US4361887A
Expired / Lapsed
US
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Semiconductor light emitting element
Assignee: Hitachi Ltd
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Filing: 1980-02-29
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Granted: 1982-11-30
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Expires: 2000-02-29
Abstract
Abstract A semiconductor laser light emitting element comprises a semiconductor substrate, a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over the substrate and having a p-n junction defined therein. The first and third semiconductor layers have smaller refractive indices and greater forbidden band gaps than the second semiconductor layer and are opposite in conductivity type to each other. Provided are on the substrate a field effect transistor section having first and second electrodes and a gate electrode disposed between the first and second electrodes, a means for serving as an optical resonator for emitting light in the lengthwise direction of the p-n junction. A means is formed on one surface of the laminate region for injecting current into the third semiconductor layer, the current injection means is short-circuited with the first electrode of the field transistor section and a means is formed on the substrate for receiving the current injected from the current injecting means.
Inventors
- 👤 Michiharu Nakamura
- 👤 Motohisa Hirao
- 👤 Shigeo Yamashita
- 👤 Tadashi Fukuzawa
- 👤 Junichi Umeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:59
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0265
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
191 words
A semiconductor light emitting element comprising: a semiconductor substrate, a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over said substrate and having a p-n junction defined therein, said first and third semiconductor layers having smaller refractive indices and greater forbidden band gaps than said second semiconductor layer and being opposite in conductivity type to each other to determine laser oscillation, a field effect transistor section comprising a fourth semiconductor layer having a high resistivity and formed over said third semiconductor layer and a fifth semiconductor layer formed on said fourth semiconductor layer, said field effect transistor section having first and second electrodes and a gate electrode disposed between said first and second electrodes formed on said fifth layer, means for serving as an optical resonator for emitting light in the lengthwise direction of said p-n junction, and first means formed on one surface of said laminate region and second means formed on said substrate for injecting current into said third semiconductor layer, said first means for injecting current being short-circuited with said first electrode of said field effect transistor section.
Claim 2
Dependent Claim
191 words
A semiconductor light emitting element comprising: a semiconductor substrate, a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over said substrate and having a p-n junction defined therein, said first and third semiconductor layers having smaller refractive indices and greater forbidden band gaps than said second semiconductor layer and being opposite in conductivity type to each other to determine laser oscillation, a field effect transistor section comprising a fourth semiconductor layer having a high resistivity and formed over said third semiconductor layer and a fifth semiconductor layer formed on said fourth semiconductor layer, said field effect transistor section having first and second electrodes and a gate electrode disposed between said first and second electrodes formed on said fifth layer, means for serving as an optical resonator for emitting light in the lengthwise direction of said p-n junction, and first means formed on one surface of said laminate region and second means formed on said substrate for injecting current into said third semiconductor layer, said first means for injecting current being short-circuited with said first electrode of said field effect transistor section.
Claim 3
Dependent Claim
43 words
A semiconductor light emitting element as claimed in claim 1, wherein said fourth layer is formed on said lamination of said first, second and third layers and said means for injecting current is so formed as to penetrate said fifth and fourth layers.
Claim 4
Dependent Claim
28 words
A semiconductor light emitting element as claimed in claim 1, wherein a region of high resistivity is formed between said field effect transistor section and said optical resonator.
Claim 5
Dependent Claim
35 words
A semiconductor light emitting element as claimed in claim 2, wherein a region which provides electrical isolation at least between said field effect transistor section and said optical resonator, is formed in said fifth layer.
Claim 6
Dependent Claim
31 words
A semiconductor light emitting element as claimed in claim 1, wherein a groove whose bottom reaches said first layer is formed between said field effect transistor section and said optical resonator.
Claim 7
Dependent Claim
209 words
A semiconductor light emitting element comprising: a semiconductor substrate, a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over said substrate and having a p-n junction defined therein, said first and third semiconductor layers having smaller refractive indices and greater forbidden band gaps than said second semiconductor layer and being opposite in conductivity type to each other to determine laser oscillation, a field effect transistor section having first and second electrodes and a gate electrode disposed between said first and second electrodes, means for serving as an optical resonator for emitting light in the lengthwise direction of said p-n junction, first means formed on one surface of said laminate region and second means formed on said substrate for injecting current into said third semiconductor layer, said first means for injecting current being short-circuited with said first electrode of said field effect transistor section wherein said field effect transistor section comprises a fourth semiconductor layer having a high resistivity and formed on said substrate, a fifth semiconductor layer formed on said fourth layer, a gate electrode formed on said fifth layer, and a first and a second electrode formed on both sides of said gate electrode on said fifth layer.
Claim 8
Dependent Claim
209 words
A semiconductor light emitting element comprising: a semiconductor substrate, a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over said substrate and having a p-n junction defined therein, said first and third semiconductor layers having smaller refractive indices and greater forbidden band gaps than said second semiconductor layer and being opposite in conductivity type to each other to determine laser oscillation, a field effect transistor section having first and second electrodes and a gate electrode disposed between said first and second electrodes, means for serving as an optical resonator for emitting light in the lengthwise direction of said p-n junction, first means formed on one surface of said laminate region and second means formed on said substrate for injecting current into said third semiconductor layer, said first means for injecting current being short-circuited with said first electrode of said field effect transistor section wherein said field effect transistor section comprises a fourth semiconductor layer having a high resistivity and formed on said substrate, a fifth semiconductor layer formed on said fourth layer, a gate electrode formed on said fifth layer, and a first and a second electrode formed on both sides of said gate electrode on said fifth layer.
Claim 9
Dependent Claim
72 words
A semiconductor light emitting element as claimed in claims 1, 6, 2 or 3, wherein said substrate is of GaAs crystal and said first, second, third, fourth and fifth layers are respectively formed of Ga 1-x Al x As (0.2≦x≦0.7), Ga 1-y Al y As (0≦y≦0.3), Ga 1-z Al z As (0.2≦z≦0.7), Ga 1-s Al s As s (0≦s≦0.7) and Ga 1-t Al t As t (0≦t≦0.3), where z<y, z<s and t<s.
Claim 10
Dependent Claim
76 words
A semiconductor light emitting element as claimed in claims 1, 6, 2 or 3, wherein said substrate is of InP crystal and said first, second, third, fourth and fifth layers are respectively formed of Ga x In 1-x As y P 1-y (0≦x,y≦1), Ga s In 1-s As t P 1-t (0≦s,t≦1), InP, Ga w In 1-w As z P 1-z (0≦w,z≦1) and Ga u In 1-u As v P 1-v (0≦u,v≦1), where s>x and w>u.
Claim 11
Dependent Claim
25 words
A semiconductor light emitting element as claimed in claim 6, wherein a groove is formed between said field effect transistor section and said optical resonator.
References Cited (Backward Citations)
US4065729A
Cited
US4212020A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-29 | 1986-05-31 | 1986-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-29 | 1990-05-31 | 1990-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-29 | 1994-05-31 | 1994-11-30 | $7700.00 | Window Closed / Lapsed |