US4716125A
Expired / Lapsed
US
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Method of producing semiconductor laser
Assignee: Fujitsu Ltd
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Filing: 1986-11-26
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Granted: 1987-12-29
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Expires: 2006-11-26
Abstract
Abstract A compound semiconductor laser comprises a semi-insulating substrate, a lower clad layer, an MQW active layer, an upper clad layer, and two electrodes on the top surface thereof. The upper clad layer is formed so as to have a property of reducing the diffusion coefficient of impurities, from the lower portion toward the upper portion thereof. Impurity atoms are thermally diffused into the lower clad layer from the top surface thereof to form an N-type region and a P-type region, respectively. The side diffusion fronts of the N- and P-type regions are nearly vertical, and thus a narrow MQW active region is defined by disordered portions of the MQW active layer in the N- and P-type regions. The light and carriers are effectively confined in the narrow active region by using the vertical and transverse double-heterostructures and refractive index differences.
Inventors
- 👤 Masao Makiuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:23
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H01S5/0422; H01S5/0424
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
237 words
A method of producing a semiconductor laser comprising the steps of: forming a first high resistance clad layer, having a first band gap, on a semi-insulating semiconductor substrate; forming an active layer of a multiquantum well structure, in which quantum wells have a second band gap narrower than said first band gap, on said first clad layer; forming a second high resistance clad layer on said active layer, said second clad layer having a property of reducing the diffusion coefficient of impurities toward the upper surface thereof, from the active layer side, the lower portion of said second clad layer having a third band gap wider than said second band gap; selectively thermally diffusing first impurity atoms into said first clad layer through a first portion of said second clad layer and a first portion of said active layer, so that said first portion of said active layer is disordered and the diffused portions form a first conduction region of a first conductivity type; and selectively thermally diffusing second impurity atoms into said clad layer through a second portion of said second clad layer and a second portion of said active layer at a desired distance from said first portion of said active layer, so that said second portion of said active layer is disordered and the diffused portions form a second conduction region of a second conductivity type opposite to that of said first conductivity type.
Claim 2
Independent Claim
237 words
A method of producing a semiconductor laser comprising the steps of: forming a first high resistance clad layer, having a first band gap, on a semi-insulating semiconductor substrate; forming an active layer of a multiquantum well structure, in which quantum wells have a second band gap narrower than said first band gap, on said first clad layer; forming a second high resistance clad layer on said active layer, said second clad layer having a property of reducing the diffusion coefficient of impurities toward the upper surface thereof, from the active layer side, the lower portion of said second clad layer having a third band gap wider than said second band gap; selectively thermally diffusing first impurity atoms into said first clad layer through a first portion of said second clad layer and a first portion of said active layer, so that said first portion of said active layer is disordered and the diffused portions form a first conduction region of a first conductivity type; and selectively thermally diffusing second impurity atoms into said clad layer through a second portion of said second clad layer and a second portion of said active layer at a desired distance from said first portion of said active layer, so that said second portion of said active layer is disordered and the diffused portions form a second conduction region of a second conductivity type opposite to that of said first conductivity type.
Claim 3
Dependent Claim
22 words
A method according to claim 1, further comprising steps of: forming electrodes electrically connected with said first and second conduction regions, respectively.
Claim 4
Dependent Claim
27 words
A method according to claim 1, wherein said second clad layer is a compound semiconductor, and at least one component content of said compound semiconductor is varied.
Claim 5
Dependent Claim
24 words
A method according to claim 3, wherein the step of forming said second clad layer is carried out by a molecular beam epitaxy method.
Claim 6
Dependent Claim
20 words
A method according to claim 4, wherein a component content is varied by controlling a cell temperature for said component.
Claim 7
Dependent Claim
25 words
A method according to claim 3, wherein the step of forming said second clad layer is carried out by a metalorganic chemical vapor deposition method.
Claim 8
Dependent Claim
20 words
A method according to claim 6, wherein a component content is varied by controlling a flow rate for said component.
Claim 9
Dependent Claim
34 words
A method according to claim 3, wherein said second clad layer is of AlGaAs and the Al content is gradually reduced from a lower portion toward an upper portion of said second clad layer.
Claim 10
Dependent Claim
23 words
A method according to claim 1, wherein the steps of thermal diffusion for impurity atoms are carried out by using a vapor source.
Claim 11
Dependent Claim
23 words
A method according to claim 1, wherein the steps of thermal diffusion for impurity atoms are carried out by using a solid source.
Claim 12
Dependent Claim
37 words
A method according to claim 1, wherein the steps of thermal diffusion for impurity atoms are carried out by ion-implanting said atoms at a shallow depth and carrying out an annealing process to diffuse said implanted atoms.
Claim 13
Independent Claim
185 words
A method of producing a compound semiconductor laser comprising steps of: forming a first high resistance clad layer of AlGaAs on a semi-insulating GaAs substrate; forming a multiquantum well active layer comprising GaAs wells and AlGaAs barrier layers on said first clad layer; forming a second high resistance clad layer of AlGaAs on said active layer, the Al content of said second clad layer being decreased toward an upper portion from a lower portion thereof; forming a cap layer of undoped GaAs on said second clad layer; selectively removing said cap layer; selectively thermally diffusing P-type impurity atoms into said first clad layer through said second clad layer and said active layer to form a P-type region; selectively thermally diffusing N-type impurity atoms into said first clad layer through said first clad layer and said active layer to form an N-type region; selectively forming a P-electrode on said cap layer; alloying said P-electrode to cause an electrical connection thereof with said P-type region; selectively forming an N-electrode on said cap layer; and alloying said N-electrode to cause an electrical connection thereof with said N-type region.
Claim 14
Independent Claim
185 words
A method of producing a compound semiconductor laser comprising steps of: forming a first high resistance clad layer of AlGaAs on a semi-insulating GaAs substrate; forming a multiquantum well active layer comprising GaAs wells and AlGaAs barrier layers on said first clad layer; forming a second high resistance clad layer of AlGaAs on said active layer, the Al content of said second clad layer being decreased toward an upper portion from a lower portion thereof; forming a cap layer of undoped GaAs on said second clad layer; selectively removing said cap layer; selectively thermally diffusing P-type impurity atoms into said first clad layer through said second clad layer and said active layer to form a P-type region; selectively thermally diffusing N-type impurity atoms into said first clad layer through said first clad layer and said active layer to form an N-type region; selectively forming a P-electrode on said cap layer; alloying said P-electrode to cause an electrical connection thereof with said P-type region; selectively forming an N-electrode on said cap layer; and alloying said N-electrode to cause an electrical connection thereof with said N-type region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-12-28 | 1991-06-29 | 1991-12-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-12-28 | 1995-06-29 | 1995-12-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-12-28 | 1999-06-29 | 1999-12-29 | $7700.00 | Window Closed / Lapsed |