pump node is less than a second value, charge is drained from the substrate through the second switching means, the improvement comprising means for preventing charge from flowing through the first switching means from the ground node to the charge pump node when the voltage at the charge pump node is less than the second value.
Claim 3
Dependent Claim
128 words
A substrate bias generator comprising: a driver for providing an AC signal to a charge pump node; a first switch coupled between the charge pump node and ground such that charge is pumped from the charge pump node to ground when the voltage at the charge pump node exceeds a first value; a second switch coupled between the charge pump node and the substrate such that charge is pumped to the charge pump node from the substrate when the voltage at the charge pump node is less than a second value; and a unidirectional switch connected between the first switch and ground for preventing charge from flowing from ground to the charge pump node when the voltage at the charge pump node is less than the second value.
Claim 4
Dependent Claim
128 words
A substrate bias generator comprising: a driver for providing an AC signal to a charge pump node; a first switch coupled between the charge pump node and ground such that charge is pumped from the charge pump node to ground when the voltage at the charge pump node exceeds a first value; a second switch coupled between the charge pump node and the substrate such that charge is pumped to the charge pump node from the substrate when the voltage at the charge pump node is less than a second value; and a unidirectional switch connected between the first switch and ground for preventing charge from flowing from ground to the charge pump node when the voltage at the charge pump node is less than the second value.
Claim 5
Dependent Claim
27 words
A substrate bias generator as in claim 2 wherein the unidirectional switch comprises an N-channel transistor the gate of which is connected to the charge pump node.
Claim 6
Dependent Claim
131 words
A substrate bias generator comprising: a first N-channel transistor having a gate which is connected to receive an AC input voltage and the source and drain of which are connected to a charge pump node; a second N-channel transistor having its source connected to the charge pump node and its drain and gate connected to the substrate; third and fourth N-channel transistors connected in series between the charge pump node and ground, the gate of the third transistor being connected to receive the AC input voltage, the gate of the fourth transistor being connected to the charge pump node, the threshold voltages of the second and third transistors being substantially equal and the threshold voltage of the fourth transistor being less then the threshold voltage of the second and third transistors.
Claim 7
Dependent Claim
131 words
A substrate bias generator comprising: a first N-channel transistor having a gate which is connected to receive an AC input voltage and the source and drain of which are connected to a charge pump node; a second N-channel transistor having its source connected to the charge pump node and its drain and gate connected to the substrate; third and fourth N-channel transistors connected in series between the charge pump node and ground, the gate of the third transistor being connected to receive the AC input voltage, the gate of the fourth transistor being connected to the charge pump node, the threshold voltages of the second and third transistors being substantially equal and the threshold voltage of the fourth transistor being less then the threshold voltage of the second and third transistors.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-28 | 1991-12-28 | 1992-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-28 | 1995-12-28 | 1996-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-28 | 1999-12-28 | 2000-06-28 | $7700.00 | Window Closed / Lapsed |