Fabrication of CMOS integrated devices with reduced gate length and lightly doped drain

Claim 2

A fabrication process for CMOS devices integrated on a doped monocrystalline silicon substrate of a first type of conductivity wherein deep well diffusions of a second type of conductivity are formed within which transistors having a channel of said second conductivity are formed and outside which transistors having a channel of said first conductivity are formed, comprising forming a well region of said second conductivity in a monocrystalline silicon substrate of said first conductivity, forming isolation structures for defining active areas on the front of the devices, forming a gate oxide layer at least over said active areas, forming a gate over an isolating gate oxide layer within said active areas belonging to n-channel and to p-channel transistors, forming lightly doped drain regions in transistors of both types of conductivity close to the sides of said gate, forming spacers of a dielectric material along the side of said gate, masking and implanting an n-type dopant for forming heavily doped drain regions in n-channel transistors and masking and implanting a p-type dopant for forming heavily doped drain regions in p-channel transistors, opening and forming contacts and interconnecting lines, characterized by the fact that said lightly doped drain regions are formed by means of a single masking operation in transistors of both channel conductivity types by carrying out, after forming said gate and before forming said spacers, the following steps: (a) implanting without utilizing any mask a dopant of one of said first or second conductivity type in a dose sufficient to form lightly doped drain regions of the respective type of conductivity in all said active areas; (b) masking the active areas of transistors with a channel conductivity of the opposite type of the dopant implanted without masking in the preceding step (a); and (c) implanting a dopant of an opposite type of conductivity of the dopant implanted in a step (a) in a dose sufficient to compensate and invert the conductivity in unmasked active areas thus forming lightly doped drain regions of opposite conductivity type therein.

Claim 3

The process of claim 1 wherein the lightly doped drain regions have an effective concentration of about 10 18 atoms per cubic centimeter.

Claim 4

A fabrication process for CMOS devices integrated on a doped monocrystalline silicon substrate of a first type of conductivity wherein deep well diffusions of a second type of conductivity are formed within which transistors having a channel of said second conductivity are formed and outside which transistors having a channel of said first conductivity are formed, comprising forming a well region of said second conductivity in a monocrystalline silicon substrate of said first conductivity, forming isolation structures for defining active areas on the front of the devices, forming a gate oxide layer at least over said active areas, forming a gate over an isolating gate oxide layer within said active areas belonging to n-channel and to p-channel transistors, forming lightly doped drain regions in transistors of both types of conductivity close to the sides of said gate, forming spacers of a dielectric material along the sides of said gate, masking and implanting an n-type dopant for forming heavily doped drain regions in n-channel transistors and masking and implanting a p-type dopant for forming heavily doped drain regions in p-channel transistors, opening and forming contacts and interconnecting lines, characterized by the fact that said lightly doped drain regions are formed by means of a single masking operation in transistors of both channel conductivity types by carrying out, after forming said gate and before forming said spacers, the following steps: a. masking the active areas of transistors with a channel conductivity of one of said first and second conductivities; b. then implanting a dopant of the same conductivity of said channel conductivity and removing said mask; c. and then implanting without utilizing any mask a dopant of opposite conductivity to said channel conductivity and in a dose sufficient to form lightly doped drain regions of the respective conductivity type in said previously masked active areas; and wherein the dose of said dopant implanted in step (b) is sufficient to compensate for the unmasked implantation of the dopant in step (c) in order to form lightly doped drain regions of respective conductivity type in the active areas of transistors with a channel of opposite conductivity.

Claim 5

A fabrication process for CMOS devices integrated on a doped monocrystalline silicon substrate of a first type of conductivity wherein deep well diffusions of a second type of conductivity are formed within which transistors having a channel of said second conductivity are formed and outside which transistors having a channel of said first conductivity are formed, comprising forming a well region of said second conductivity in a monocrystalline silicon substrate of said first conductivity, forming isolation structures for defining active areas on the front of the devices, forming a gate oxide layer at least over said active areas, forming a gate over an isolating gate oxide layer within said active areas belonging to n-channel and to p-channel transistors, forming lightly doped drain regions in transistors of both types of conductivity close to the sides of said gate, forming spacers of a dielectric material along the sides of said gate, masking and implanting an n-type dopant for forming heavily doped drain regions in n-channel transistors and masking and implanting a p-type dopant for forming heavily doped drain regions in p-channel transistors, opening and forming contacts and interconnecting lines, characterized by the fact that said lightly doped drain regions are formed by means of a single masking operation in transistors of both channel conductivity types by carrying out, after forming said gate and before forming said spacers, the following steps: a. masking the active areas of transistors with a channel conductivity of one of said first and second conductivities; b. then implanting a dopant of the same conductivity of said channel conductivity and removing said mask; c. and then implanting without utilizing any mask a dopant of opposite conductivity to said channel conductivity and in a dose sufficient to form lightly doped drain regions of the respective conductivity type in said previously masked active areas; and wherein the dose of said dopant implanted in step (b) is sufficient to compensate for the unmasked implantation of the dopant in step (c) in order to form lightly doped drain regions of respective conductivity type in the active areas of transistors with a channel of opposite conductivity.

Claim 6

The process of claim 3 wherein the lightly doped drain regions have an effective concentration of about 10 18 atoms per cubic centimeter.