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US4234887A Expired / Lapsed US ⏱️ 0.0 years remaining

V-Groove charge-coupled device

Assignee: International Business Machines Corp
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Filing: 1979-05-24
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Granted: 1980-11-18
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Expires: 1999-05-24
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Abstract

Abstract A charge-coupled device shift register is formed in V-grooves provided by anisotropically etching in a substrate. insulated conductive electrodes are provided perpendicular to the V-grooves to form a plurality of parallel shift registers which transfer charges along the length of the V-grooves.

Inventors

  • 👤 Wilbur B. Vanderslice, Jr.

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 16:39
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/472; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/335

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 111 words
A charge transfer device comprising: a semiconductor substrate having at least one longitudinal recess having a length substantially greater than its width formed in a surface thereof; a plurality of longitudinal charge transfer electrodes positioned over and substantially perpendicular to said recess for effecting charge transfer of carriers from under an electrode to under an adjacent electrode within and along the length of said recess in response to signals applied to said electrodes; and isolation means between said charge transfer electrodes and the portions of said surface of said substrate adjacent to said recess for preventing charge transfer from occurring in said portions of said surface in response to said signals.
Claim 2
Dependent Claim 111 words
A charge transfer device comprising: a semiconductor substrate having at least one longitudinal recess having a length substantially greater than its width formed in a surface thereof; a plurality of longitudinal charge transfer electrodes positioned over and substantially perpendicular to said recess for effecting charge transfer of carriers from under an electrode to under an adjacent electrode within and along the length of said recess in response to signals applied to said electrodes; and isolation means between said charge transfer electrodes and the portions of said surface of said substrate adjacent to said recess for preventing charge transfer from occurring in said portions of said surface in response to said signals.
Claim 3
Dependent Claim 47 words
The charge transfer device of claim 1 wherein said plurality of charge transfer electrodes comprise first and second groups of electrodes in which each of one of said second groups of electrodes at least partially overlaps at least one adjacent electrode of said first group of electrodes.
Claim 4
Dependent Claim 20 words
The charge transfer device of claim 2 wherein at least said first group of electrodes comprises a self-passivating conductive material.
Claim 5
Dependent Claim 14 words
The charge transfer device of claim 3 wherein said self-passivating conductive material comprises polysilicon.
Claim 6
Dependent Claim 14 words
The charge transfer device of claim 1 wherein said recess has a V-shaped cross-section.
Claim 7
Dependent Claim 27 words
The charge transfer device of claim 1 wherein said semiconductor substrate is monocrystalline silicon and said recess is formed by anisotropically defined crystallographic planes in said substrate.
Claim 8
Dependent Claim 39 words
The charge transfer device of claim 4 wherein said surface of said monocrystalline silicon substrate is oriented parallel to a 100 plane of said substrate and said recess is at least partially defined by 111 planes in said substrate.

References Cited (Backward Citations)

US4070690A Cited
US4126881A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1983-11-18 1984-05-19 1984-11-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1987-11-18 1988-05-19 1988-11-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1991-11-18 1992-05-19 1992-11-18 $7700.00 Window Closed / Lapsed

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