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US3711753A Expired / Lapsed US ⏱️ 0.0 years remaining

Enhancement mode n-channel mos structure and method

Assignee: Signetics Corp
•
Filing: 1971-06-04
•
Granted: 1973-01-16
•
Expires: 1991-06-04
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Abstract

Abstract Enhancement mode N-channel MOS structure having a semiconductor body with a region of P conductivity type formed in the body and extending to the surface. A polycrystalline gate structure is formed on said surface. Spaced source and drain regions are formed in the region of P conductivity type and form a channel in said body underlying said gate structure with the polycrystalline material of the gate structure having an N-type impurity therein. A layer of insulating material is formed on the surface and covers the gate structure. Contact elements are formed on the layer of insulating material and extend therethrough to make contact with the source and drain regions and said polycrystalline gate structure to form an active device. In the method for fabricating the structure, the polycrystalline material of the polycrystalline gate structure is doped independently of doping for forming the channel underlying the polycrystalline gate structure.

Inventors

  • 👤 W Brand
  • 👤 F Kashkooli

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 05:29
CPC Classifications
H; H10; H10D; H10D99/00; H10D48/00; H10D48/30; H10D48/32; H10D48/36; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/122

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 42 words
A structure as in claim 1 wherein said semiconductor body is provided with a region surrounding said source and drain regions and having a P-type impurity therein of a greater concentration than the concentration of the P-type impurity in the semiconductor body.
Claim 2
Dependent Claim 21 words
A structure as in claim 2 wherein said source and drain regions contact said region surrounding said source and drain regions.
Claim 3
Dependent Claim 31 words
A structure as in claim 1 wherein said polycrystalline gate structure includes a layer of silicon dioxide disposed on said surface, and a polycrystalline layer disposed on said silicon oxide surface.

References Cited (Backward Citations)

US3470390A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-01-16 1976-07-17 1977-01-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-01-16 1980-07-17 1981-01-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-01-16 1984-07-17 1985-01-16 $7700.00 Window Closed / Lapsed

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