US5021365A
Expired / Lapsed
US
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Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning
Assignee: International Business Machines Corp
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Filing: 1989-03-13
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Granted: 1991-06-04
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Expires: 2009-03-13
Abstract
Abstract Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the surface of the semiconductor for flat band performance and with a localized inclusion of some anionic species for barrier performance so that oxide and metal work function responsiveness is available in structure and performance in MOSFET, MESFET and different work function metal FET structures. A cationic gallium oxide is produced on GaAs by oxide growth during illumination and while being rinsed with oxygenated water. The oxidation is used to produce both anionic and cationic species while the rinsing process selectively removes all the anionic species.
Inventors
- 👤 Peter D. Kirchner
- 👤 Alan C. Warren
- 👤 Jerry M. Woodall
- 👤 Steven L. Wright
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 23:19
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6312; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D62/00; H10D62/80; H10D62/83; H10D62/85; H10D64/00; H10D64/01; H10D64/013; H10D64/01358; H10D64/60; H10D64/62; H10D64/64; H10D64/66; H10D64/68; H10D64/691; H10P14/68; Y; Y10; Y10S; Y10S148/00; Y10S148/056; Y10S148/081; Y10S148/118
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
75 words
The process of providing a cationic ingredient oxide on a surface area of a compound semiconductor member comprising in combination the steps of: growing on said surface area, in the presence of an oxidation enhancement agent, a composite oxide of oxides of each ingredient of said compound semiconductor member while simultaneously subjecting said surface area and said composite oxide to an anionic species removal agent to remove said anionic species leaving said cationic ingredient oxide.
Claim 2
Dependent Claim
75 words
The process of providing a cationic ingredient oxide on a surface area of a compound semiconductor member comprising in combination the steps of: growing on said surface area, in the presence of an oxidation enhancement agent, a composite oxide of oxides of each ingredient of said compound semiconductor member while simultaneously subjecting said surface area and said composite oxide to an anionic species removal agent to remove said anionic species leaving said cationic ingredient oxide.
Claim 3
Dependent Claim
32 words
The process of claim 1 where said compound semiconductor is GaAs, said cationic ingredient oxide is an oxide of gallium and said anionic species is the oxides of arsenic and arsenic ions.
Claim 4
Dependent Claim
12 words
The process of claim 2 where said oxidation enhancement agent is light.
Claim 5
Dependent Claim
14 words
The process of claim 3 wherein said anionic species removal agent is oxygenated water.
Claim 6
Dependent Claim
43 words
The process of claim 1 providing for localized anionic oxide inclusions including the steps of masking at least one area to remain anion free, removing said cationic ingredient oxide from unmasked areas, growing anionic oxide in unmasked areas and removing the masking material.
Claim 7
Dependent Claim
11 words
The process of claim 5 where said compound semiconductor is GaAs.
Claim 8
Dependent Claim
72 words
The process of providing a compound semiconductor member with areas of cationic ingredient oxide and with localized inclusions of anionic oxide comprising in combination the steps of: growing an anionic oxide over said semiconductor member, masking with a resist areas to contain anionic species, removing said anionic oxide from said unmasked areas, growing a cationic oxide in the presence of an oxidation agent and an anion removal agent, and removing said resist.
Claim 9
Dependent Claim
72 words
The process of providing a compound semiconductor member with areas of cationic ingredient oxide and with localized inclusions of anionic oxide comprising in combination the steps of: growing an anionic oxide over said semiconductor member, masking with a resist areas to contain anionic species, removing said anionic oxide from said unmasked areas, growing a cationic oxide in the presence of an oxidation agent and an anion removal agent, and removing said resist.
Claim 10
Dependent Claim
10 words
The process of claim 7 where said compound is GaAs.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-06-03 | 1994-12-03 | 1995-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-03 | 1998-12-03 | 1999-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-03 | 2002-12-03 | 2003-06-04 | $7700.00 | Window Closed / Lapsed |