Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
87 words
A light emitting semiconductor device comprising: a transparent glass substrate; a plurality of light emitting elements consisting of non-single-crystalline semiconductor which are in the form of a matrix; an insulator disposed between and in direct contact with the side surfaces of said light emitting elements and with which the spaces between said elements are completely filled; and a plurality of column electrode lines and a plurality of row electrode lines for addressing particular elements and causing light emission from said particular elements through said transparent glass substrate.
Claim 2
Dependent Claim
87 words
A light emitting semiconductor device comprising: a transparent glass substrate; a plurality of light emitting elements consisting of non-single-crystalline semiconductor which are in the form of a matrix; an insulator disposed between and in direct contact with the side surfaces of said light emitting elements and with which the spaces between said elements are completely filled; and a plurality of column electrode lines and a plurality of row electrode lines for addressing particular elements and causing light emission from said particular elements through said transparent glass substrate.
Claim 3
Dependent Claim
34 words
The device of claim 1 wherein side and upper surfaces of said light emitting elements are embedded in said insulator which extends on the said side and upper surfaces of said light emitting elements.
Claim 4
Dependent Claim
25 words
The device of claim 1 wherein upper and lower surfaces of said insulator are flat, said column or row lines extending over said flat surfaces.
Claim 5
Dependent Claim
13 words
The device of claim 1 where said insulator is an organic resin layer.
Claim 6
Dependent Claim
72 words
A light emitting semiconductor device of claim 1, wherein the light emitting elements comprise a first non-single crystalline semiconductor layer of a first conductivity type, a second non-single crystalline semiconductor layer formed on the first non-single crystalline semiconductor layer, and a third non-single crystalline semiconductor layer of a second conductivity type opposite to the first conductivity type, said third non-single crystalline semiconductor layer being formed on the second non-single crystalline semiconductor layer.
Claim 7
Dependent Claim
30 words
A light emitting semiconductor device of claim 5, wherein the second non-single crystalline semiconductor layer has a smaller energy band gap than the first and third non-single crystalline semiconductor layers.
Claim 8
Dependent Claim
45 words
A light emitting semiconductor device of claim 5, wherein a band gap of the second non-single crystalline semiconductor layer is equal to a band gap of the first non-single crystalline semiconductor layer and smaller than a bank gap of the third non-single crystalline semiconductor layer.
Claim 9
Dependent Claim
45 words
A light emitting semiconductor device of claim 5, wherein a band gap of the second non-single crystalline semiconductor layer is equal to a band gap of the third non-single crystalline semiconductor layer and smaller than a band gap of the first non-single crystalline semiconductor layer.
Claim 10
Dependent Claim
92 words
A light emitting semiconductor device of claim 1, wherein the light emitting elements comprise a first non-single crystalline semiconductor layer of a first conductivity type, a second and third non-single crystalline semiconductor layer formed on the first non-single crystalline semiconductor layer, and a fourth non-single crystalline semiconductor layer of a second conductivity type opposite to the first conductivity type that is formed on the third non-single crystalline semiconductor layer, wherein the second and third non-single crystalline semiconductor layers have smaller band gaps than the first and fourth non-single crystalline semiconductor semiconductor layers.