High density EEPROM cell and process for making the cell

Claim 2

A semiconductor memory cell comprising: a body of semiconductor material of first conductivity type; a first region of second conductivity type extending into said body from a surface; a second region of second conductivity type extending into said body from said surface; a third region of second conductivity type extending into said body from said surface between said first and second regions; a first channel region extending to said surface between said first region and said third region; a first layer of insulating material having a first thickness on said surface above said first channel and above at least a portion of said first and third regions; a first conductor on said first insulating layer above said first channel, said first conductor having one edge overlying a portion of said first region and another edge overlying a portion of said third region; a second channel region extending to said surface between said second region and said third region; a second layer of insulating material having a thickness less than said first thickness on said surface above said second channel region and above at least a portion of said second and third regions; a second conductor on said second insulating layer above said second channel, said second conductor having one edge overlying a portion of said second region and another edge overlying a portion of said third region; a third layer of insulating material on at least a portion of said second conductor; and a third conductor on said third insulating layer above said second conductor.

Claim 3

A cell according to claim 1, wherein said first, second and third conductors are comprised of polycrystalline silicon material.

Claim 4

A cell according to claim 2, wherein said first channel region is implanted with a dopant of the same conductivity type as said body.

Claim 5

A cell according to claim 1, wherein said first channel region is implanted with a dopant of the same conductivity type as said body.

Claim 6

A cell according to any of claims 1, 2 or 3, wherein a dopant of conductivity type opposite to that of said body is included below said first and third regions.

Claim 7

A semiconductor memory device formed in a body of semiconductor material of first conductivity type, said device including a plurality of storage bytes each of which includes a plurality of memory cells, wherein each memory cell comprises a floating gate transistor having a drain region of second conductivity type extending into the body from a surface, a floating region of second conductivity type extending into said body from said surface and spaced away from said drain region, a channel region extending to said surface between said drain region and said floating region, a layer of insulating material on said surface above said channel region, a floating gate on said insulating material, said floating gate having one edge overlying a portion of said drain region and another edge overlying a portion of said floating region, a layer of insulating material on said floating gate, and a control gate positioned on said insulating layer above said floating gate, and wherein each memory cell includes a select transistor comprising a source region of second conductivity type extending into said body from said surface and spaced away from said floating region, a channel region extending to said surface between said source region and said floating region, a layer of insulating material on said surface above said channel between said source region and said floating region and a select gate on said insulating layer above said channel region between said source region and said floating region, said select gate having one edge overlying a portion of said floating region and another edge overlying a portion of said source region.

Claim 8

A semiconductor memory device formed in a body of semiconductor material of first conductivity type, said device including a plurality of storage bytes each of which includes a plurality of memory cells, wherein each memory cell comprises a floating gate transistor having a drain region of second conductivity type extending into the body from a surface, a floating region of second conductivity type extending into said body from said surface and spaced away from said drain region, a channel region extending to said surface between said drain region and said floating region, a layer of insulating material on said surface above said channel region, a floating gate on said insulating material, said floating gate having one edge overlying a portion of said drain region and another edge overlying a portion of said floating region, a layer of insulating material on said floating gate, and a control gate positioned on said insulating layer above said floating gate, and wherein each memory cell includes a select transistor comprising a source region of second conductivity type extending into said body from said surface and spaced away from said floating region, a channel region extending to said surface between said source region and said floating region, a layer of insulating material on said surface above said channel between said source region and said floating region and a select gate on said insulating layer above said channel region between said source region and said floating region, said select gate having one edge overlying a portion of said floating region and another edge overlying a portion of said source region.

Claim 9

The device of claim 6, wherein one common floating region serves all memory cells in each storage byte, and wherein one common select transistor serves all memory cells in each storage byte, and wherein one common source region serves all memory cells in each byte.

Claim 10

The device of claim 7, wherein the channel region between said source region and said floating region is implanted with a dopant of the same conductivity type as said body.

Claim 11

The device of claim 7 or 8, wherein a dopant of conductivity type opposite to that of said body is included below said source region and said floating region.

Claim 12

The device of claim 6, wherein the channel region between said source region and said floating region is implanted with a dopant of the same conductivity type as said body.

Claim 13

The device of claim 6 or 10, wherein a dopant of conductivity type opposite to that of said body is included below said source region and said floating region.

Claim 14

An electrically erasable semiconductor memory device for storing data words in a word storage location, each said word storage location having a plurality of storage cells which are arranged in a row with each cell in said row addressable by a column address line and a row address line, each of said cells in said word storage location having a drain region coupled to a predetermined column address line, a floating gate, a control gate positioned above said floating gate, means connecting each of said control gates in common, and wherein one floating region serves each of said cells in said word storage location, one source region serves each of said cells in said word storage location and wherein each word storage location further includes a select gate positioned above at least a portion of said source region and a portion of said floating region, means coupling said select gate to a predetermined row address line, said memory device further including a source line coupled to said source region, a sense line, and gate means for connecting said sense line to the commonly connected control gates of the cells in said word storage location in response to a signal from said row address line for said word storage location.

Claim 15

An electrically erasable semiconductor memory device for storing data words in a word storage location, each said word storage location having a plurality of storage cells which are arranged in a row with each cell in said row addressable by a column address line and a row address line, each of said cells in said word storage location having a drain region coupled to a predetermined column address line, a floating gate, a control gate positioned above said floating gate, means connecting each of said control gates in common, and wherein one floating region serves each of said cells in said word storage location, one source region serves each of said cells in said word storage location and wherein each word storage location further includes a select gate positioned above at least a portion of said source region and a portion of said floating region, means coupling said select gate to a predetermined row address line, said memory device further including a source line coupled to said source region, a sense line, and gate means for connecting said sense line to the commonly connected control gates of the cells in said word storage location in response to a signal from said row address line for said word storage location.

Claim 16

A memory device according to claim 12, wherein said device further includes a plurality of said word storage locations arranged in rows and columns, and wherein within each column of word storage locations the drain regions of each cell in common columns are connected in common, the source regions of each word location in a column are connected in common; a source line is provided for each column of word locations and said source line is connected to said commonly connected source regions of the column; the control gates of the storage cells of the word storage locations in the same row are connected in common; a sense line is provided for the plurality of word storage locations; a gate means is provided for each row of word storage locations for selectively connecting said sense line to the commonly connected control gates in said row of word storage locations; and the select gates for each word storage location in the same row are connected in common and to said row address line for the row of word storage locations.

Claim 17

The memory device according to claim 13, wherein the source lines for each column of word locations are connected in common.

Claim 18

The semiconductor memory device according to any of claims 12, 13, or 14, wherein said gate means comprises a MOS device.