US4065742A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Composite semiconductor structures
Assignee: Texas Instruments Inc
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Filing: 1975-06-23
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Granted: 1977-12-27
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Expires: 1995-06-23
Abstract
Abstract Disclosed is a method for providing electronic semiconductor devices and the devices produced thereby utilizing an orientation dependent etch to selectively provide grooves in a monocrystalline silicon substrate having a crystal orientation of (110). By selectively etching with an orientation dependent etch to provide deep grooves having substantially parallel sidewalls and thereafter refilling with an appropriate material of the appropriate conductivity, a plurality of semiconductor electronic devices are provided.
Inventors
- 👤 Don Leslie Kendall
- 👤 Millard Monroe Judy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 05:08
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10F; H10F99/00; H10D1/43; H10D99/00; H10H; H10H20/00; H10H20/80; H10P; H10P95/00; H10W; H10W90/00
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
79 words
A temperature compensated resistor of a semiconductor material having a plurality of conductivities comprising in combination: N-rows by M-columns of semiconductor mesas of one conductivity and one conductivity type, wherein N and M are integers; and a second semiconductor material of a second conductivity and said first conductivity type interdisposed between and surrounding said means, wherein said one conductivity material and said second conductivity material having temperature coefficients of resistivity of opposite signs over a desired range of temperatures.
Claim 2
Dependent Claim
79 words
A temperature compensated resistor of a semiconductor material having a plurality of conductivities comprising in combination: N-rows by M-columns of semiconductor mesas of one conductivity and one conductivity type, wherein N and M are integers; and a second semiconductor material of a second conductivity and said first conductivity type interdisposed between and surrounding said means, wherein said one conductivity material and said second conductivity material having temperature coefficients of resistivity of opposite signs over a desired range of temperatures.
Claim 3
Dependent Claim
15 words
The semiconductor resistor of claim 1 wherein said first and second semiconductor materials are silicon.
Claim 4
Dependent Claim
14 words
The resistor of claim 2 wherein said silicon has a crystal orientation of (110).
Claim 5
Dependent Claim
27 words
The semiconductor resistor of claim 1 and further including electrical contacts to opposite sides of said array, each contact electrically contacting said mesas and said interspersed material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-26 | 1981-06-27 | 1981-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-26 | 1985-06-27 | 1985-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-26 | 1989-06-27 | 1989-12-27 | $7700.00 | Window Closed / Lapsed |