← Back to Patent Explorer
US4990988A Expired / Lapsed US ⏱️ 0.0 years remaining

Laterally stacked Schottky diodes for infrared sensor applications

Assignee: National Aeronautics and Space Administration
•
Filing: 1989-06-09
•
Granted: 1991-02-05
•
Expires: 2009-06-09
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Laterally stacked Schottky diodes (25) for infrared sensor applications are fabricated utilizing porous silicon (10) having pores (12). A Schottky metal contact (24) is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.

Inventors

  • 👤 True-Lon Lin

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 01:41
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/122; H10F77/1228; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/157; H10F39/1575

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 51 words
An infrared sensor comprising a plurality of laterally stacked Schottky diodes, each diode comprising a Schottky barrier metal formed in an opening in a silicon substrate, each said opening having a diameter ranging from about 50 to 200 Å and a depth ranging from about 1 to more than 100 μm.
Claim 2
Dependent Claim 51 words
An infrared sensor comprising a plurality of laterally stacked Schottky diodes, each diode comprising a Schottky barrier metal formed in an opening in a silicon substrate, each said opening having a diameter ranging from about 50 to 200 Å and a depth ranging from about 1 to more than 100 μm.
Claim 3
Dependent Claim 25 words
The sensor of claim 1 wherein said Schottky barrier metal comprises a metal selected from the group consisting of platinum, iridium, palladium, cobalt and nickel.
Claim 4
Dependent Claim 20 words
The sensor of claim 1 further including a silicide portion formed between said silicon substrate and said Schottky barrier metal.
Claim 5
Dependent Claim 26 words
The sensor of claim 3 wherein said silicide comprises a member selected from the group consisting of the silicides of platinum, iridium, palladium, cobalt and nickel.
Claim 6
Dependent Claim 16 words
The sensor of claim 1 further including a metal contact formed to said Schottky barrier metal.
Claim 7
Dependent Claim 26 words
The sensor of claim 5 wherein said metal contact comprises a metal selected from the group consisting of platinum, iridium, palladium, cobalt, nickel, aluminum, and gold.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-02-04 1994-08-06 1995-02-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-02-04 1998-08-06 1999-02-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-02-04 2002-08-06 2003-02-05 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag