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US4984034A Expired / Lapsed US ⏱️ 0.0 years remaining

Non-single-crystalline light emitting semiconductor device matrix with insulation

Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1988-12-05
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Granted: 1991-01-08
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Expires: 2008-12-05
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Abstract

Abstract A light emitting semiconductor device which is provided with a first non-single-crystal semiconductor layer, a second non-single-crystal semiconductor layer formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed on the second semiconductor layer, or a first non-single-crystal semiconductor layer, many second non-single-crystal semiconductor layers formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed on the first semiconductor layer to cover the second semiconductor layers. The first and second semiconductor layers have either one and the other of p and n conductivity types, respectively. Semiconductors of the first, second and third layers are each doped with a dangling bond and recombination center neutralizer. The semiconductor of the second layer has a smaller energy gap than the semiconductors of the first and third layers.

Inventors

  • 👤 Shunpei Yamazaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 23:22
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/84; H10H20/81; H10H20/811; H10H20/813; H10H20/817; H10H20/818; H10H29/00; H10H29/10; H10H29/14; H10H29/142

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 87 words
A light emitting semiconductor device comprising: a transparent glass substrate; a plurality of light emitting elements consisting of non-single-crystalline semiconductor which are in the form of a matrix; an insulator disposed between and in direct contact with the side surfaces of said light emitting elements and with which the spaces between said elements are completely filled; and a plurality of column electrode lines and a plurality of row electrode lines for addressing particular elements and causing light emission from said particular elements through said transparent glass substrate.
Claim 2
Dependent Claim 87 words
A light emitting semiconductor device comprising: a transparent glass substrate; a plurality of light emitting elements consisting of non-single-crystalline semiconductor which are in the form of a matrix; an insulator disposed between and in direct contact with the side surfaces of said light emitting elements and with which the spaces between said elements are completely filled; and a plurality of column electrode lines and a plurality of row electrode lines for addressing particular elements and causing light emission from said particular elements through said transparent glass substrate.
Claim 3
Dependent Claim 34 words
The device of claim 1 wherein side and upper surfaces of said light emitting elements are embedded in said insulator which extends on the said side and upper surfaces of said light emitting elements.
Claim 4
Dependent Claim 25 words
The device of claim 1 wherein upper and lower surfaces of said insulator are flat, said column or row lines extending over said flat surfaces.
Claim 5
Dependent Claim 13 words
The device of claim 1 where said insulator is an organic resin layer.
Claim 6
Dependent Claim 72 words
A light emitting semiconductor device of claim 1, wherein the light emitting elements comprise a first non-single crystalline semiconductor layer of a first conductivity type, a second non-single crystalline semiconductor layer formed on the first non-single crystalline semiconductor layer, and a third non-single crystalline semiconductor layer of a second conductivity type opposite to the first conductivity type, said third non-single crystalline semiconductor layer being formed on the second non-single crystalline semiconductor layer.
Claim 7
Dependent Claim 30 words
A light emitting semiconductor device of claim 5, wherein the second non-single crystalline semiconductor layer has a smaller energy band gap than the first and third non-single crystalline semiconductor layers.
Claim 8
Dependent Claim 45 words
A light emitting semiconductor device of claim 5, wherein a band gap of the second non-single crystalline semiconductor layer is equal to a band gap of the first non-single crystalline semiconductor layer and smaller than a bank gap of the third non-single crystalline semiconductor layer.
Claim 9
Dependent Claim 45 words
A light emitting semiconductor device of claim 5, wherein a band gap of the second non-single crystalline semiconductor layer is equal to a band gap of the third non-single crystalline semiconductor layer and smaller than a band gap of the first non-single crystalline semiconductor layer.
Claim 10
Dependent Claim 92 words
A light emitting semiconductor device of claim 1, wherein the light emitting elements comprise a first non-single crystalline semiconductor layer of a first conductivity type, a second and third non-single crystalline semiconductor layer formed on the first non-single crystalline semiconductor layer, and a fourth non-single crystalline semiconductor layer of a second conductivity type opposite to the first conductivity type that is formed on the third non-single crystalline semiconductor layer, wherein the second and third non-single crystalline semiconductor layers have smaller band gaps than the first and fourth non-single crystalline semiconductor semiconductor layers.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-01-07 1994-07-09 1995-01-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-01-07 1998-07-09 1999-01-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-01-07 2002-07-09 2003-01-08 $7700.00 Window Closed / Lapsed

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