US5003359A
Expired / Lapsed
US
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Optoelectronic integrated circuit
Assignee: Sarnoff Corp
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Filing: 1989-12-29
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Granted: 1991-03-26
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Expires: 2009-12-29
Abstract
Abstract The present invention relates to an optoelectronic integrated circuit having a substantially planar surface and which includes at least one laser diode and at least one field effect transistor. The integrated circuit comprises a substrate of semi-insulating GaAs having on a surface thereof in succession a first clad layer, a first confinement layer, a quantum well active layer, a second confinement layer, a second clad layer and an FET active layer. The FET active layer is of a material having good field effect transistor characteristics, such as N type GaAs or N type A1GaAs over a layer of undoped GaAs. The quantum well active layer is formed of alternating layers of undoped GaAs and a material which is capable of generating light of a wavelength longer than can be absorbed by the FET active layer, such as undoped InGaAs. The laser diode includes spaced contact regions of opposite conductivity type extending through the layers to the quantum well active layer. The field effect transistor comprises a groove in the FET active layer, a gate in the groove on the FET active layer and having a Schottky barrier contact with the FET active layer, and source and drain contacts on the FET active layer at opposite sides of the groove.
Inventors
- 👤 Joseph H. Abeles
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:04
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0261; H01S5/10; H01S5/18; H01S5/185; H01S5/187; H10F; H10F55/00; H10F55/20; H10F55/25; H10F55/255; H10H29/00; H10H29/10
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
93 words
An optoelectronic integrated circuit comprising: a body of Group III-V semiconductor materials including a N type FET active layer along a surface thereof and a optically active layer extending across the body parallel to and spaced from the FET active layer, said optically active layer being of a semiconductor material which is capable of generating light of a wavelength longer than can be absorbed in the material of the FET active layer; a field effect transistor in said FET active layer; and a laser diode in said body including the optically active layer.
Claim 2
Dependent Claim
93 words
An optoelectronic integrated circuit comprising: a body of Group III-V semiconductor materials including a N type FET active layer along a surface thereof and a optically active layer extending across the body parallel to and spaced from the FET active layer, said optically active layer being of a semiconductor material which is capable of generating light of a wavelength longer than can be absorbed in the material of the FET active layer; a field effect transistor in said FET active layer; and a laser diode in said body including the optically active layer.
Claim 3
Dependent Claim
20 words
An optoelectronic integrated circuit in accordance with claim 1 in which the optically active layer is a quantum well layer.
Claim 4
Dependent Claim
29 words
An optoelectronic integrated circuit in accordance with claim 2 in which the quantum well layer comprises alternating layers of said semiconductor material and GaAs each of which is undoped.
Claim 5
Dependent Claim
21 words
An optoelectronic integrated circuit in accordance with claim 3 in which the semiconductor material of the quantum well layer is InGaAs.
Claim 6
Dependent Claim
33 words
An optoelectronic integrated circuit in accordance with claim 4 including undoped clad layers on each side of the laser active layer and the FET active layer is on one of the clad layers.
Claim 7
Dependent Claim
19 words
An optoelectronic integrated circuit in accordance with claim 5 in which each of the clad layers is of AlGaAs.
Claim 8
Dependent Claim
25 words
An optoelectronic integrated circuit in accordance with claim 6 including an undoped confinement layer between each of the clad layers and the optically active layer.
Claim 9
Dependent Claim
35 words
An optoelectronic integrated circuit in accordance with claim 7 in which each of the confinement layers is of AlGaAs in which the content of aluminum decreases from the clad layers to the optically active layer.
Claim 10
Dependent Claim
50 words
An optoelectronic integrated circuit in accordance with claim 8 including a pair of spaced contact regions extending through the body from the FET active layer to at least the optically active layer, one of said contact regions being of P type conductivity and the other being of N type conductivity.
Claim 11
Dependent Claim
52 words
An optoelectronic integrated circuit in accordance with claim 9 in which the laser diode includes a pair of spaced grooves extending through the body from the FET active layer into the clad layer adjacent the FET active layer and each of the contact regions is adjacent a separate one of said grooves.
Claim 12
Dependent Claim
54 words
An optoelectronic integrated circuit in accordance with claim 10 in which the field effect transistor includes a groove in the FET active layer, a gate in the groove and in Schottky barrier contact with the FET active layer, and source and drain contacts on the FET active layer at opposite sides of the groove.
Claim 13
Dependent Claim
20 words
An optoelectronic integrated circuit in accordance with claim 11 in which the FET active layer is of N type GaAs.
