Patent US4994401A successfully refreshed from Google Patents.
US4994401A
Expired / Lapsed
US
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Method of making a thin film transistor
Assignee: Philips Components Kobe KK
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Filing: 1990-03-26
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Granted: 1991-02-19
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Expires: 2010-03-26
Abstract
Abstract A source electrode and a drain electrode are formed apart on an insulating substrate, and a semiconductor layer is formed on the substrate between the source and drain electrodes. An insulating organic molecular film is formed all over the source and drain electrodes and the semiconductor layer. Ions are implanted into a selected top surface region of the insulating organic molecular film, corresponding to the semiconductor layer, by which chains of molecules in the surface region are cut to form free carbon, providing a conductive gate electrode.
Inventors
- 👤 Yasuhiro Ukai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 22:40
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D64/00; H10D64/60; H10D64/66; H10D64/667; H10D64/68; H10P14/63; H10P14/6326; H10P14/6342; H10P14/6344; Y; Y10; Y10S; Y10S438/00; Y10S438/91; Y10S438/98
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
106 words
A method for the manufacture of a thin film transistor comprising the steps of: forming spaced source and drain electrodes on an insulating substrate; forming a semiconductor layer on the insulating substrate between the source and drain electrodes; forming an insulating organic molecular film all over the source and drain electrodes and the semiconductor layer; and selectively implanting ions into a region of the top surface of the insulating organic molecular film remote from the semiconductor layer, whereby chains of molecules in said surface region of the insulating organic molecular film are cut to form free carbon, providing a conductive gate electrode in said top surface.
Claim 2
Independent Claim
106 words
A method for the manufacture of a thin film transistor comprising the steps of: forming spaced source and drain electrodes on an insulating substrate; forming a semiconductor layer on the insulating substrate between the source and drain electrodes; forming an insulating organic molecular film all over the source and drain electrodes and the semiconductor layer; and selectively implanting ions into a region of the top surface of the insulating organic molecular film remote from the semiconductor layer, whereby chains of molecules in said surface region of the insulating organic molecular film are cut to form free carbon, providing a conductive gate electrode in said top surface.
Claim 3
Dependent Claim
26 words
The manufacturing method of claim 1, wherein the formation of the insulating organic molecular film is performed by a spinner coating, offset printing, or Langmuir-Blodgett process.
Claim 4
Dependent Claim
24 words
The manufacturing method of claim 1, wherein the ion implantation is performed by implanting N + ions at an acceleration energy of 90 KeV.
Claim 5
Dependent Claim
33 words
The manufacturing method of claim 3 wherein the ion implantation is performed selectively for a predetermined region of said top surface of the insulating organic molecular film by control of ion beam scanning.
Claim 6
Dependent Claim
24 words
The manufacturing method of claim 1, wherein the ion implantation is performed by implanting Ar + ions at an acceleration energy of 150 KeV.
Claim 7
Dependent Claim
33 words
The manufacturing method of claim 5 wherein the ion implantation is performed selectively for a predetermined region of said top surface of the insulating organic molecular film by control of ion beam scanning.
Claim 8
Dependent Claim
30 words
The manufacturing method of claim 1 wherein the insulating organic molecular film is formed of a material selected from the group consisting of polyimide, stearic acid, diacetylene, phthalocyanine, and anthracene.
Claim 9
Dependent Claim
32 words
The manufacturing method of claim 1 wherein the ion implantation is performed selectively for a predetermined region of said top surface of the insulating organic molecular film through use of a mask.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-02-18 | 1994-08-20 | 1995-02-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-18 | 1998-08-20 | 1999-02-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-18 | 2002-08-20 | 2003-02-19 | $7700.00 | Window Closed / Lapsed |