Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
134 words
A Gunn device assembly comprising a layer of actiVe semiconductive material, a first set of electrical contacts including a plurality of electrical contacts contiguous with one side of said active semiconductive layer, and a second set of electrical contacts including a plurality of electrical contacts parallel to said first set of contacts and contiguous with another side of said active semiconductive layer, said second set of electrical contacts overlapping said first set of electrical contacts to form a plurality of Gunn devices in said active semiconductive layer defined by the overlapping areas of said first and said second sets of electrical contacts. ''''wherein the lateral distance between adjacent electrical contacts is greater than the thickness of said active semiconductive layer wherein said plurality of Gunn devices are electrically in series and thermally in parallel.''''
Claim 2
Dependent Claim
134 words
A Gunn device assembly comprising a layer of actiVe semiconductive material, a first set of electrical contacts including a plurality of electrical contacts contiguous with one side of said active semiconductive layer, and a second set of electrical contacts including a plurality of electrical contacts parallel to said first set of contacts and contiguous with another side of said active semiconductive layer, said second set of electrical contacts overlapping said first set of electrical contacts to form a plurality of Gunn devices in said active semiconductive layer defined by the overlapping areas of said first and said second sets of electrical contacts. ''''wherein the lateral distance between adjacent electrical contacts is greater than the thickness of said active semiconductive layer wherein said plurality of Gunn devices are electrically in series and thermally in parallel.''''
Claim 3
Dependent Claim
19 words
A Gunn device assembly according to claim 1 wherein said Gunn device assembly is mounted on a heat sink.
Claim 4
Dependent Claim
51 words
A Gunn device assembly according to claim 1 wherein each electrical contact of said first set of electrical contacts overlaps adjacent electrical contacts of second set of electrical contacts and each electrical contact of said second set of electrical contacts overlaps adjacent electrical contacts of said first set of electrical contacts.
Claim 5
Dependent Claim
72 words
A Gunn device assembly according to claim 1 wherein each electrical contact of said first set of electrical contacts overlaps two adjacent electrical contacts of said second set of electrical contacts to form a single pair of Gunn devices in the portions of said active semiconductive layer defined by extending between the overlapping areas of said electrical contacts, and means for providing a current path between adjacent pairs of said Gunn devices.
Claim 6
Dependent Claim
40 words
A Gunn device assembly according to claim 4 further comprising means for providing an ac current path between individual Gunn devices forming a single pair of Gunn devices and for maintaining the phase of said individual Gunn devices substantially identical.
Claim 7
Dependent Claim
25 words
A Gunn device assembly according to claim 5 wherein said ac current path means maintains the phase of said plurality of Gunn devices substantially identical.
Claim 8
Dependent Claim
51 words
A Gunn device assembly according to claim 6 wherein said means for providing a current path between adjacent pairs of said Gunn devices and said means for providing an ac current path are of lengths substantially equal to lambda /2 wherein lambda is the wavelength of said plurality of Gunn devices.
Claim 9
Dependent Claim
26 words
A Gunn device assembly according to claim 7 wherein said a.c. path comprises a microstrip transmission line, said line having gaps to block d.c. current flow.