Semiconductor device

Abstract

Abstract PURPOSE:To obtain a diode with a high reverse breakdown voltage by a method wherein a mesa is formed on a part of the surface of a semiconductor substrate, the surface, except for the summit part, is covered with an insulating protective film, and a Schottky barrier metal is fitted on the entire, exposed mesa summit part. CONSTITUTION:An Si layer 6 is epitaxially grown on Si substrate 9, and the part in which a Schottky barrier is to be formed is covered with Si3N4 film. Next, by using this Si3N4 film as a mask, layer 6 is etched to a specified depth, and a mesa structure consisting of layer 6 is produced below the Si3N4 film only. Subsequently, SiO2 film 7 is fitted on layer 6, which has become thin, and the Si3N4 film is removed; and Schottky barrier metal 8 is evaporated on the entire mesa summit part. In this way, layer 6 surrounding the barrier is removed to a depth corresponding to the depth of the pn-junction, and thereby the part that would give adverse effect on the high frequency characteristics is eliminated. As a result, a Schottky barrier diode with a high reverse breadkown voltage can be obtained.

Inventors

• 👤 Yoichi Kuriyama
• 👤 Toshiyuki Shikanaka

Bibliographic Details