Claim 14
Dependent Claim
44 words
An optoelectronic integrated circuit in accordance with claim 11 in which the FET active layer is a layer of undoped GaAs on the clad layer and a layer of N type AlGaAs on the GaAs layer, and the groove is in the AlGaAs layer.
Claim 15
Dependent Claim
28 words
An optoelectronic integrated circuit in accordance with claim 11 including a conductive metallization pattern on the surface of the body electrically connecting the FET to the laser diode.
Claim 16
Dependent Claim
35 words
An optoelectronic integrated circuit in accordance with claim 14 including a plurality of FETs in the FET active layer and the metallization pattern electrically connects the FETs and the laser diode in a desired circuit.
Claim 17
Dependent Claim
37 words
An optoelectronic integrated circuit in accordance with claim 11 including a photodetector in said body, said photodetector including the optically active layer and a pair of spaced contacts extending through the body to the optically active layer.
Claim 18
Dependent Claim
109 words
An optoelectronic integrated circuit comprising: a substrate of semi-insulating GaAs having a surface; a first clad layer on the substrate surface; a laser quantum well layer over the first clad layer; a second clad layer over the quantum well layer; an FET active layer of a Group III-V semiconductor material over the second clad layer; a field effect transistor in said FET active layer; and a laser diode including said clad layers and the quantum well layer; said quantum well layer including a Group III-V semiconductor material which is capable of generating light of a wavelength longer than can be absorbed by the material of the FET active layer.
Claim 19
Dependent Claim
109 words
An optoelectronic integrated circuit comprising: a substrate of semi-insulating GaAs having a surface; a first clad layer on the substrate surface; a laser quantum well layer over the first clad layer; a second clad layer over the quantum well layer; an FET active layer of a Group III-V semiconductor material over the second clad layer; a field effect transistor in said FET active layer; and a laser diode including said clad layers and the quantum well layer; said quantum well layer including a Group III-V semiconductor material which is capable of generating light of a wavelength longer than can be absorbed by the material of the FET active layer.
Claim 20
Dependent Claim
24 words
An optoelectronic integrated circuit in accordance with claim 17 in which the quantum well layer comprises alternating layers of undoped GaAs and undoped InGaAs.
Claim 21
Dependent Claim
16 words
An optoelectronic integrated circuit in accordance with claim 18 in which the clad layers are AlGaAs.
Claim 22
Dependent Claim
51 words
An optoelectronic integrated circuit in accordance with claim 19 in which the laser diode includes spaced contact regions extending through the FET active layer, the second clad layer and the quantum well layer, one of said contact regions being of P type conductivity and the other being of N type conductivity.
Claim 23
Dependent Claim
43 words
An optoelectronic integrated circuit in accordance with claim 20 in which the laser diode further includes spaced grooves extending through the FET active layer and the second clad layer, and each of the contact regions is along a separate one of said grooves.
Claim 24
Dependent Claim
55 words
An optoelectronic integrated circuit in accordance with claim 20 in which the field effect transistor comprises a groove in the FET active layer, a gate in the groove and having a Schottky barrier contact with the FET active layer, and source and drain contacts on the FET active layer at opposite sides of the groove.
Claim 25
Dependent Claim
19 words
An optoelectronic integrated circuit in accordance with claim 21 in which the FET active layer is N type GaAs.
Claim 26
Dependent Claim
34 words
An optoelectronic integrated circuit in accordance with claim 23 including a contact layer of highly conductive GaAs over the N type GaAs layer and the source and drain contacts are on the contact layer.
Claim 27
Dependent Claim
45 words
An optoelectronic integrated circuit in accordance with claim 22 in which the FET active layer comprises a layer of undoped GaAs on the second clad layer and a layer of N type AlGaAs on the GaAs layer and the groove is in the AlGaAs layer.
Claim 28
Dependent Claim
28 words
An optoelectronic integrated circuit in accordance with claim 22 including an isolation region of N type conductivity extending through the layers between the FET and the laser diode.
Claim 29
Dependent Claim
28 words
An optoelectronic integrated circuit in accordance with claim 22 including a conductive metallization pattern on the surface of the body electrically connecting the FET to the laser diode.
Claim 30
Dependent Claim
35 words
An optoelectronic integrated circuit in accordance with claim 27 including a plurality of FETs in the FET active layer and the metallization pattern electrically connects the FETs and the laser diode in a desired circuit.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-03-25 | 1994-09-24 | 1995-03-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-25 | 1998-09-24 | 1999-03-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-25 | 2002-09-24 | 2003-03-26 | $7700.00 | Window Closed / Lapsed |