Grooved Schottky barrier photodiode for infrared sensing

Claim 2

A plurality of electromagnetic radiation sensitive semiconductor structures on a substrate having a first surface region, each of said structures comprising: a plurality of corrugations extending into the substrate from the first surface region, said corrugations having corrugation surfaces with a crystal orientation of <111>; and an electrically conductive radiation sensitive coating disposed over the plurality of corrugations, said radiation sensitive layer exciting carriers upon exposure to radiation such that at least a portion of said carriers are injected into said substrate.

Claim 3

A structure as in claim 1 wherein the coating comprises a metal silicide.

Claim 4

A structure as in claim 2 wherein the metal silicide comprises platinum silicide.

Claim 5

A structure as in claim 2 wherein the metal silicide comprises iridium silicide.

Claim 6

A structure as in claim 2 wherein the silicide comprises palladium silicide.

Claim 7

A structure as in claim 3 wherein the semiconductor substrate comprises monocrystalline silicon.

Claim 8

A structure as in claim 6 wherein the first surface of the semiconductor substrate is of the (100) crystallographic orientation.

Claim 9

A structure as in claim 1 further comprising a dielectric layer disposed over the coating.

Claim 10

A structure as in claim 8 further comprising a mirror disposed over the dielectric layer.

Claim 11

A sructure as in claim 9 wherein the mirror comprises aluminum and the substrate comprises P conductivity type.

Claim 12

A structure as in claim 1 further comprising a guard ring of a conductivity type opposite said substrate disposed in the substrate to surround the plurality of corrugations.

Claim 13

A structure as in claim 1 wherein the electromagnetic radiation comprises infrared radiation.

Claim 14

An infrared sensitive Schottky barrier photodiode structure comprising: a (100) monocrystalline silicon substrate having an upper surface and an active Schottky barrier photodiode region at the upper surface; a plurality of corrugation extending downward from the surface of the substrate in the active Schottky barrier photodiode region, each corrugation exposing a (111) crystal face of the substrate; a layer of platinum silicide disposed over the surface of the corrugations; and a dielectric layer disposed over the platinum silicide.

Claim 15

An infrared sensitive Schottky barrier photodiode structure comprising: a (100) monocrystalline silicon substrate having an upper surface and an active Schottky barrier photodiode region at the upper surface; a plurality of corrugation extending downward from the surface of the substrate in the active Schottky barrier photodiode region, each corrugation exposing a (111) crystal face of the substrate; a layer of platinum silicide disposed over the surface of the corrugations; and a dielectric layer disposed over the platinum silicide.

Claim 16

The structure as recited in claim 2, wherein the metal silicide comprises a metal selected from the group platinum silicide, iridium silicide, palladium silicide, and mixtures thereof.

Claim 17

A plurality of electromagnetic radiation sensitive semiconductor structures on a substrate having a first surface region, each of said structures comprising: a plurality of corrugations extending into the substrate from the first surface region, said corrugations having corrugation surfaces oriented near 45° with respect to said surface; and an electrically conductive radiation sensitive coating disposed over the plurality of corrugations, said radiation sensitive layer exciting holes or electrons upon exposure to radiation such that at least a portion of said holes or electrons are injected into said substrate.

Claim 18

A plurality of electromagnetic radiation sensitive semiconductor structures on a substrate having a first surface region, each of said structures comprising: a plurality of corrugations extending into the substrate from the first surface region, said corrugations having corrugation surfaces oriented near 45° with respect to said surface; and an electrically conductive radiation sensitive coating disposed over the plurality of corrugations, said radiation sensitive layer exciting holes or electrons upon exposure to radiation such that at least a portion of said holes or electrons are injected into said substrate.