US4597825A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Intermediate passivation and cleaning of compound semiconductor surfaces
Assignee: International Business Machines Corp
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Filing: 1985-04-02
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Granted: 1986-07-01
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Expires: 2005-04-02
Abstract
Abstract Crystalline compound semiconductors are passivated with a layer of the most volatile element thereof to prevent the formation of oxides that would interfere with further processing. A GaAs crystal is provided with a surface layer of arsenic. The arsenic layer is formed by exposure to light having a photon energy greater than 1.8 eV, at a power density of 0.01 to 0.5 watts per cm 2 while the GaAs immersed in a 1:1 HCl:H 2 O solution for a period of 10-30 minutes. The intermediate processing passivated GaAs crystal may be stored and handled in air and the As layer is removed by low temperature baking.
Inventors
- 👤 John L. Freeouf
- 👤 Thomas N. Jackson
- 👤 Peter Oelhafen
- 👤 George D. Pettit
- 👤 Jerry M. Woodall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 00:28
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10P; H10P14/00; H10P14/60; H10W74/40; H10W74/43; H10W74/481
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
72 words
The method of providing intermediate processing passivation for a monocrystalline multielement compound semiconductor member comprising in combination the steps of: immersing said semiconductor member in a bath of 1:1 HCl:H 2 O while illuminating said multielement semiconductor member for a duration of from 10-30 minutes with a light having a photon energy greater than the energy gap width of said semiconductor at a power density of greater than 0.01 watts/cm 2 .
Claim 2
Independent Claim
72 words
The method of providing intermediate processing passivation for a monocrystalline multielement compound semiconductor member comprising in combination the steps of: immersing said semiconductor member in a bath of 1:1 HCl:H 2 O while illuminating said multielement semiconductor member for a duration of from 10-30 minutes with a light having a photon energy greater than the energy gap width of said semiconductor at a power density of greater than 0.01 watts/cm 2 .
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein said semiconductor is a member of a group of GaAs, InAs, GaInAs and GaAlAs.
Claim 4
Dependent Claim
25 words
The method of claim 2 wherein said semiconductor is GaAs and said power density is in the range of 0.01 to 0.5 watts/cm 2 .
Claim 5
Independent Claim
65 words
The method of formation of a passivation layer on a device receiving surface of a multielement compound semiconductor crystal comprising the step of etching said crystal in dilute HCl under illumination of light with a photon energy greater than the energy gap width of said crystal at a power density greater than 0.01 watts per cm 2 for a duration of 10 to 20 minutes.
Claim 6
Independent Claim
65 words
The method of formation of a passivation layer on a device receiving surface of a multielement compound semiconductor crystal comprising the step of etching said crystal in dilute HCl under illumination of light with a photon energy greater than the energy gap width of said crystal at a power density greater than 0.01 watts per cm 2 for a duration of 10 to 20 minutes.
Claim 7
Dependent Claim
20 words
The method of claim 4 wherein said crystal is a member of a group of GaAs, InAs, GaInAs and GaAlAs.
Claim 8
Dependent Claim
27 words
The method of claim 5 wherein said crystal is GaAs and said power density is in the range from 0.01 to 0.5 watts per cm 2 .
References Cited (Backward Citations)
US4351706A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-06-30 | 1989-12-30 | 1990-07-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-30 | 1993-12-30 | 1994-07-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-30 | 1997-12-30 | 1998-07-01 | $7700.00 | Window Closed / Lapsed |